Metal oxide thin films are critical components in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal–insulator–semiconductor (MIS) field-effect transistors. Although thin-film materials are typically produced via vacuum-based methods, solution deposition offers a scalable and cost-efficient alternative. We report an all-inorganic aqueous solution route to amorphous lanthanum zirconium oxide (La2Zr2O7, LZO) dielectric thin films. LZO films were spin-cast from aqueous solutions of metal nitrates and annealed at temperatures between 300 and 600 °C to produce dense, defect-free, and smooth films with subnanometer roughness. Dielectric constants of 12.2–16.4 and loss tangents <0.6% were obtained for MIS devices utilizing LZO as the dielectric layer (1 kHz). Leakage currents <10–7 A cm–2 at 4 MV cm–1 were measured for samples annealed at 600 °C. The excellent surface morphology, high dielectric constants, and low leakage current densities ma...

High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

This Perspective article highlights some of the traditional and non-traditional analytical tools that are presently used to characterize aqueous inorganic nanoscale clusters and polyoxometalate ions. The techniques discussed in this article include nuclear magnetic resonance spectroscopy (NMR), small angle X-ray scattering (SAXS), dynamic and phase analysis light scattering (DLS and PALS), Raman spectroscopy, and quantum mechanical computations (QMC). For each method we briefly describe how it functions and illustrate how these techniques are used to study cluster species in the solid state and in solution through several representative case studies. In addition to highlighting the utility of these techniques, we also discuss limitations of each approach and measures that can be applied to circumvent such limits as it pertains to aqueous inorganic cluster characterization.

/pdf/an-overview-of-selected-current-approaches-to-the-npkb9hzbqe.pdf

An overview of selected current approaches to the characterization of aqueous inorganic clusters

Photolithographic-defined films play an important role in modern optoelectronics and are crucial for the development of advanced organic thin-film transistors (OTFTs). Here, we explore a facile pho...

Cinnamate-Functionalized Natural Carbohydrates as Photopatternable Gate Dielectrics for Organic Transistors

A variety of metal oxide films (InGaOx, AlOx, “HafSOx”) prepared from aqueous solutions were found to have non-uniform electron density profiles using X-ray reflectivity. The inhomogeneity in HafSOx films (Hf(OH)4–2x−2y(O2)x(SO4)y·zH2O), which are currently under investigation as inorganic resists, were studied in more detail by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and medium-energy ion scattering (MEIS). The HAADF-STEM images show a greater concentration of heavy atoms near the surface of a single-layer film. MEIS data confirm the aggregation of Hf at the film surface. The denser “crust” layer in HafSOx films may directly impact patterning resolution. More generally, the phenomenon of surface-layer inhomogeneity in solution-deposited films likely influences film properties and may have consequences in other thin-film systems under investigation as resists, dielectrics, and thin-film transistor components.

Non-uniform Composition Profiles in Inorganic Thin Films from Aqueous Solutions

Recent progress in multiferroic materials and spintronic devices has renewed interest in metal oxide ferromagnetic and ferrimagnetic materials. Here, we report the preparation of thin films of nanocrystalline ferrimagnetic CoFe2O4 (CFO) using an environmentally benign aqueous solution processing route. The evolution of the structural, optical, and magnetic properties as a function of postdeposition annealing temperature is reported. For the highest annealing temperature (800 °C), the remanence, coercivity, and resistivity values are comparable with those of films fabricated by epitaxial growth methods and exceed the quality of CFO nanocrystals prepared by other wet-chemical syntheses. In addition to the ability to make high quality ferrite films, the aqueous solution processing strategy offers great flexibility for tuning film properties by incorporating or substituting additional transition metal ions.

High Quality Magnetic Oxide Thin Films Prepared via Aqueous Solution Processing

Tunable dielectric thin films by aqueous, inorganic solution-based processing

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Tunable dielectric thin films by aqueous, inorganic solution-based processing