In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band‐gap semiconductors the most promising ...

Semiconductor ultraviolet detectors

A Three Dimensional Structure (3DS) Memory (100) allows for physical separation of the memory circuits (103) and the control logic circuit (101) onto different layers (103) such that each layer may be separately optimized. One control logic circuit (101) suffices for several memory circuits (103), reducing cost. Fabrication of 3DS memory (100) involves thinning of the memory circuit (103) to less than 50 microns in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections (105) are used. The 3DS memory (100) manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

Three dimensional structure memory

A method and apparatus are disclosed for identifying molecular structures within a sample substance using a monolithic array of test sites formed on a substrate upon which the sample substance is applied. Each test site includes probes formed therein to bond with a predetermined target molecular structure or structures. A signal is applied to the test sites and certain electrical, mechanical and/or optical properties of the test sites are detected to determine which probes have bonded to an associated target molecular structure.

Optical and electrical methods and apparatus for molecule detection

Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 /spl Omega//spl middot/cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic contact on the wafer back side consisting of a thin in situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for a good short-wavelength response, while the relatively large depleted thickness results in a good near-infrared response.

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Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

The method of manufacturing a semiconductor device of the present invention includes steps of; a resin layer forming process in which a face with electrodes of a semiconductor wafer having a plurality of semiconductor elements formed thereon is coated with a resin layer which has a function of sealing it; and a wafer thinning process in which the back face of the semiconductor wafer is ground. The method of manufacturing the semiconductor device of the present invention further includes a process of forming a conductive section on the electrodes of the semiconductor wafer with a plurality of semiconductor elements in such a manner the conductive section reaches to the electrodes. The manufacturing method of the semiconductor device of the present invention still further includes a process of cutting the semiconductor wafer having a plurality of semiconductor elements along boundaries of each semiconductor element. In the thinning process, at least one of a mechanical grinding method, a chemical etching method and a plasma etching method are employed.

Semiconductor device and method of manufacturing the same

The performance requirements for scientific-quality CCDs are discussed, focusing on the design of two devices, and the progress toward achieving the desired performance is discussed. These devices are intended for rear-illuminated applications and have 512 x 512 and 2048 x 2048 pixel formats. The thinned 10 to 20 micron thick Si membrane is fully supported by a unique glass ceramic substrate. Quantum efficiencies of greater than 70 percent at 700 nm and greater than 40 percent at wavelengths less than 400 nm have been measured on a test device. Dark currents as low as 6 pA/sq cm also have been measured recently.

Large format, high resolution image sensors

The designs of the 512 x 512 pixel and 2048 x 2048 pixel CCD sensors developed for scientific imaging are described. Both sensors are manufactured using the three phase, three level polysilicon gate technology, and the architecture of the chips is series-parallel-series. The components of the two different on-chip amplifiers are examined. The sensors are thinned and operated in the back side illumination mode to ensure the highest quantum efficiency. The performances of a number of front side illuminated devices and two thinned rear illuminated chips are evaluated. It is observed that the sensors equal or exceed their proposed charge transfer efficiency of 0.99999, the noise level of 2 e- and 20 e- at 50 kp/s, the quantum efficiency of 40 percent at 400 microns and 70 percent at 700 microns, and of the well capacity of greater than 500 ke-/pixel.

Large area CCD image sensors for scientific applications

A plate-like body (e.g., a silicon wafer) at least about 0.5 mm thick that is to be thinned is reinforced by applying to one main surface, in adhesive relationship thereto, a coating of a finely divided material which is fused to form a hard mechanically supportive coating. The body is thinned from the second main surface to a thickness less than about 250 μm. For a silicon body, the mechanically supportive coating comprises at least about 18% silicon.

Method of thinning a silicon wafer using a reinforcing material

An integrated circuit formed in a semiconductor die which has at least two distinct functional regions is treated by mounting the die by way of its front face on a support member, and subsequently removing die material by way of its back face so as to physically separate the functional regions of the die from each other

Method of treating an integrated circuit

An integrated circuit is formed in a semiconductor die having a front face and a back face, the die having at least first and second functional regions. The first functional region comprises at least one zone of p-type material and at least one zone of n-type material that meets the zone of p-type material in a p-n junction. The integrated circuit comprises connection pads connected respectively to the zone of p-type material and the zone of n-type material, whereby those zones can be connected to an external circuit. At least one of the connection pads is electrically isolated from the second functional region of the integrated circuit. The integrated circuit is treated by mounting the die on a support member and removing material of the die so as to separate the functional regions of the die from each other.

Method of treating an integrated circuit to provide a temperature sensor that is integral therewith

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