This article introduces a millimeter-wave (mm-wave) multi-band transmit (Tx) phased-array design supp- orting the fifth-generation (5G) new radio frequency range 2 (NR FR2) bands. An eight-element phased-array module is presented employing two wideband 16–52 GHz <inline-formula> <tex-math notation="LaTeX">$4{\times }1$ </tex-math></inline-formula> Tx beamformer chips and tapered slot Vivaldi antenna array. The beamformer chips are designed in a SiGe BiCMOS process and flipped on a printed circuit board (PCB). The SiGe integrated circuit (IC) has four differential radio frequency (RF) beamforming channels each consisting of an active balun, analog adder-based phase shifter (PS), variable gain amplifier (VGA), and a two-stage class-AB power amplifier (PA). The RF input signal is distributed to the four channels using a compact Wilkinson network. The measured peak gain is 28.3 dB with 13.5–14.7 dBm output <inline-formula> <tex-math notation="LaTeX">$P_{1{\mathrm {dB}}}$ </tex-math></inline-formula> and 14–15.4 dBm <inline-formula> <tex-math notation="LaTeX">$P_{{\mathrm {sat}}}$ </tex-math></inline-formula> at 20–50 GHz. Each channel dissipates 250 mW from 2 V and 3-V supplies at <inline-formula> <tex-math notation="LaTeX">$P_{1\,{\mathrm{ dB}}}$ </tex-math></inline-formula>. The beamformer chip is tested using 64-QAM waveforms and achieves a data rate of 2.4 Gb/s at 5.2% rms EVM and 9.6-dBm average power. The eight-element phased-array module shows a broadband performance with excellent patterns and ±60° scanning capability and with a peak effective isotropic radiated power (EIRP) of 32–34 dBm at 19.5–51 GHz. At an EIRP of 21–22 dBm, 400-MHz 256-QAM 5G-NR compliant waveforms are transmitted with < 2.98% EVM demonstrating 5G NR FR2 operation. To the author’s knowledge, this work achieves the highest bandwidth phased array with a peak EIRP of 34 dBm enabling the construction of multi-standard/multi-band 5G phased-array systems.

A Multi-Band 16–52-GHz Transmit Phased Array Employing 4 × 1 Beamforming IC With 14–15.4-dBm Psat for 5G NR FR2 Operation

This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and amplitude-to-amplitude (AM–AM) distortions on error vector magnitude (EVM) are detailed. A three-stage highly linear wideband class-AB power amplifier (PA) is described, mitigating AM–PM and AM–AM distortions without degrading other performances. A matching network embedded transmitting/receiving (T/R) switch is proposed to support time division duplex (TDD). With the proposed technique, RF switch insertion losses are reduced in both transmitter (TX) and receiving (RX) modes. In each TRX element, phase and gain controls are achieved by a 6-bit vector-modulated phase shifter (VMPS) with a phase tuning range of 360° and a 6-bit attenuator with a gain tuning range of 31.5 dB, respectively. Fabricated in 65-nm bulk CMOS, the proposed packaged TRX demonstrates the measured peak gains of 25.5/14.2 dB with the gain ripples of less than 2.5/1.9 dB across 24–29.5 GHz in the TX/RX mode. The measured peak <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\text {1 dB}}$ </tex-math></inline-formula> is 17.6 dBm with a power added efficiency (PAE) of 20.4%. The measured minimum noise figure (NF) is 4.3 dB. The TRX achieves an output power of 7.9–8.9 dBm and an EVM of −25 dB with 8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 100-MHz 5G NR frequency range 2 (FR2) orthogonal frequency division multiplexing (OFDM) 64-quadrature amplitude modulation (QAM) signals across 24–29.5 GHz, covering 3rd generation partnership project (3GPP) 5G NR FR2 operating bands (i.e., n257, n258, and n261) around 26 GHz. 

A 24–29.5-GHz Highly Linear Phased-Array Transceiver Front-End in 65-nm CMOS Supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G New Radio

This work presents a 15–57 GHz multiband/ multistandard phased-array architecture for the fifth-generation (5G) new radio (NR) frequency range 2 (FR2) bands. An eight-element phased-array receive module is demonstrated based on two four-channel wideband beamformer chips designed in the SiGe BiCMOS process and flipped on a low-cost printed circuit board. The SiGe Rx chip employs RF beamforming and is designed to interface to a wideband differential Vivaldi antenna array. Each channel consists of a low-noise amplifier (LNA), active phase shifter with 5-bit resolution, variable gain amplifier (VGA), and differential-to-single-ended stage. The four channels are combined using a wideband two-stage on-chip Wilkinson network. The beamformer has a peak electronic gain of 24–25 dB and a 4.7–6.2 dB noise figure (NF) with a −29 to −24 dBm input $P_{\boldsymbol {1\,dB}}$ at 20–40 GHz. The eight-element phased-array module also achieved ultra-wideband frequency response with flat gain and low-system NF. The phased array scans ±55° with $ < -12$ -dB sidelobes demonstrating multiband operation. A 1.2-m over-the-air (OTA) link measurement using the eight-element Rx module supports 400-MHz 256-QAM OFDMA modulation with < 2.76% error vector magnitude (EVM) at multiple 5G NR FR2 bands. To the author’s knowledge, this work achieves the widest bandwidth phased array enabling the construction of multistandard systems.

A Multiband/Multistandard 15–57 GHz Receive Phased-Array Module Based on 4 × 1 Beamformer IC and Supporting 5G NR FR2 Operation

We present a broadband parallel-combined compact Doherty power amplifier (PA) in a 28-nm bulk complementary metal–oxide–semiconductor (CMOS) device technology for fifth-generation (5G) millimeter-wave (mm-Wave) frequency band (n257, n258, and n261) applications. The proposed Doherty PA has a single transformer (TF)-based output matching network and an equivalent quarter-wavelength line placed between the carrier and peaking amplifiers, absorbing transistors’ output parasitic capacitances. Therefore, the Doherty PA occupies a very small die area and has a wide bandwidth characteristic compared with the conventional Doherty PA output matching network topologies (e.g., parallel- and series-combined Doherty PA output matching networks). The two-stage differential Doherty PA is implemented, which shows a saturation output power (<inline-formula> <tex-math notation="LaTeX">$P_{\mathrm {OUT}}$ </tex-math></inline-formula>) of >18.8 dBm and a peak power-added efficiency (PAE) of >30% at 27 GHz. It also exhibits a linear <inline-formula> <tex-math notation="LaTeX">$P_{\mathrm {OUT}}$ </tex-math></inline-formula> of 12.4 dBm and an average PAE of 20.2% for 100 MHz 5G NR signal (<inline-formula> <tex-math notation="LaTeX">$P_{\mathrm {OUT}}$ </tex-math></inline-formula> of 11.4 dBm and PAE of 18.1% for 8 <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 100 MHz carriers) at the EVM of −25 dB. Over the frequency range of 24.5–29.5 GHz, the PA achieves a linear <inline-formula> <tex-math notation="LaTeX">$P_{\mathrm {OUT}}$ </tex-math></inline-formula> of >11.2 dBm and a PAE of >14.5% (drain efficiency >20.8%). This PA occupies 640 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}\,\,\times $ </tex-math></inline-formula> 250 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> (core only) and is successfully integrated into a 32-channel RF phased-array transceiver IC for the first time. The IC die area is 10.2 mm <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 6.4 mm and consumes about 120 mW per channel at <inline-formula> <tex-math notation="LaTeX">$P_{\mathrm {OUT}}$ </tex-math></inline-formula> of 10.0 dBm.

Single Transformer-Based Compact Doherty Power Amplifiers for 5G RF Phased-Array ICs

We present a 24–30-GHz 256-element dual-polarization transceiver (TRX) phased array based on a 16-element beamformer integrated circuit (BF-IC), 2-element frequency conversion integrated circuit (FC-IC), liquid crystal polymer (LCP)-based combiners and filters, and a tileable package with 64 embedded dual-polarized (dual-pol) antennas. The phased array presented in this work overcomes three key challenges in current 5G millimeter-wave (mmWave) antenna arrays: 1) it supports a dramatic increase in the number of supported fast-access beams; 2) it offers improved power efficiency; and 3) it provides a path to lower solution cost. 1) We enable fast switching among >30000 beams—orders of magnitude improvement over prior work—by employing an on-chip beam calculator in the BF-IC, achieving 200-ns beam setup and 8-ns over-the-air (OTA)-switching time. 2) We enable a module-level transmitter (TX) mode peak power added efficiency (PAE) of 20% using a modular architecture that preserves power amplifier (PA) linearity and efficiency as well as receiver (RX) mode low noise amplifier (LNA) noise figure (NF). The module achieves Psat effective isotropically radiated power (EIRP) of 68.5 dBm and BF-IC NF < 3.9 dB. 3) We lower the solution cost by enabling a wider steering range to reduce the number of phased arrays required in a sectorized coverage scheme, by reducing the IC and package area, and by avoiding calibration. The wider steering range is enabled by using an in-package magnetoelectric dipole antenna (for the first time in silicon-based phased arrays), resulting in steering over ±70° in H- and V-pol in both E- and H-planes without requiring any calibration. Moreover, the module achieves >20-dB cross-polarization isolation across the entire ±70° beam steering range. 

A 24–30-GHz 256-Element Dual-Polarized 5G Phased Array Using Fast On-Chip Beam Calculators and Magnetoelectric Dipole Antennas

There are many challenges in building millimeter-Wave (mmW) 5G radios [1] –[3]. Some of the key challenges are the cost, heat dissipation, and array calibration. This paper describes ADI’s full line-up of mmW 5G radios used today, with a focus on the millimeter wave front-end portion, and how it addresses some of these challenges. The radio block diagram, shown in Fig. 2.1.1, is an example of a dual-polarized 24-to-30GHz band mmW radio. All ICs in this radio cover 24 to 30GHz, allowing the same chips to be used in n257, n258, and n261 radios, which reduces the development cost. The radio consists of two domains: BB-IF and mmW. The BB-IF domain contains either an IF transceiver utilizing quadrature baseband data converters and mixers to generate the IF, or data converters (MxFE) to directly synthesize the IF. The former is optimal for narrower bandwidth applications while the latter consumes more power but can support higher bandwidths. The mmW domain consists of a mmW Up/Down converter and a 16-channel, (2 polarizations $\times 8$ channels per pol) high-performance beamformer (BF). The mmW chips utilize a 45nm RF SOI process, which is optimized for RF performance at the mmW 5G bands. The SOI process is a 12-inch process, hence economically suitable for large-volume applications. The BF linear output power is 12dBm/channel @ 3% EVM using a 400MHz 5G NR waveform. The channel P1dB is 20dBm. Two mmW BFs, cover 24-to-30 and 37-to-44GHz bands, respectively. An implementation of the mmW front-end, consisting of 128 dual-polarized antenna elements, 16 BFs, 4 Up/Down frequency converters (UDCs), and the power-management circuitry has been fabricated and is shown in Fig. 2.1.2. Over-the-air (OTA) measurement results of the fabricated array are presented below. The measurements include the radiation pattern, EIRP, linearity, and combined throughput of four streams. The paper also discusses the following: OTA Performance of ADI’s mmW 5G radios, antenna performance and design aspects, thermal aspects and heat dissipation modelling, and calibration of mmW radios.

2.1 mm-Wave 5G Radios: Baseband to Waves

An optical device package is disclosed The optical device package includes a substrate that passes light at an optical wavelength The optical device package also includes an optical device assembly that is mounted to the substrate The optical device assembly comprises an optical device die The optical device die has a first surface that is mounted to and facing the substrate and a second surface that is opposite the first surface The optical device package further includes a molding compound that is disposed at least partially over the second surface of the integrated device die

Optical sensor package

An optical illuminator assembly such as an integrated module can provide an illumination source for use in applications such as optical detection. A peak output power of the module can be enhanced as compared to other approaches, such as by one or more of controlling parasitic effects along an electrical pathway used to drive an optical emitter circuit included as a portion of the module, or by providing thermal management including establishing thermal conduction pathways through opposite surfaces of an optical emitter circuit such as an integrated circuit die comprising a solid-state optical emitter. Control schemes can be used that power various cells or functional blocks of the optical emitter independently. Thermal regulation can be provided by an active heat transfer element such as a thermoelectric cooler (TEC). An optical illuminator assembly can be optically coupled to a beam-steering device or other elements, such as using a self-aligning mechanical configuration.

Optical illuminator module and related techniques

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2.1 mm-Wave 5G Radios: Baseband to Waves

Optical sensor package

Optical illuminator module and related techniques