Brandon Holybee
Intel
10 Papers
13 Citations
Brandon Holybee is an academic researcher from Intel. The author has contributed to research in topics: NMOS logic & Titanium. The author has an hindex of 4, co-authored 8 publications. Previous affiliations of Brandon Holybee include University of Illinois at Urbana–Champaign.
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Papers
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications
Han Wui Then,Huang Cheng-Ying,B. Krist,Kimin Jun,Kevin Lin,Nidhi Nidhi,T. Michaelos,Mueller Brennen,Rajat Kanti Paul,J. Peck,W. Rachmady,Sansaptak Dasgupta,D. Staines,T. Talukdar,Nicole K. Thomas,Tronic Tristan A,Fischer Paul B,Hafez Walid M,Marko Radosavljevic,P. Agababov,Ibrahim Ban,Robert L. Bristol,Manish Chandhok,Chouksey Siddharth,Brandon Holybee +24 more
- 01 Dec 2019
TL;DR: In this paper, the authors have demonstrated industry's first 300mm 3D heterogeneous integration of high performance, low-leakage high-K dielectric e-mode GaN NMOS and Si PMOS transistors on 300mm high-resistivity (HR) Si(111) substrate, enabled by 300mm GaN MOCVD epitaxy and 3D layer transfer.
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Wetting of liquid lithium on fusion-relevant materials microtextured by femtosecond laser exposure
Sabrina Hammouti,Brandon Holybee,Michael Christenson,Matthew Szott,Kishor Kalathiparambil,Steven Stemmley,Brian E. Jurczyk,David N. Ruzic +7 more
TL;DR: In this paper, the influence of femtosecond laser induced nanostructured surfaces on the wetting degree of liquid lithium versus temperature was explored and the effect of both laser induced topography and chemistry were quantified to explain the observed liquid lithium contact angles on each material.
23
GaN and Si Transistors on 300mm Si(111) enabled by 3D Monolithic Heterogeneous Integration
Han Wui Then,Marko Radosavljevic,P. Agababov,Ibrahim Ban,Robert L. Bristol,Manish Chandhok,Chouksey Siddharth,Brandon Holybee,Huang Cheng-Ying,B. Krist,Kimin Jun,Pratik Koirala,Kevin Lin,T. Michaelos,Rajat Kanti Paul,J. Peck,W. Rachmady,D. Staines,T. Talukdar,Nicole K. Thomas,Tronic Tristan A,Fischer Paul B,Hafez Walid M +22 more
- 16 Jun 2020
TL;DR: In this article, a Si P- and NMOS finfet transistors are integrated with GaN transistors on 300mm Si(111) wafers using 3D integration.
23
Titanium nitride formation by a dual-stage femtosecond laser process
Sabrina Hammouti,Brandon Holybee,Weikun Zhu,Jean Paul Allain,Brian E. Jurczyk,David N. Ruzic +5 more
TL;DR: In this paper, a dual-stage process was designed and aimed to first remove and restructure the native oxide layer of titanium surface through laser irradiation under an argon-controlled atmosphere, and then to maximize titanium nitride formation through an irradiation in a nitrogen reactive environment.
14
Nonlinear compositional and morphological evolution of ion irradiated GaSb prior to nanostructure formation.
TL;DR: It is demonstrated by in-situ grazing-incidence small-angle x-ray scattering and angle-resolved Auger electron spectroscopy that the emergence of an altered compositional depth profile is essential to induce morphological changes at the surface, and this morphological evolution of the surface follows nucleation-and-growth kinetics.