Angle-resolved photoemission spectroscopy (ARPES) has emerged as a leading experimental probe for studying the complex phenomena in quantum materials, a subject of increasing importance The power of this technique stems from the directness and the richness of the momentum-resolved information it can provide, such as band dispersion, Fermi surface topology, and electron self-energy Over the past decade, the significantly improved energy and momentum resolution and carefully matched experiments have turned this technique into a sophisticated tool in characterizing the electronic structure of complex materials This revolution is mostly evident in the study of cuprate high-temperature superconductors More recently, this technique has played a critical role in advancing our understanding of the newly discovered iron-based superconductors and topological insulators In this paper we review some of the recent ARPES results and discuss the future perspective in this rapidly developing field

Angle-Resolved Photoemission Studies of Quantum Materials

The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands Furthermore, we demonstrate the crafting of nonvo

Ferroelectric Control of the Spin Texture in GeTe

Time-of-flight momentum microscopy is developed. It enables direct three-dimensional mapping of the topology of the Fermi surface, identification of electron and hole pockets, and quantification of Fermi velocity as a function of wavevector.

Direct 3D mapping of the Fermi surface and Fermi velocity

Similar to the importance of XRD in experiments, ab initio calculations, as a powerful tool, have been applied to predict the new potential materials and investigate the intrinsic properties of materials in theory. As a typical solid-solution material, the large degree of uncertainty of high-entropy alloys (HEAs) results in the difficulty of ab initio calculations application to HEAs. The present review focuses on the available ab initio based solid-solution models (virtual lattice approximation, coherent potential approximation, special quasi-random structure, similar local atomic environment, maximum-entropy method, and hybrid Monte Carlo/molecular dynamics) and their applications and limits in single phase HEAs.

/pdf/a-review-of-solid-solution-models-of-high-entropy-alloys-17yrmb84pm.pdf

A Review of Solid-Solution Models of High-Entropy Alloys Based on Ab Initio Calculations

Entanglement of the spin-orbit and magnetic order in multiferroic materials bears a strong potential for engineering novel electronic and spintronic devices. Here, we explore the electron and spin structure of ferroelectric alpha-GeTe thin films doped with ferromagnetic Mn impurities to achieve its multiferroic functionality. We use bulk-sensitive soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to follow hybridization of the GeTe valence band with the Mn dopants. We observe a gradual opening of the Zeeman gap in the bulk Rashba bands around the Dirac point with increase of the Mn concentration, indicative of the ferromagnetic order, at persistent Rashba splitting. Furthermore, subtle details regarding the spin-orbit and magnetic order entanglement are deduced from spin-resolved ARPES measurements. We identify antiparallel orientation of the ferroelectric and ferromagnetic polarization, and altering of the Rashba-type spin helicity by magnetic switching. Our experimental results are supported by first-principles calculations of the electron and spin structure.

/pdf/entanglement-and-manipulation-of-the-magnetic-and-spin-orbit-eahy3z2g7a.pdf

Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors.

強誘電性α-GeTe(111)薄膜における表面及びバルクRashba状態のスピンマッピング

We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially filled Ni 3d states of occupancy n_d = 9.2. On the basis of a comparative study of Ni and Fe using scanning tunneling microscopy and ab initio calculations we are able to relate the element specific moment formation to a local Stoner criterion. While Fe adatoms form large spin moments of m_s = 2.54 mu_B with out-of-plane anisotropy due to a sufficiently large density of states at the Fermi energy, Ni remains well below an effective Stoner threshold for local moment formation. With the Fermi level remaining in the bulk band gap after adatom deposition, non-magnetic Ni and preferentially out-of-plane oriented magnetic Fe with similar structural properties on Bi2Te2Se surfaces constitute a perfect platform to study off-on effects of time-reversal symmetry breaking on topological surface states.

/pdf/non-magnetic-ground-state-of-ni-adatoms-on-te-terminated-30rwpdp9at.pdf

Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators

The breaking of bulk inversion symmetry in ferroelectric semiconductors causes a Rashba-type spin splitting of electronic bulk bands. This is shown by a comprehensive mapping of the spin polarization of the electronic bands in ferroelectric α- GeTe(111) films using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of more than 10 000 data points. The experiment reveals an opposite spin helicity of the inner and outer Rashba bands with a different spin polarization in agreement with theoretical predictions, confirming a complex spin texture of bulk Rashba states. The outer band has about twice larger spin polarization than the inner one, giving evidence of a spin-orbit effect being related to the orbital composition of the band states. The switchable inner electric field of GeTe implies new functionalities for spintronic devices.

/pdf/spin-mapping-of-surface-and-bulk-rashba-states-in-338s6hvltn.pdf

Spin mapping of surface and bulk Rashba states in ferroelectric α -GeTe(111) films

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強誘電性α-GeTe(111)薄膜における表面及びバルクRashba状態のスピンマッピング

Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators

Spin mapping of surface and bulk Rashba states in ferroelectric α -GeTe(111) films