Boguslawa Adamowicz
Silesian University of Technology
60 Papers
303 Citations
Boguslawa Adamowicz is an academic researcher from Silesian University of Technology. The author has contributed to research in topics: Surface photovoltage & Surface states. The author has an hindex of 14, co-authored 59 publications. Previous affiliations of Boguslawa Adamowicz include Hokkaido University.
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Papers
XPS study of the L-CVD deposited SnO2 thin films exposed to oxygen and hydrogen
TL;DR: In this article, the influence of exposition of the as-deposited samples to oxygen O2 and hydrogen H2 on their stoichiometry was determined by deconvolution of the core level XPS peaks.
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Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors
TL;DR: In this paper, the impact of states at the insulator/AlGaN interface on the capacitance-voltage (C-V) characteristics of a metal/insulator/alGaN/GaN heterostructure (MISH) capacitor was examined using a numerical solver of a Poisson equation and taking into account the electron emission rate from the interface states.
Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future
TL;DR: In this paper, a survey of surface passivation and MISFETs is made, and Fermi level pinning at insulator-semiconductor interface is discussed, and a brief review is made on recent approaches of interface control for high-k III-V MIS structures.
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The comparative XPS and PYS studies of SnO2 thin films prepared by L-CVD technique and exposed to oxygen and hydrogen
TL;DR: In this article, the electronic properties of the space charge layer of the tin dioxide thin films, prepared by the laser-induced chemical vapour deposition (L-CVD), have been studied using X-ray photoelectron spectroscopy (XPS) and photoemission yield spectra (PYS).
64
Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity
TL;DR: In this article, a theoretical analysis of surface recombination is performed for n-Si, GaAs and InP surfaces under photo-excitation in terms of the so-called effective surface recombinations velocity Seff.
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