Today there is a strong interest in the scientific and industrial community concerning the use of biopolymers for electronic applications, driven mainly by low-cost and disposable applications. Adding to this interest, we must recognise the importance of the dream of wireless auto-sustained and low-energy-consumption electronics. This dream can be fulfilled by cellulose paper, the lightest and the cheapest known substrate material, as well as the Earth's major biopolymer and of tremendous global economic importance. Most of the paper used up to now is optimised in terms of the required mechanical and physical properties to be used as the support of inks of different origins. In the future, specific electronic heterogeneous paper sheets should be fabricated aiming to get paper fibers with required bulk and surface functionalities, proper water/vapour barrier, size and diameter/thickness of the fibrils and full paper thickness. This will be the function of components/devices to be incorporated/integrated such as thin-film transistors, complementary metal oxide semiconductor devices, passive electronic components (resistances, inductors and capacitors), memory transistors, electrochromics and thin-film paper batteries. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Electronics with and on Paper

been realized using organic thin-fi lm transistors (OTFTs) as the essential element. In the majority of these applications OTFTs are integrated either in the form of arrays or as digital logic. The fundamental building block of digital logic is the inverter, a circuit that inverts an input signal. Much work has been devoted in the last fi ve years to design unipolar inverters using p-typeonly OTFTs. [ 18‐23 ] Unfortunately, unipolar logic based on single gate OTFTs always suffers from high power consumption and low noise margin coupled with high noise margin variability and therefore impedes the fabrication of complex circuits having hundreds or more logic gates. [ 19,22,23 ] In this context, it stands

Cellulose‐Derivative‐Based Gate Dielectric for High‐Performance Organic Complementary Inverters

Tin-based anode materials with high capacity attract wide attention of researchers and become a strong competitor for the next generation of lithium-ion battery anode materials. However, the poor electrical conductivity and severe volume expansion retard the commercialization of tin-based anode materials. Here, SnO2-SnS2@C nanoparticles with heterostructure embedded in a carbon matrix of nitrogen-doped graphene (SnO2-SnS2@C/NG) is ingeniously designed in this work. The composite was synthesized by a two-step method. Firstly, the SnO2@C/rGO with a nano-layer structure was synthesized by hydrothermal method as the precursor, and then the SnO2-SnS2@C/NG composite was obtained by further vulcanizing the above precursor. It should be noted that a carbon matrix with nitrogen-doped graphene can inhibit the volume expansion of SnO2-SnS2 nanoparticles and promote the transport of lithium ions during continuous cycling. Benefiting from the synergistic effect between nanoparticles and carbon matrix with nitrogen-doped graphene, the heterostructured SnO2-SnS2@C/NG further fundamentally confer improved structural stability and reaction kinetics for lithium storage. As expected, the SnO2-SnS2@C/NG composite exhibited high reversible capacity (1201.2 mA h g-1 at the current rate of 0.1 A g-1), superior rate capability and exceptional long-life stability (944.3 mAh g-1 after 950 cycles at the current rate of 1.0 A g-1). The results demonstrate that the SnO2-SnS2@C/NG composite is a highly competitive anode material for LIBs.

/pdf/heterostructured-sno2-sns2-c-embedded-in-nitrogen-doped-1rgyl93fd5.pdf

Heterostructured SnO2-SnS2@C Embedded in Nitrogen-Doped Graphene as a Robust Anode Material for Lithium-Ion Batteries.

High performance nitrogen dioxide sensor based on organic field-effect transistor utilizing ultrathin CuPc/PTCDI-C8 heterojunction

Low-temperature (LT) polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) are viable contenders for use in the backplanes of flat-panel displays and in systems-on-glass because of their superior electrical properties compared with silicon and oxide semiconductors. However, LT poly-Ge shows strong p-type characteristics. Therefore, it is not easy to reduce the leakage current using a single-gate structure such as a top-gate or bottom-gate structure. In this study, self-aligned planar metal double-gate p-channel junctionless LT poly-Ge TFTs are fabricated on a glass substrate using a 15-nm-thick solid-phase crystallized poly-Ge film and aluminum-induced lateral metallization source–drain regions (Al-LM-SD). A nominal field-effect mobility of 19 cm2 V−1 s−1 and an on/off ratio of 2 × 103 were obtained by optimizing the Al-LM-SD on a glass substrate through a simple, inexpensive LT process.

https://iopscience.iop.org/article/10.7567/JJAP.56.03BB01/pdf

Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistor with thin germanium film on glass substrate

Organic complementary inverters with polyimide films as the surface modification of dielectrics

Organic complementary inverters were fabricated by integrating organic p- and n-channel thin film transistors. Bottom-gate and top-contact organic thin film transistors (OTFTs) with polyimide (PI)-modified silicon oxide dielectrics and silver electrodes exhibit similar carrier mobilities, threshold voltages, drain currents, and hysteresis. A gate-bias stress test was performed on both p- and n-type OTFTs. The threshold voltages and hysteresis decreased according to the space charge separation in the PI layer which could be explained by a space charge model. The complementary inverters based on these organic transistors exhibit high noise margins (NMs), a transfer voltage located at V DD /2, and a gain of 40 with supply voltage V DD of +50 V. The electrical stability of the inverters measured during gate-bias stress reveals that the variations in the NMs and transition voltage remained below 5%.

Analyses of Electrical Properties and Stability of Organic Complementary Transistors

Ferroelectric Field Effect Transistors (FeFETs) have spurred increasing interest in both memories and computing applications, thanks to their CMOS compatibility, low-power operation, and high scalability. However, new security threats to the FeFET-based memories also arise. A major threat is the power analysis side-channel attack (P-SCA), which exploits the power traces of the memory access to obtain data information. There have been several effective efforts on resistive nonvolatile memories (NVMs), but they fail to meet the requirements for secure FeFET-based memories due to the different capacitive FeFETs load. Directly applying these existing countermeasures to the P-SCA protection for FeFETs induces huge challenges, especially for the balance between power side-channel resistance and corresponding overheads. To address this issue, we leverage the unique features of FeFETs and propose ProtFe, namely the protection methods for FeFET-based memories, including the pipelined multi-step write strategy (PiMWrite) and the split array design (SpA). PiMWrite is proposed for general FeFET-based memories, and inserts specially designed intermediate states to mitigate information leakage with pipelined steps to reduce overheads. SpA is proposed for custom FeFET-based memories, and simultaneously writes two split portions of the array with shared minimized peripherals to go beyond the balance between security and overheads. Simulation results show that PiMWrite expands the search space of a single power trace to 21 × and involves nearly zero hardware penalties. SpA presents 33 × search space improvement with negligible latency, 0.6% area, and only 7.1% energy overhead. ProtFe achieves improved balance between security and overheads, compared with the state-of-the-art works.

/pdf/protfe-low-cost-secure-power-side-channel-protection-for-1ximnulp.pdf

ProtFe: Low-Cost Secure Power Side-Channel Protection for General and Custom FeFET-Based Memories

High-Mobility Flexible/Transparent P-Type Copper Iodide Thin-Film Transistors and Complementary Inverters

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Bo Yuan Sun

Author Tools

Chat about Author

Papers

Organic complementary inverters with polyimide films as the surface modification of dielectrics

Analyses of Electrical Properties and Stability of Organic Complementary Transistors

ProtFe: Low-Cost Secure Power Side-Channel Protection for General and Custom FeFET-Based Memories

High-Mobility Flexible/Transparent P-Type Copper Iodide Thin-Film Transistors and Complementary Inverters