This paper describes the nanoindentation behavior of TiVCrZrAl nitride films grown on Si substrates by means of reactive radio-frequency magnetron sputtering at growth temperatures from 150 to 300 °C. We used cross-sectional transmission electron microscopy and X-ray diffraction to analyze the microstructure and crystallinity and nanoindentation techniques to study the hardness and elastic modulus. We found that a face-centered-cubic solid-solution structure with strong (2 0 0), (1 1 1), (2 2 0), and (3 1 1) orientations were revealed by X-ray diffraction. Upon increasing the growth temperature of the films, the hardness and elastic modulus increased to maximum values of 15.2 and 203.5 GPa, respectively.

Effect of microstructure on the nanomechanical properties of TiVCrZrAl nitride films deposited by magnetron sputtering

Berkovich nanoindentation on single SiGe epitaxial films

In this work, gallium nitride (GaN) epilayers were deposited on a-axis sapphire substrate by means of metal organic chemical vapor deposition (MOCVD). Berkovich nanoindentation was used to explore the repetition pressure-induced impairment of the GaN film. The observation of load-displacement vs stress-strain curves concludes that basal slip is implicated in the deformation on the A plane GaN. The increase in the hardness (H) and elastic modulus (E) was determined from cyclic nanoindentation, and resulted in a crack due to the formation of incipient slip bands and/or the to-and-fro motion of mobile dislocation. It is indicated that the generation of individual dislocation and residual deformation of the GaN films are showed by CL mapping analysis. From the morphological studies, it is revealed that the crack was found by means of atomic force microscope (AFM) technique at nine loading/reloading cycles even after the indentation beyond the critical depth on the residual indentation impression. Copyright © 2010 John Wiley & Sons, Ltd.

https://ir.nctu.edu.tw:443/bitstream/11536/8965/1/000289425900010.pdf

Effect of repetition nanoindentation of GaN epilayers on a‐axis sapphire substrates

https://ir.nctu.edu.tw:443/bitstream/11536/15540/1/000301002600002.pdf

Thermal reliability of thin SiGe epilayers

Effect of the adhesion strength of Si and Ge superlattices

https://ir.nctu.edu.tw:443/bitstream/11536/5781/1/000275233900051.pdf

Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics

https://ir.nctu.edu.tw:443/bitstream/11536/5310/1/000278644400015.pdf

Effect of annealing treatment and nanomechanical properties for multilayer Si0.8Ge0.2–Si films

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Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics

Effect of annealing treatment and nanomechanical properties for multilayer Si0.8Ge0.2–Si films