Controlled electromigration of gold nanowires of different cross-sectional areas to form nanogap junctions is studied using a feedback method. A linear correlation between the cross sectional area of the gold nanowires and the power dissipated in the junction during electromigration is observed, indicating that the feedback mechanism operates primarily by controlling the temperature of the junction during electromigration. We also show that the role of the external feedback circuit is to prevent thermal runaway; minimization of series resistance allows controlled electromigration to a significant range of junction resistances with a simple voltage ramp.

Temperature Control of Electromigration to form Gold Nanogap Junctions

This article reviews efforts to structurally characterize metallic nanocontacts. While the electronic characterization of such junctions is relatively straight forward, usually it is technically challenging to study the nanocontact's structure at small length scales. However, knowing that the structure is the basis for understanding the electronic properties of the nanocontact, for example, it is necessary to explain the electronic properties by calculations based on structural models. Besides using a gate electrode, controlling the structure is an important way of understanding how the electronic transport properties can be influenced. A key to make structural information directly accessible is to choose a fabrication method that is adapted to the structural characterization method. Special emphasis is given to transmission electron microscopy fabrication and to thermally assisted electromigration methods due to their potential for obtaining information on both electrodes of the forming nanocontact. Controlled electromigration aims at studying the contact at constant temperature of the contact during electromigration compared to studies at constant temperature of the environment as done previously. We review efforts to calculate electromigration forces. We describe how hot spots are formed during electromigration. We summarize implications for the structure obtained from studies of the ballistic transport regime, tunneling, and Coulomb-blockade. We review the structure of the nanocontacts known from direct structural characterization. Single-crystalline wires allow suppressing grain boundary electromigration. In thin films, the substrate plays an important role in influencing the defect and temperature distribution. Hot-spot formation and recrystallization are observed. We add information on the local temperature and current density and on alloys important for microelectronic interconnects.

/pdf/electromigration-and-the-structure-of-metallic-nanocontacts-481k493pbt.pdf

Electromigration and the structure of metallic nanocontacts

Thesis (Ph.D, Physics, Engineering Physics and Astronomy) -- Queen's University, 2015-10-01 11:31:03.734

Feedback controlled electromigration for the fabrication of point contacts and noise measurement applications

Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field.

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps.

Self-organized nanowire arrays are confined by glancing-angle Au deposition on nanopatterned glass templates prepared by ion beam sputtering. The semi-transparent 1D nanowire arrays are extended over large cm2 areas and are endowed with excellent electrical conductivity competitive with the best transparent conductive oxides (sheet resistance in the range of 5-20 Ohm sq-1). In addition, the nanowires support localized surface plasmon (LSP) resonances, which are easily tunable into the visible and near infrared spectrum and are selectively excited with incident light polarized perpendicularly to the wires. Such substrates, thus, behave as multifunctional nanoelectrodes, which combine good optoelectronic performance with dichroic plasmonic excitation. The electrical percolation process of the Au nanoelectrodes was monitored in situ during growth at glancing angle, both on flat and nanopatterned glass templates. In the first case, we observed a universal scaling of the differential percolation rate, independently of the glancing deposition angle, while deviations from the universal scaling were observed when Au was confined on nanopatterned templates. In the latter case, the pronounced shadowing effect promotes the growth of locally connected 1D Au nanosticks on the 'illuminated' ripple ridges, thus, introducing strong anisotropies with respect to the case of a 2D percolating network.

Template-assisted growth of transparent plasmonic nanowire electrodes

The electrical resistance $R$ of metallic nanocontacts subjected to controlled cyclic electromigration in ultrahigh vacuum has been investigated in situ as a function of applied voltage $V$. For sufficiently small contacts, i.e., large resistance, a decrease of $R(V)$ while increasing $V$ is observed. This effect is tentatively attributed to the presence of contacts separated by thin vacuum barriers in parallel to ohmic nanocontacts. Simple model calculations indicate that both thermal activation or tunneling can lead to this unusual behavior. We describe our data by a tunneling model whose key parameter, i.e., the tunneling distance, changes because of thermal expansion due to Joule heating and/or electrostatic strain arising from the applied voltage. Oxygen exposure during electromigration prevents the formation of negative $R(V)$ slopes, and at the same time enhances the probability of uncontrolled melting, while other gases show little effects. In addition, indication for field emission has been observed in some samples.

/pdf/resistance-voltage-dependence-of-nanojunctions-during-5bqh1nvhlj.pdf

Resistance-voltage dependence of nanojunctions during electromigration in ultrahigh vacuum

We report on the application of a feedback-controlled electromigration technique for the formation of nanometre-sized gaps in mesoscopic gold wires and rings. The effect of current density and temperature, linked via Joule heating, on the resulting gap size is investigated. Our experiments include in situ measurements of the evolution of the electrical resistance and of the structure of the device during electromigration. Experimentally, a good thermal coupling to the substrate turned out to be crucial to reach electrode spacings below 10 nm and to avoid overall melting of the nanostructures. This finding is supported by numerical calculations of the current-density and temperature profiles for structure layouts subjected to electromigration. The numerical method can be used for optimizing the layout so as to predetermine the location where electromigration leads to the formation of a gap.

/pdf/two-dimensional-simulations-of-temperature-and-current-2az44dlypi.pdf

Two-dimensional simulations of temperature and current-density distribution in electromigrated structures

We report on the application of a feedback-controlled electromigration technique for the formation of nanometer-sized gaps in mesoscopic gold wires and rings. The effect of current density and temperature, linked via Joule heating, on the resulting gap size is investigated. Experimentally, a good thermal coupling to the substrate turned out to be crucial to reach electrode spacings below 10 nm and to avoid overall melting of the nanostructures. This finding is supported by numerical calculations of the current-density and temperature profiles for structure layouts subjected to electromigration. The numerical method can be used for optimizing the layout so as to predetermine the location where electromigation leads to the formation of a gap.

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Resistance-voltage dependence of nanojunctions during electromigration in ultrahigh vacuum

Two-dimensional simulations of temperature and current-density distribution in electromigrated structures

Two-dimensional simulations of temperature and current-density distribution in electromigrated structures