Biplab Sarkar
Indian Institute of Technology Roorkee
57 Papers
33 Citations
Biplab Sarkar is an academic researcher from Indian Institute of Technology Roorkee. The author has contributed to research in topics: Doping & Schottky barrier. The author has an hindex of 12, co-authored 40 publications. Previous affiliations of Biplab Sarkar include North Carolina State University & Indian Institute of Technology Guwahati.
Chat about Author
Papers
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
Isaac Bryan,Zachary Bryan,Shun Washiyama,Pramod Reddy,Benjamin E. Gaddy,Biplab Sarkar,M. Hayden Breckenridge,Qiang Guo,Milena Bobea,James Tweedie,Seiji Mita,Douglas L. Irving,Ramon Collazo,Zlatko Sitar +13 more
TL;DR: In this article, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN.
123
Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications
TL;DR: In this paper, a study has been performed to understand the gradual reset in Al2O3 resistive random access memory (RRAM) devices, where a significantly higher number of vacancies are created in the dielectric during the set event.
Thermal conductivity of single-crystalline AlN
Robert Rounds,Biplab Sarkar,Andrew Klump,Carsten Hartmann,Toru Nagashima,Ronny Kirste,Alexander Franke,Matthias Bickermann,Yoshinao Kumagai,Zlatko Sitar,Ramon Collazo +10 more
TL;DR: The thermal conductivity of AlN single crystals grown by physical vapor transport (PVT) and hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω method as discussed by the authors.
64
The role of chemical potential in compensation control in Si:AlGaN
Shun Washiyama,Pramod Reddy,Biplab Sarkar,Mathew Hayden Breckenridge,Qiang Guo,Pegah Bagheri,Andrew Klump,Ronny Kirste,James Tweedie,Seiji Mita,Zlatko Sitar,Ramon Collazo +11 more
TL;DR: In this paper, a chemical potential control (CPC) model was proposed to reduce compensation in Si-doped Al-rich AlGaN by impeding the formation of VIII+nSiIII complexes under III-richer conditions, while the impurity compensation by nitrogen site (CN) was reduced by making the growth environment Nricher.
44
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
Pramod Reddy,Biplab Sarkar,Felix Kaess,Michael Gerhold,Erhard Kohn,Ramon Collazo,Zlatko Sitar +6 more
TL;DR: In this paper, defect-free homogeneous behavior of Ni Schottky contacts patterned on surface treated n-GaN by photolithography with unity ideality factor, high temperature stability, and low reverse leakage was reported.
39