The properties of thin films of Cu‐doped with different percentages of Mg were investigated. It was found that as‐deposited films of Cu (2 at. % Mg) oxidize orders of magnitude more slowly than do those of pure Cu. More importantly, when Cu(2 at. % Mg) films are annealed in Ar at 400 °C for 30 min, a thin protective layer of magnesium oxide forms on the surface and completely stops further oxidation. This annealing step also reduces the resistivity of films to the value essentially the same as that of pure sputtered copper films. Films of Cu (2 at. % Mg) also adhere to SiO2 much better than do films of pure copper. Furthermore, annealing studies show that this material remains microscopically smooth and shows no diffusion into SiO2 at temperatures up to 700 °C.

Oxidation resistant high conductivity copper films

The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.

Liquid crystal display device and manufacturing method therefor

Ultrasonic spot welding of magnesium-to-aluminum alloys with a copper interlayer: Microstructural evolution and tensile properties

A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.

Passivated copper conductive layers for microelectronic applications and methods of manufacturing same

The dominant diffusion species in the formation of Al2Cu, Mg2Cu, and Mg2Ni have been determined. These compounds, rich in the lower melting point elements, are the first phases formed in metal/metal binary reactions. It is quite surprising to find that in all three systems, the minority elements, i.e., Cu or Ni, are the dominant diffusing species. This is in marked difference with results obtained in many metal/metal and metal/Si systems, where the dominant diffusion species are usually the majority elements in the initially formed compounds.

The dominant diffusing species and initial phase formation in Al-Cu, Mg-Cu, and Mg-Ni systems

The reliability of copper multilevel interconnections requires good adhesion and the prevention of copper diffusion into the interlevel dielectric. Magnesium is a candidate for an adhesion layer and diffusion barrier for copper due to the high heats of formation of magnesium oxides, fluorides and sulfides and the formation of low resistivity compounds of Mg with copper. An investigation of the interactions in thin films of copper and magnesium has been carried out in the temperature range of 25°C to 500°C. The results of these reactions leading to phase formation in Cu/Mg bilayers deposited on Si3N4 or SiO2 using X-ray diffraction, in situ sheet resistance, and Rutherford backscattering measurements are presented in this paper. It was found that the Mg-rich phase CuMg2 is the first phase to form on annealing to approximately 215°C, followed by the formation of the Cu-rich phase Cu2Mg at about 380°C in the presence of excess Cu.

Intermetallic Reactions Between Copper and Magnesium as an Adhesion / Barrier Layer

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Intermetallic Reactions Between Copper and Magnesium as an Adhesion / Barrier Layer