The invention discloses atomic layer deposition equipment and application. An inert gas storage tank is connected with an air inlet of a first flow meter and an air inlet of a second flow meter respectively through air delivery pipes; an air outlet of the first flow meter and an air outlet of the second flow meter are respectively connected with an air inlet of a reaction cavity through the air delivery pipes; an air outlet of the reaction cavity is connected with a vacuum pump; a first reaction material tank is also arranged on the air delivery pipe between the air outlet of the first flow meter and the air inlet of the reaction cavity; a second reaction material tank is arranged on the air delivery pipe between the air outlet of the second flow meter and the air inlet of the reaction cavity; a first temperature control device is arranged in the first reaction material tank; a second temperature control device is arranged in the second reaction material tank; and a third temperature control device is arranged in the reaction cavity. The atomic layer deposition equipment is simple in structure, and convenient to use; the cost is reduced; the thickness of the film is controlled by controlling the introduction cycle number when the atomic layer deposition equipment is used.

Atomic layer deposition equipment and application

The invention discloses a realization method for film preparation by applying an atomic layer deposition technology. A different ALD technological mode of a vacuumizing mode or a variable flow mode is used for changing an intake quantity of sweeping gas in a reaction cavity to form disturbance of an airflow field in the cavity, so that the sweeping effect on a surplus reaction source and a reaction byproduct can be effectively improved, the process time of film growth period is shortened, the productivity is improved, the parasitic CVD reaction can be reduced on the basis, the ALD process quality is improved, and the film uniformity is improved.

Realization method for film preparation by applying atomic layer deposition technology

The invention discloses a differential mixed chemical vapor deposition device. The device consists of a box body, a runner plate, an insulation sealing gasket, a reaction chamber, a support column, a base, a heating system and a radio-frequency system. The runner plate is provided with two gas inlets for respectively introducing two different reaction gases; the two gases are uniformly distributed in flowing field space under a differential shunting effect in flowing fields of the runner plates; and the two shunted gases can be respectively mixed for spraying by nozzles. The differential mixed runner can improve the gas mixing uniformity and the gas distribution uniformity, so that a chemical vapor deposition film is more uniform, a gas mixing device is saved, and the equipment is simplified; an electromagnetic induction heating mode is adopted to achieve fast heating speed, increment of the utilization rate of electric energy and reduction of the cost; and in addition, the chemical vapor deposition device can close one inlet and open the other inlet for introducing the mixed reaction gas to improve the gas distribution uniformity.

Differential mixed chemical vapor deposition device

The embodiment of the invention discloses a reaction chamber of a chemical vapor deposition apparatus. The reaction chamber comprises a pedestal used for receiving substrates, and at least two spray heads arranged opposite to the pedestal. The spray heads are used for providing reaction gas for the substrates. At least one substrate can be placed below each spray head. With the apparatus provided by the invention, problems such as processing difficulty and high cost of large-size spray head in the reaction chamber are solved. Compared with a reaction chamber with a single spray head, two or more spray heads are arranged in the reaction chamber provided by the invention, such that reaction gas distribution uniformity on the substrates can be improved, and the uniformity of formed epitaxial layer is improved.

Reaction chamber of chemical vapor deposition apparatus

The invention discloses a dual-mode system used for film growth and a control method of the dual-mode system. The dual-mode system comprises a non-reaction gas source, a first reaction source, a second reaction source, a reaction chamber with a rotary carrying platform, and a control device, wherein the control device controls mutual conversion of the system between two reaction modes; in the first reaction mode, the control device only provides two reaction sources to communicate with a fluid in the reaction chamber; in the second reaction mode, the control device controls the non-reaction gas source and the two reaction sources to communicate with the fluid in the reaction chamber; the two reaction sources form mutually spaced and sequentially arranged independent regions on the surface of the rotary carrying platform along the rotating direction of the rotary carrying platform through the isolation function of the non-reaction resource; and independent growth reaction occurs in the independent region formed by each reaction source. The dual-mode system disclosed by the invention has the advantage of realizing in-situ conversion of OCVD (Oxidative Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) reaction modes, thereby eliminating contradiction between the maximum efficiency of raw materials used for deposition and the quality optimization of a deposited film.

Dual-mode system used for film growth and control method of dual-mode system

The invention provides an atomic layer deposition apparatus employing a uniform air intake system, and relates to atomic layer deposition apparatuses The objective of the invention is to solve the problem of low deposition efficiency in the prior art caused by poor uniformity of contact between a precursor and a substrate or an upper atomic layer, a low utilization rate of reactants and a long growth period of materials The apparatus comprises a reaction chamber, a first precursor container, a second precursor container, an auxiliary sweeping gas container, a first gas supply pipeline, a second gas supply pipeline, an auxiliary sweeping gas supply pipeline, a uniform air intake system, a chamber cover, etc, wherein, the first gas supply pipeline, the second gas supply pipeline and the auxiliary sweeping gas supply pipeline are respectively connected with the first precursor container, the second precursor container and the auxiliary sweeping gas container, the first gas supply pipeline and the second gas supply pipeline respectively communicate with the uniform air intake system in the reaction chamber through the chamber cover of the reaction chamber, and the uniform air intake system is fixed at the lower part of the chamber cover The apparatus meets scientific research and production needs

Atomic layer deposition apparatus employing uniform air intake system

The invention discloses a method for growing a semiconductor film by using a composite model, and an apparatus thereof, and relates to the fields of semiconductor materials growth technology and equipment manufacturing. In the prior art, the prepared film has disadvantages of poor crystallization quality and slow production rate. With the present invention, the problems in the prior art are solved. The method provided by the present invention comprises that: a ALD reaction precursor A is introduced to form a single atomic layer on a substrate surface; then a ALD reaction precursor B is introduced, and reacts with the ALD reaction precursor A to form a single-layer A-B film; the above steps are repeated to form a multilayer -A-B-A-B-A-B- film; then a MOCVD reaction precursor A and a MOCVD reaction precursor B are synchronously introduced to generate a chemical reaction on the substrate; then the resulting reaction product is combined with the multilayer -A-B-A-B-A-B- film to obtain thesemiconductor film grown through the composite model. According to the method provided by the present invention, the advantages of the two growth methods are effectively combined, the composite modelof the two growth models is realized, and the method is applicable for the industrial production on a large scale. The present invention further provides the apparatus for growing the semiconductor film by using the composite model.

Method for growing semiconductor film by using composite model, and apparatus thereof

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Atomic layer deposition apparatus employing uniform air intake system

Method for growing semiconductor film by using composite model, and apparatus thereof