Al2O3/AlGaN/GaN enhancement-mode metal-isolator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a partially recessed (Al) GaN barrier was realized by a fluorine plasma implantation/etch technique. By properly adjusting the RF power driving the fluorine plasma, the fluorine plasma is able to produce two desirable results: 1) a well-controlled slow dry etching for gate recess and 2) implanting fluorine ions into the AlGaN barrier. The fluorine ions become negatively charged in the barrier layer and induce a positive shift in the threshold voltage. The proposed MIS-HEMT exhibits a threshold voltage ( $V_{\mathrm {\mathbf {TH}}})$ of +0.6 V at a drain current of $10~\mu \text{A}$ /mm, a maximum drive current of 730 mA/mm, an ON-resistance of $7.07~\Omega \,\cdot \,$ mm, and an OFF-state breakdown voltage of 703 V at an OFF-state drain leakage current of $1~\mu \text{A}$ /mm. From room temperature to 200 °C, the device exhibits a small negative shift of $V_{\mathrm {\mathbf {TH}}}$ ( $\sim 0.5$ V) that is attributed to the high-quality dielectric/F-implanted-(Al) GaN interface and the partially recessed barrier.

Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier”

Correspondence Correction to "Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier"

This paper introduces an advanced methodology for fast 3-D Technology Computer Aided Design (TCAD) electrothermal simulation for the analysis of power devices. The proposed methodology is based on coupling finite element method (FEM) thermal and circuit electrical simulation in a mixed-mode setup. A power InAlN/GaN high-electron mobility transistor (HEMT) is used to perform validation of the designed electrothermal simulation. A new equivalent temperature-dependent nonlinear analytical large signal circuit model of HEMT is proposed. The model is implemented to Synopsys TCAD Sentaurus using compact model interface. The designed electrothermal simulation methodology is developed to shorten the simulation time for complex 3-D devices. This approach combines the speed and accuracy, and couples temperature nonuniformity to the active device electrothermal behavior. The simulation results are compared with the measured data and results of 2-D FEM simulations. The features and limitations of the methods are analyzed and presented.

Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs

In this study, we investigated the process-dependent dynamic on-resistance [RDS(on)] characteristics of recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistors with a SiO2 gate oxide. In order to improve the dynamic RDS(on) characteristics, the processing technology was carefully optimized, including post-metallization annealing and field plate formation. A threshold voltage of 2.0 V was achieved with a breakdown voltage of 1070 V. The fabricated device exhibited a DC RDS(on) of 5.22 mΩcm2 with very stable dynamic RDS(on) characteristics, i.e., a less than 20% increase up to the drain voltage of 200 V.

https://iopscience.iop.org/article/10.7567/APEX.7.111002/pdf

Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor

ZnO/ZnS hetero-junction nanocone arrays with identical crystallographic orientation have been synthesized using a vapor transport deposition process. The side by side hetero-junction arrays grow on a ZnO basal microflake with an orientation relationship of [0001]ZnO∥[0001]ZnS. The growth mechanism is proposed on the basis of the crystal structure and catalyst theory. ZnO/ZnS hetero-junction nanocone arrays acting as cold electron emitters display excellent field emission performance with the turn-on field as low as 0.02 V μm−1 and the threshold field down to 0.6 V μm−1, also the field-enhancement factor is up to 5.6 × 104. The measured superior emission characteristics, which are even better than carbon nanotubes, could be attributed to the accumulation of electrons inside the mid-layers of the side by side ZnO/ZnS hetero-junction. The new nanoarchitectures could be an important candidate for potential nanoelectronic devices.

Side by side ZnO/ZnS hetero-junction nanocrystal arrays with superior field emission property

This study investigated on polarization-induced remote interfacial charge scattering, a scattering mechanism caused by the interfacial polarization charge, for Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors (HEMTs). Results show that remote interfacial charge scattering plays a critical role in the mobility of two-dimensional electron gas (2DEG) in thin barrier HEMTs. The electronic mobility limited by remote charge scattering is found to be a function of the fixed charge density induced by the Al2O3 layer, 2DEG density, and barrier thickness. Results of this study can be used in designing structures to generate higher electron mobility in Al2O3/AlGaN/GaN double heterojunction HEMTs.

Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction

The converse piezoelectric effect on misfit dislocation (MD) generation and scattering in metal/AlGaN/GaN structures was quantitatively studied. The critical thickness of the structure decreased with increasing electric field in the growth direction and reached the maximum value at the zero field. The predicted MD density was in the order of 105 cm−1, which can be tuned by the gate voltage. The calculation result shows that MD scattering is a dominant limitation for electron mobility.

Converse piezoelectric effect induced misfit dislocation scattering in metal/AlGaN/GaN heterostructures

The electric field-induced surface and interface roughness scatterings have been investigated by taking both the forward and converse piezoelectric effects into account in AlGaN/GaN high electron mobility transistors. The results show that the converse piezoelectric effect can compensate the polarization fields in the barrier of AlGaN/GaN heterostructure, leading to weaker electric field scatterings. Additionally, the electronic mobilities limited by both surface and interface roughness can be modulated by the gate bias, based on which we can design the devices to obtain higher mobility.

Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors

Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

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