Transparent conductors as solar energy materials: A panoramic review

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Surface modification of titanium and titanium alloys: Technologies, developments, and future interests

p-Type ZnO materials: Theory, growth, properties and devices

Extensive calculations based on density functional theory have been carried out to understand the origin of magnetism in undoped ZnO thin films as found in recent experiments. The observed magnetism is confirmed to be due to Zn, instead of O, vacancy. The main source of the magnetic moment, however, arises from the unpaired 2p electrons at O sites surrounding the Zn vacancy with each nearest-neighbor O atom carrying a magnetic moment ranging from 0.490 to 0.740 B. Moreover, the study of vacancy-vacancy interactions indicates that in the ground state, the magnetic moments induced by Zn vacancies prefer to ferromagnetically couple with the antiferromagnetic state lying 44 meV higher in energy. Since this is larger than the thermal energy at room temperature, the ferromagnetic state can be stable against thermal fluctuations. Calculations and discussions are also extended to ZnO nanowires that have larger surface to volume ratio. Here, the Zn vacancies are found to lead to the ferromagnetic state too. The present theoretical study not only demonstrates that ZnO samples can be magnetic even without transition-metal doping but also suggests that introducing Zn vacancy is a natural and an effective way to fabricate magnetic ZnO nanostructures. In addition, vacancy mediated magnetic ZnO nanostructures may have certain advantages over transition-metal doped systems in biomedical applications.

https://absimage.aps.org/image/MAR08/MWS_MAR08-2007-004197.pdf

Zinc Vacancy induced magnetism in ZnO thin films and nanowires

A systematic study on the magnetic and electrical transport properties of single-phase wurtzite Zn1−xCuxO is performed. Efros variable range hopping dominates the conduction, which is accompanied by a ferromagnetic order up to 700 K for x>1%. Both the first-principles calculations and Cu/Al co-doping experiments suggest that the spontaneous spin polarization originates from the p-d exchange interaction between O 2p and Cu 3d orbitals. Furthermore, our results are consistent with the scenario that the intrinsic ferromagnetism is established through indirect interactions between bound magnetic polarons mediated by magnetic impurities.

Bound magnetic polarons and p-d exchange interaction in ferromagnetic insulating Cu-doped ZnO

We investigate the room temperature ferromagnetism in band gap tunable MgxZn1−xO (x≤0.22) alloy thin films and find that ferromagnetism is significantly enhanced in p-type MgxZn1−xO (x≥0.17) compared with the n-type counterparts (x≤0.15). Temperature-dependent photoluminescence measurements reveal the correlation between the p-type behavior, enhanced ferromagnetism, and zinc vacancies. First-principle calculations demonstrate that the formation energy of zinc vacancies decreases with the increasing Mg content and the zinc vacancies in MgxZn1−xO alloys stabilize the ferromagnetic coupling. Our results suggest a viable route to tune the magnetic properties of oxides through band gap and defect engineering.

Tuning ferromagnetism in MgxZn1−xO thin films by band gap and defect engineering

Our complementary magnetic and photoluminescence measurements reveal the correlation between the donor-acceptor complex and the ferromagnetic order in Cu-doped SnO2 thin films. Oxygen vacancies (VO) and Cu dopants form defect complexes of donor-acceptor pairs, and the associated spin-polarized impurity band leads to the narrowing of bandgap. Electronic structure calculations based on the first-principles method demonstrate that the Cu-VO complex has low formation energy and can stabilize the ferromagnetic coupling. Our results suggest that intrinsic defects and their complexes with dopants play a key role for establishing the ferromagnetic order in doped wide-bandgap oxides.

/pdf/role-of-donor-acceptor-complexes-and-impurity-band-in-59y8s9mw6q.pdf

Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO2 thin films

Correlation between wear resistance and subsurface recrystallization structure in copper

Dry sliding tribological properties of nanostructured copper subjected to dynamic plastic deformation

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