Crystalline-silicon heterojunction back contact solar cells represent the forefront of photovoltaic technology, but encounter significant challenges in managing charge carrier recombination and transport to achieve high efficiency. In this study, we produced highly efficient heterojunction back contact solar cells with a certified efficiency of 27.09% using a laser patterning technique. Our findings indicate that recombination losses primarily arise from the hole-selective contact region and polarity boundaries. We propose solutions to these issues and establish a clear relationship between contact resistivity, series resistance, and the design of the rear-side pattern. Furthermore, we demonstrate that the wafer edge becomes the main channel for current density loss caused by carrier recombination once electrical shading around the electron-selective contact region is mitigated. With the advanced nanocrystalline passivating contact, wafer edge passivation technologies and meticulous optimization of front anti-reflection coating and rear reflector, achieving efficiencies as high as 27.7% is feasible. The management of charge carrier recombination and transport in heterojunction back contact solar cells poses significant challenges in achieving a high efficiency. Here, authors analyze various loss mechanisms of devices fabricated by laser patterning, and achieve a certified efficiency of 27.09%. 

27.09%-efficiency silicon heterojunction back contact solar cell and going beyond

Abstract Photodetectors are one of the most essential optoelectronics nowadays. Perovskites have emerged as one of the potential materials for photodetectors due to their high absorption efficiency over a wide range of wavelengths, high charge mobility, strong mechanical deformability, and solution processability. In this study, interfacial engineering using self‐assembled monolayers (SAMs) is explored to improve the performance of perovskite photodetectors. SAMs with different terminal groups exhibit distinct surface energy, and they all result in a reduced exciton lifetime of the perovskite due to charge transfer between polycrystalline perovskite and the SAMs. In particular, the photodetector modified with (4‐hydroxyphenyl)phosphonic acid ( OH ) exhibits the highest electron mobility of 0.8 cm 2 V −1 s −1 under 450‐nm light illumination. In addition, it shows excellent detector performance with an ultrafast photoresponse of &lt; 14 ms, a high photoresponsivity of 5600 AW −1 , and a high specific detectivity of 5.9 × 10 10 Jones at a low light intensity of 18 µW cm −2 . The excellent photoresponse and device switchability are attributed to the high surface energy of OH , the resulting homogeneous perovskite film morphology, the high charge transfer efficiency, and the favorable energy level alignment. The studies provide new prospects for the development of emerging perovskite photodetectors. 

Modulating the Photoresponsivity of Perovskite Photodetectors through Interfacial Engineering of Self‐Assembled Monolayers

This is the first investigation of the triumvirate lanthanide doped novel perovskite host i.e. [Sm3+-Eu3+-Tm3+]:CsPbI2.7Br0.3 (SET:C-PVSK). Furthermore, this is also the first elucidation of using SET:C-PVSK in advanced energy applications. SET:C-PVSK was modulated thermally and it remained optically active for 28 days spanning over the range of 1.66–1.72 eV. Pristine and doped spin coated thin films acquired cubic phase with the average crystallite size of 68.91 and 74.44 nm, respectively. SET:C-PVSK thin films deposited via spin coating were evidence with the smoother morphology showing maximal coverage. Doped SET:C-PVSK absorber layer inside perovskite solar cells expressed excellent photovoltaic performance with 15.55 % efficiency and a fill factor of 71.21 %. Such performance signified excellent defect passivation and suppression of the charge recombination. The electrochemical performance of the pristine and doped electrode was compared for pristine and doped electrode. SET:C-PVSK was found to be a commendable electrode material with the elevated hydrogen production activity (overpotential = 140 mV and Tafel slope = 122.6 mV dec−1). Furthermore, with an extended service life, SET:C-PVSK attained the unit capacity of 445 mAH g−1 and tumbling equivalent series resistance (Rs) of 0.51 Ω, respectively. 

Probing the synergetic impacts of temperature modulation and lanthanide doping on [Sm3+-Eu3+-Tm3+]:CsPbI2.7Br0.3 designed for advanced energy technologies

The transition metal-doped CsPbX3 family is regarded as promising materials to be applied in optoelectronic devices. However, the understanding of the underlying luminescence mechanism is still limited. In our study, the mechanism of dual emission for Fe-doped CsPbCl3 is determined from the first-principles methods. Fe doping can cause lattice compression and octahedral deformation and importantly improve the stability of CsPbCl3 well. The spin-included band structure calculation shows that the Fe concentration mainly modulates the energy level position of eg↓ (Fe 3d spin-down state). The eg↓ location in the band gap and near the conduction band minimum can induce efficient energy transfer from the conduction band minimum to the eg↓ state, which leads to the electronic transition eg↓ → t2g↓ of the Fe ion further. The experimental dual emission is confirmed by the calculated band gaps between band edges and between eg↓ and t2g↓ states (Fe 3d spin-down state). According to the analysis of density of states, the eg↓ and t2g↓ states are broad in the larger octahedral deformation, which suggests the experimental broadband emission of the Fe ion. The optical absorption of CsPbCl3 is improved and blue-shifted upon Fe doping, also in agreement with experiments. Our findings provide the understanding for designing high-performance doped perovskite optoelectronic devices. 

Insights into the Impact of Fe-Doped CsPbCl3 Perovskites on Stability and Luminescence: A First-Principles Investigation

As excellent optoelectronic materials, MAPbBr1Cl2 mixed halide perovskites are inevitably exposed to external illumination during their operation. Therefore, gaining a deep understanding of how the working performances of these materials are affected by such illumination is crucial. Herein, we synthesized a MAPbBr1Cl2 single crystal using a low-temperature-gradient crystallization method. The X-ray diffraction pattern of the MAPbBr1Cl2 single crystal confirmed its high crystallinity. Moreover, the MAPbBr1Cl2 single crystal exhibited excellent photoluminescence (PL) emission. Most interestingly, the PL peak of MAPbBr1Cl2 underwent a redshift from 504 to 517 nm with increasing excitation intensity. To explain this phenomenon, the power-dependent Raman spectrum was analyzed. As the laser intensity increased from 1 to 100%, the Raman mode softened from 324.27 to 320.82 cm–1. This indicated that laser irradiation weakens the bonding interactions and expands the MAPbBr1Cl2 single crystal, resulting in a redshift of the Raman peak, known as the photostriction effect. Furthermore, density functional theory calculations were conducted to simulate the MAPbBr1Cl2 supercells under normal and photostrictive conditions. The calculated band structures confirmed that light-induced lattice expansion reduces the band gap, contributing to the observed redshift of the PL peaks. Thus, when MAPbBr1Cl2 is irradiated by light under the working conditions, it exhibits a pronounced photostriction effect. This effect subsequently influences the electronic and luminescence properties of the material. This is a critical issue that needs to be addressed to develop reliable and sustainable perovskite optoelectronic devices. 

Investigations on the Strong Light-Changed Photoluminescence Performance and the Crystalline Structure of MAPbBr1Cl2 Mixed Halide Perovskites

Inorganic perovskites have received much attention due to their stability and high performance in luminescence, photoelectric conversion, and photodetection. However, perovskite optoelectronic devices prepared by the solution technique are still suffering from time-consuming and complex operations. In this paper, a single-crystal perovskite-based photodetector (PD) is prepared by very fast one-step deposition of synthesizing microplatelets (MPs) on the electrode directly. The saturated precursor is carefully optimized by adding appropriate antisolvent chlorobenzene (CB) to fabricate the MPs with their PL wavelength ranging from 418 to 600 nm. Furthermore, the PDs with a low dark current on order of nanoangstroms, high responsivity and detectivity of up to 10.7 A W-1 and 1012 Jones, respectively, and an ultrafast response rate featured by 278/287 μs (rise/decay time) are achieved. These all-inorganic perovskite PDs with a simple fabricating process and tunable detection wavelength meet the evolution tendency of PDs toward low cost and high performance, which is a high-profile strategy to realize high-performance perovskite PDs.

Ultrafast One-Step Deposition Route to Fabricate Single-Crystal CsPbX3 (X = Cl, Cl/Br, Br, and Br/I) Photodetectors.

To increase the efficiency of silicon heterojunction (SHJ) solar cells (SCs), it is paramount to enhance the utilization of sunlight by light management. In this study, the dependences of weighted reflectance and thus generation current (J G) for SHJ SCs on different anti-reflective structures are displayed by OPAL2 simulation tool. According to this, SiN x and SiO2 films are deposited on front of indium tin oxide (ITO) as multilayer anti-reflection coatings (ARCs). It is demonstrated experimentally that the photovoltaic performance of SHJ SCs can be significantly improved by multilayer ARCs. Especially, with 90/21/40 nm SiO2/SiN x /ITO anti-reflective layer structure, the reflectance of SHJ SC is reduced as low as 0.94%, and the current density is shown to be increased by 4.34% compared to the common SCs. This work shows a promising and cost-effective way to achieve higher light utilization and thus promotes photovoltaic characteristics for SHJ SCs.

Comparing single-, double- and triple-layer anti-reflection coatings for ultra-low reflectance in silicon heterojunction solar cells

Improving the performance of high-efficiency silicon heterojunction solar cells through the synergism of composite passivation with energy-band engineering

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Ultrafast One-Step Deposition Route to Fabricate Single-Crystal CsPbX3 (X = Cl, Cl/Br, Br, and Br/I) Photodetectors.

Comparing single-, double- and triple-layer anti-reflection coatings for ultra-low reflectance in silicon heterojunction solar cells

Improving the performance of high-efficiency silicon heterojunction solar cells through the synergism of composite passivation with energy-band engineering