Bert Vleeming
ASML Holding
9 Papers
369 Citations
Bert Vleeming is an academic researcher from ASML Holding. The author has contributed to research in topics: Photolithography & Multiple patterning. The author has an hindex of 8, co-authored 9 publications.
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Papers
Pitch doubling through dual-patterning lithography challenges in integration and litho budgets
Mircea Dusa,John Quaedackers,Olaf F. A. Larsen,Jeroen Meessen,Eddy van der Heijden,Gerald Dicker,Onno Wismans,Paul de Haas,Koen van Ingen Schenau,Jo Finders,Bert Vleeming,Geert Storms,Patrick Jaenen,Shaunee Cheng,Mireille Maenhoudt +14 more
TL;DR: A new CDU model was introduced to calculate double patterning budgets based on defining CD from its edges and pooling CD variance from two adjacent patterns within 2*Pitch distance, which achieved an experimental resolution of 32-nm 1/2 pitch on 1.2NA lithography system.
287
Application challenges with double patterning technology (DPT) beyond 45 nm
Jungchul Park,Stephen Hsu,Douglas Van Den Broeke,J. Fung Chen,Mircea Dusa,Robert John Socha,Jo Finders,Bert Vleeming,Anton van Oosten,Peter Nikolsky,Vincent Wiaux,Eric Hendrickx,Joost Bekaert,Geert Vandenberghe +13 more
- 20 Oct 2006
TL;DR: This paper addresses DPT application challenges with respect to both mask error factor (MEF) and 2D patterning and achieves overall k1 factor that exceeds the conventional Rayleigh resolution limit.
64
Double patterning lithography for 32 nm: critical dimensions uniformity and overlay control considerations
Jo Finders,Mircea Dusa,Bert Vleeming,Birgitt Hepp,Mireille Maenhoudt,Shaunee Cheng,Tom Vandeweyer +6 more
TL;DR: Experimental results confirmed the assumptions of CDU-overlay entanglement and existence of multiple CD populations of lines and spaces and confirmed the gain in improving statistical and spatial CD distribution to meet control levels required at 32-nm design rules.
58
Enabling the lithography roadmap: an immersion tool based on a Novel Stage Positioning System
Fred de Jong,Bert van der Pasch,Tom Castenmiller,Bert Vleeming,Richard Droste,Frank van de Mast +5 more
TL;DR: A new generation lithographic exposure tools was developed, with improved overlay and increased productivity, introducing new technologies paving the way to meet the future roadmap requirements.
36
ArF lithography options for 100-nm technologies
Geert Vandenberghe,Young-Chang Kim,Christie Delvaux,Kevin Lucas,Sang-Jun Choi,Monique Ercken,Kurt G. Ronse,Bert Vleeming +7 more
- 14 Sep 2001
TL;DR: In this article, the authors give an overview of the status of 193nm ArF lithography towards 100nm patterning of memory and logic front-end features, and explore the various enhancement techniques needed.
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