With the continuous development and progress of science and technology, the third-generation semiconductor power devices (SPDs) represented by SiC MOSFETs have become key devices in the field of power electronics due to their merits of excellent power density, high-temperature operating capability, high-frequency characteristics, and high-energy efficiency. However, when these devices are used in radiation environments like aviation and aerospace, significant challenges are posed to their reliability and performance. This article reviews the research on the core issues of radiation damage of SiC MOSFET power devices. It presents the research progress on the degradation mechanism, radiation damage mechanism, and radiation hardening technology of SiC MOSFET power devices under irradiation conditions of different types such as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\gamma$</tex-math> </inline-formula> -rays, electrons, protons, neutrons, and heavy ions. Hopefully, this review can provide an in-depth understanding of the reliability and stability of SiC MOSFET power devices in some special applications. 

Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions

Effects of 5 MeV proton irradiation on 4H-SiC lateral pMOSFETs on-state characteristics

The electrical behaviour of irradiated and post-irradiation annealed nMOSFETs with an implanted p-type body and having a N2O oxynitrided gate oxide is analysed in this work. This study reveals the existence of a “threshold fluence” which might change the predominant SiO2/SiC interface charge trapping type from donors to acceptors at a given energy. The irradiation fluence and energy limit that guaranty a normal or improved operation of the MOSFETs are also given.

Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness

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Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness