A telecommunications cabinet includes a cabinet housing; a fiber optic splitter; a plurality of spools disposed on a cable management surface; a panel oriented at a fixed angle relative to the access opening so that the panel extends laterally and rearwardly between the access opening and the cable management surface; and a plurality of adapters disposed on the panel.

Telecommunications connection cabinet

Organic photodetectors have promising applications in low-cost imaging, health monitoring and near-infrared sensing. Recent research on organic photodetectors based on donor–acceptor systems has resulted in narrow-band, flexible and biocompatible devices, of which the best reach external photovoltaic quantum efficiencies approaching 100%. However, the high noise spectral density of these devices limits their specific detectivity to around 1013 Jones in the visible and several orders of magnitude lower in the near-infrared, severely reducing performance. Here, we show that the shot noise, proportional to the dark current, dominates the noise spectral density, demanding a comprehensive understanding of the dark current. We demonstrate that, in addition to the intrinsic saturation current generated via charge-transfer states, dark current contains a major contribution from trap-assisted generated charges and decreases systematically with decreasing concentration of traps. By modeling the dark current of several donor–acceptor systems, we reveal the interplay between traps and charge-transfer states as source of dark current and show that traps dominate the generation processes, thus being the main limiting factor of organic photodetectors detectivity. The suppression of dark current in organic photodetectors (OPDs) is important for maximizing the performance of the devices. Here, the authors report the relationship between the high dark saturation current and the presence of mid-gap trap states in OPDs with a donor–acceptor structure.

/pdf/reverse-dark-current-in-organic-photodetectors-and-the-major-4wjgah2tay.pdf

Reverse dark current in organic photodetectors and the major role of traps as source of noise.

Higher fullerenes (≥C76) were selectively extracted from a fullerene mixture obtained from a combustion-based industrial production source by cyclic dimers of β-unsubstituted porphyrin zinc complexes 2C5−2C7 with C5−C7 alkylene spacers as host molecules. Results of single extraction of the fullerene mixture with 2C5−2C7 together with a β-substituted analogue of 2C6 (1C6) and spectroscopic titration of 2C6 and 1C6 with C60, C70, and C96 indicated that the host selectivity toward higher fullerenes is much dependent on the structure of the porphyrin units and the size of the host cavity. Sequential three-stage extraction of the fullerene mixture with the best-behaved 2C6 resulted in considerable enrichment in very rare fullerenes C102−C110 (<0.1 abs %) up to 82 abs % (C76−C114, 99 abs %) (356 nm) of total fullerenes.

Selective extraction of higher fullerenes using cyclic dimers of zinc porphyrins.

Angular distributions of sputtered atoms from SiO2 and LiF single crystals were measured under the irradiation of 1 MeV/u swift heavy ions. In contrast to the almost isotropic distribution of SiO2, an additional jetlike component was observed for LiF. The total sputtering yield of SiO2 ( approximately 10(2) atoms/ion) can be reproduced by an extended inelastic thermal spike model, whereas the huge yield of LiF ( approximately 10(4) atoms/ion) needs a substantial decrease of the sublimation energy to be described by the model.

Jetlike component in sputtering of LiF induced by swift heavy ions.

Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review. 

Narrowband organic photodetectors – towards miniaturized, spectroscopic sensing

Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM) These conducting tracks are of possible use in field emission applications

Electrically conducting ion tracks in diamond-like carbon films for field emission

The invention relates to quantum points showing quantization of the electrical properties thereof, which can be used in an advantageous manner especially in nanoelectronics. However, quantum points are very complicated to accurately design, produce, and incorporate, resulting in an insufficient success rate. The inventive quantum point (QP) is characterized by an embedded structure configured as a cylindrical area having a graphite-type structure (GLC) within an electrically insulating carbon layer (DLCQP) which is provided with a diamond-type structure and is arranged between two electrically insulating layers (IL1, IL2) that maintain said property also following ion passage. Hence, a quantum point that is geometrically and positionally defined with precision is disclosed for the first time in DLC material which is very interesting for nanoelectronics. Said quantum point can have dimensions of less than 8 nm and is particularly suitable for producing a single-electron transistor (SET). Contacting can be done in a simple manner by means of integrated nanowires. The inventive quantum point is easy to produce by irradiating a stack of layers (LS) with an ion beam (IB). The quantum point (QP) and the nanowires (NW) are created in the ion track (IT) by converting the non-conductive carbon (DLC) having a diamond-type structure into conductive carbon (GLC) having a graphite-type structure.

Quantum point made of electrically conducting carbon, production method, and application

Phthalocyanine/C60 heterostructure organic solar cells were fabricated by evaporating highly purified materials under high vacuum conditions. 1%-2.5% external power conversion efficiencies were obtained with ITO / PEDOT:PSS / 300 angstrom ZnPc / 300 angstrom C60 / 170 angstrom BCP/Al layering. The role of the buffer layers at the interfaces to the electrodes and their influence on the I-V characteristics was studied. Degradation of the organic cell caused by air and light exposure was investigated. Atmospheric oxygen diffusing into C60 films was identified as external source of degradation. A second source was spotted in the interior of the cell.

Preparation and investigation of phthalocyanine/C60 solar cells

Solid matter quantum computers with local control accesses are based on the fixed arrangement of spins as quantum mechanical information units. Local control accesses allow the dynamic modification of the resonance frequency of individual spins and the interlinking of spins for the individual addressing of spins in order to carry out computer operations. Known local control accesses perform poorly and are difficult to produce. The invention uses the electron spins of enclosure atoms in endohedral fullerenes, which are electromagnetically interlinked (J) by a magnetic dipole-dipole interaction (105). The resonance frequency (φ) is regulated by a controlled electron transfer to or from the cage of the endohedral fullerenes (104) with an adjustable residence time. The electromagnetic link (J) is regulated by a controlled angular modification ξ(108) between the orientation of the external magnetic field (B) (109) and the binding vector (r) (107) of neighbouring fullerenes (104). Electron spin quantum computers envisage matrix-type arrangements of endohedral fullerenes (104) with different resonance frequencies (φ). The addressing control accesses can, in particular, be configured as large-surface electrodes (103) and the linking control accesses can be achieved mechanically, optically or chemically.

Method and assembly for processing quantum-mechanical information units

On the production of higher fullerenes with doped electrodes

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