Benoît Marchand
University of Helsinki
7 Papers
8 Citations
Benoît Marchand is an academic researcher from University of Helsinki. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 5, co-authored 7 publications.
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Papers
Atomic Layer Deposition of AlF3 Thin Films Using Halide Precursors
Miia Mäntymäki,Mikko Heikkilä,Esa Puukilainen,Kenichiro Mizohata,Benoît Marchand,Jyrki Räisänen,Mikko Ritala,Markku Leskelä +7 more
TL;DR: In this article, a halide-halide exchange reaction with AlCl3 and TiF4 as precursors was used to make use of a new atomic layer deposition process for AlF3.
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Magnetic Properties of Polycrystalline Bismuth Ferrite Thin Films Grown by Atomic Layer Deposition.
Pasi Jalkanen,Vladimir Tuboltsev,Benoît Marchand,Alexander Savin,Majunath Puttaswamy,Marko Vehkamäki,Kenichiro Mizohata,Marianna Kemell,Timo Hatanpää,Valenti Rogozin,Jyrki Räisänen,Mikko Ritala,Markku Leskelä +12 more
TL;DR: In this paper, the atomic layer deposition (ALD) method was applied to grow thin polycrystalline BiFeO3 (BFO) films on Pt/SiO2/Si substrates.
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Electric and Magnetic Properties of ALD-Grown BiFeO3 Films
Benoît Marchand,Pasi Jalkanen,Vladimir Tuboltsev,Marko Vehkamäki,Manjunath Puttaswamy,Marianna Kemell,Kenichiro Mizohata,Timo Hatanpää,Alexander Savin,Jyrki Räisänen,Mikko Ritala,Markku Leskelä +11 more
TL;DR: The magnetization and electric polarization in thin bismuth ferrite films (BFO) have been under extensive study for high technological potential of single-phase multiferroic materials as mentioned in this paper.
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Low-temperature atomic layer deposition of copper(II) oxide thin films
Tomi Iivonen,Jani Hämäläinen,Benoît Marchand,Kenichiro Mizohata,Miika Mattinen,Georgi Popov,Jiyeon Kim,Roland A. Fischer,Markku Leskelä +8 more
TL;DR: In this article, copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80-140°C.
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Proton induced gamma-ray production cross sections and thick-target yields for boron, nitrogen and silicon
TL;DR: In this article, the excitation functions for the reactions 14N(p,p′γ)14N, 28Si(p p,p πγ)28Si and 29Si(m,p p′γ)-29Si were measured at an angle of 55° by bombarding a thin Si3N4 target with protons in the energy range of 3.6-6.9 MeV.
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