Benjamin Willsch
University of Tübingen
6 Papers
Benjamin Willsch is an academic researcher from University of Tübingen. The author has contributed to research in topics: Contact resistance & Equivalent series resistance. The author has an hindex of 5, co-authored 6 publications.
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Papers
Contact formation of front side metallization in p-type, single crystalline Si solar cells: Microstructure, temperature dependent series resistance and percolation model
TL;DR: In this article, screen printed front side contacts were investigated in single-crystalline (planar and textured) Si solar cells with n-type emitters, yielding maximum efficiencies of 18.0%.
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Front Side Metallization of n - and p -Type, High-Efficiency, Single-Crystalline Si Solar Cells: Assessing the Temperature-Dependent Series Resistance
TL;DR: In this article, the series resistance of high-quality, single crystalline p-type and n-type solar cells was measured in a temperature range between 80 K and room temperature.
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Combined Microstructural and Electrical Characterization of Metallization Layers in Industrial Solar Cells
Praveen Kumar,Benjamin Willsch,M. Dürrschnabel,Zainul Aabdin,Rene Hoenig,N. Peranio,Florian Clement,Daniel Biro,Oliver Eibl +8 more
TL;DR: The microstructure of the contacts was analyzed in plan-view and cross-section by combined scanning and analytical transmission electron microscopy as mentioned in this paper, and it was concluded that pyramidal Ag crystallites are not necessary for contacts yielding low contact resistance.
Direct imaging of dopant distributions across the Si-metallization interfaces in solar cells: Correlative nano-analytics by electron microscopy and NanoSIMS
Praveen Kumar,Michael Pfeffer,Benjamin Willsch,Oliver Eibl,Lluís Yedra,Santhana Eswara,Jean-Nicolas Audinot,Tom Wirtz +7 more
TL;DR: In this article, the authors harness the high-resolution (100nm) high-sensitivity chemical imaging with Nano Secondary Ion Mass Spectrometry (NanoSIMS) and correlate with microstructural and electrical properties to elucidate the factors limiting the overall cell efficiencies.
Series and contact resistance measurements between 80 K and room temperature for industrial solar cells
TL;DR: In this article, the authors used planar cells for electrical measurements in an optical cryostat: V OC, dark current and I-V curves under illumination were acquired Care was taken to provide optimum contacting of the cells and reproducible results could be obtained Pastes of two different suppliers were processed and yielded significantly different microstructure and electrical properties.