We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

ELECTROLUMINESCENT devices have been developed recently that are based on new materials such as porous silicon1 and semiconducting polymers2,3. By taking advantage of developments in the preparation and characterization of direct-gap semiconductor nanocrystals4–6, and of electroluminescent polymers7, we have now constructed a hybrid organic/inorganic electroluminescent device. Light emission arises from the recombination of holes injected into a layer of semiconducting p-paraphenylene vinylene (PPV)8–10 with electrons injected into a multilayer film of cadmium selenide nanocrystals. Close matching of the emitting layer of nanocrystals with the work function of the metal contact leads to an operating voltage11 of only 4V. At low voltages emission from the CdSe layer occurs. Because of the quantum size effect19–24 the colour of this emission can be varied from red to yellow by changing the nanocrystal size. At higher voltages green emission from the polymer layer predominates. Thus this device has a degree of voltage tunability of colour.

Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer

The invention concerns a quantum cascade laser comprising in particular a gain region (14) consisting of several layers (20) each including: alternating strata of a first type (28) defining each an AllnAs quantum barrier and strata of a second type (28) defining each an InGaAs quantum barrier, and injection barriers (22), interposed between two of the layers (20). The layers of the gain region (14) form each an active zone extending from one to the other of the injection barriers (22) adjacent thereto. The strata (26, 28) are dimensioned such that: each of the wells comprises, in the presence of an electric field, at least a first upper subband, a second median subband, and a third lower subband, and the probability of an electron being present in the first subband is highest in the proximity of one of the adjacent injection barriers, in the second subband in the median part of the zone and in the third subband in the proximity of the other adjacent barriers. The laser is formed by a succession of active zones and injection barriers, without interposition of a relaxation zone.

https://science.sciencemag.org/content/sci/264/5158/553.full.pdf

Quantum cascade laser

We review the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−xMnxSe, Hg1−xMnxTe). Crystallographic properties are discussed first, with emphasis on the common structural features which these materials have as a result of tetrahedral bonding. We then describe the band structure of the AII1−xMnxBVI alloys in the absence of an external magnetic field, stressing the close relationship of the sp electron bands in these materials to the band structure of the nonmagnetic AIIBVI ‘‘parent’’ semiconductors. In addition, the characteristics of the narrow (nearly localized) band arising from the half‐filled Mn 3d5 shells are described, along with their profound effect on the optical properties of DMS. We then describe our present understanding of the magnetic properties of the AII1−xMnxBVI alloys. In particular, we discuss the mechanism of the Mn++‐Mn++ exchange, which underlies the magnetism of these materials; we present an analytic formulation for the magnetic susc...

Diluted magnetic semiconductors

ELECTROLUMINESCENT devices have been developed recently that are based on new materials such as porous silicon' and semiconducting polymers 2,3 . By taking advantage of developments in the preparation and characterization of direct-gap semiconductor nanocrystals 4-6 , and of electroluminescent polymers7, we have now constructed a hybrid organic/inorganic electroluminescent device. Light emission arises from the recombination of holes injected into a layer of semiconducting p-paraphenylene vinylene (PPV) 2-10 with electrons injected into a multilayer film of cadmium selenide nanocrystals. Close matching of the emitting layer of nanocrystals with the work function of the metal contact leads to an operating voltage" of only 4 V. At low voltages emission from the CdSe layer occurs. Because of the quantum size effect 19-24 the colour of this emission can be varied from red to yellow by changing the nanocrystal size. At higher voltages green emission from the polymer layer predominates. Thus this device has a degree of voltage tunability of colour.

Experimental Investigations of the Electronic Band Structure of Solids

Infrared magneto-absorption has been investigated in thin samples (\ensuremath{\sim}10 microns) of germanium, indium arsenide, and indium antimonide in magnetic fields up to 37 kilogauss. At photon energies greater than the direct transition energy gap in germanium and also greater than the energy gaps in indium arsenide and indium antimonide, the magneto-absorption exhibited oscillatory behavior. This is associated with interband transitions between quantized Landau levels of the valence and conduction bands. By extrapolating a plot of the photon energies of the transmission minima as a function of magnetic field to zero field, we obtained accurate determinations of the energy gaps. For the direct transition in germanium, ${E}_{g}=0.803\ifmmode\pm\else\textpm\fi{}0.001$ ev at \ensuremath{\sim}298\ifmmode^\circ\else\textdegree\fi{}K, 0.890\ifmmode\pm\else\textpm\fi{}0.001 ev at \ensuremath{\sim}77\ifmmode^\circ\else\textdegree\fi{}K, and 0.897\ifmmode\pm\else\textpm\fi{}0.001 ev at \ensuremath{\sim}4\ifmmode^\circ\else\textdegree\fi{}K. In indium antimonide, ${E}_{g}=0.180\ifmmode\pm\else\textpm\fi{}0.002$ ev at \ensuremath{\sim}298\ifmmode^\circ\else\textdegree\fi{}K, and in indium arsenide, the result was 0.360\ifmmode\pm\else\textpm\fi{}0.002 ev at \ensuremath{\sim}298\ifmmode^\circ\else\textdegree\fi{}K. From the accurate determination of the energy gap made possible by these experiments, it is apparent that there is considerable absorption below the energy gap, probably due to transitions involving both photons and optical phonons. Utilizing the theory of Luttinger and Kohn, effective masses were evaluated from the higher quantum transitions in germanium to give values of the conduction band electron mass at $k=0$ of $(0.036\ifmmode\pm\else\textpm\fi{}0.002){m}_{0}$ at room temperature, and $(0.043\ifmmode\pm\else\textpm\fi{}0.002){m}_{0}$ and $(0.041\ifmmode\pm\else\textpm\fi{}0.002){m}_{0}$ at \ensuremath{\sim}77\ifmmode^\circ\else\textdegree\fi{}K and \ensuremath{\sim}4\ifmmode^\circ\else\textdegree\fi{}K, respectively, which is consistent with the corresponding change in energy gap. For indium arsenide, the conduction band electron mass was found to be approximately $0.03{m}_{0}$. For indium antimonide, a value for the effective mass in the conduction band of $\ensuremath{\sim}0.014{m}_{0}$, consistent with the cyclotron resonance results, was obtained by assuming that in this case the magnetic levels in the conduction band are appreciably split by spin-orbit interaction. The anisotropy of the magneto-absorption effect was measured for germanium and indium antimonide. For germanium, the anisotropy agreed with predictions from theory and the results of microwave cyclotron resonance. For indium antimonide, the anisotropy was very small for the first two minima.

Oscillatory Magneto-Absorption in Semiconductors

The room temperature pulsed magnetic field infrared cyclotron resonance data of Keyes and co-workers in indium antimonide is interpreted using the k\ifmmode\cdot\else\textperiodcentered\fi{}p perturbation technique of Kane, which is extended to include the effects of a dc magnetic field. The energy levels are calculated for a carrier in a band in the presence of a magnetic field and which is interacting with neighboring bands. From the energy expression, the variation of the apparent effective mass with magnetic field is calculated. The theory is consistent with the room temperature measurements of Keyes et al., as well as with other cyclotron resonance results obtained at low temperatures.

Cyclotron Resonance in Indium Antimonide at High Magnetic Fields

Selection rules are obtained for harmonics of the cyclotron resonance transition in InSb, such as $2{\ensuremath{\omega}}_{c}(\ensuremath{\Delta}n=2,\ensuremath{\Delta}{m}_{s}=0)$, $3{\ensuremath{\omega}}_{c}(\ensuremath{\Delta}n=3,\ensuremath{\Delta}{m}_{s}=0)$, etc., and spin-shifted harmonics such as $2{\ensuremath{\omega}}_{c}+{\ensuremath{\omega}}_{s}(\ensuremath{\Delta}n=2,\ensuremath{\Delta}{m}_{s}=\ensuremath{-}1)$, etc., where $\ensuremath{\Delta}n$ and $\ensuremath{\Delta}{m}_{s}$ are the changes in the Landau quantum number and the $z$ component of the spin angular momentum. These transitions are induced by warping and inversion-asymmetry effects. The complete $\stackrel{\ensuremath{\rightarrow}}{\mathrm{k}}\ifmmode\cdot\else\textperiodcentered\fi{}\stackrel{\ensuremath{\rightarrow}}{\mathrm{p}}$ Hamiltonian is obtained to second order in $\stackrel{\ensuremath{\rightarrow}}{\mathrm{k}}$ and to first order in the applied magnetic field $\stackrel{\ensuremath{\rightarrow}}{\mathrm{H}}$ for the coupled conduction band (${\ensuremath{\Gamma}}_{6}$), light- and heavy-hole valence bands (${\ensuremath{\Gamma}}_{8}$) and split-off valence band (${\ensuremath{\Gamma}}_{7}$). This Hamiltonian treats the interactions with higher bands as second-order perturbations, and includes terms proportional to three new parameters which arise from the spin-orbit splitting of these higher bands. A group-theoretical analysis is carried out for $\stackrel{\ensuremath{\rightarrow}}{\mathrm{H}}$ in the (1\ifmmode\bar\else\textasciimacron\fi{}10) plane including ${k}_{H}\ensuremath{\ne}0$, ${k}_{H}$ being the momentum component along the direction of the applied magnetic field. The selection rules for the intra-conduction-band transition $2{\ensuremath{\omega}}_{c}$, $2{\ensuremath{\omega}}_{c}+{\ensuremath{\omega}}_{s}$, and $3{\ensuremath{\omega}}_{c}$ are in agreement with experiment but with one important exception: that a strong $2{\ensuremath{\omega}}_{c}$ transition observed for $\stackrel{\ensuremath{\rightarrow}}{\mathrm{H}}\ensuremath{\parallel}[001]$ in the polarization $\stackrel{\ensuremath{\rightarrow}}{\mathrm{E}}\ensuremath{\perp}\stackrel{\ensuremath{\rightarrow}}{\mathrm{H}}$ is not predicted by the above group-theoretical analysis.

Warping- and inversion-asymmetry-induced cyclotron-harmonic transitions in InSb

INFRARED InSb LASER DIODE IN HIGH MAGNETIC FIELDS

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