Ben S. Gorospe
Northrop Grumman Corporation
18 Papers
143 Citations
Ben S. Gorospe is an academic researcher from Northrop Grumman Corporation. The author has contributed to research in topics: Amplifier & Noise figure. The author has an hindex of 10, co-authored 17 publications.
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Papers
Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs
William R. Deal,Kevin M. K. H. Leong,Vesna Radisic,Stephen Sarkozy,Ben S. Gorospe,J. Lee,Po-Hsin Liu,W. Yoshida,Joe Zhou,M. Lange,Richard Lai,Xiaobing Mei +11 more
TL;DR: In this paper, a high fMAX InP HEMT transistors in a 5-stage coplanar waveguide integrated circuit were used for low noise amplification at 0.67 GHz.
116
Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors
William R. Deal,Xiaobing Mei,Vesna Radisic,Kevin M. K. H. Leong,Stephen Sarkozy,Ben S. Gorospe,J. Lee,Po-Hsin Liu,W. Yoshida,Joe Zhou,M. Lange,J. Uyeda,Richard Lai +12 more
TL;DR: In this article, the authors present an amplifier module operating at a frequency of 0.48 THz, which represents almost a 50% increase in solid-state amplifier operating frequency compared to prior state of the art, and is the highest reported amplifier to date.
114
A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors
Kevin M. K. H. Leong,Xiaobing Mei,W. Yoshida,Po-Hsin Liu,Zeyang Zhou,M.D. Lange,L.J. Lee,Jose G. Padilla,Alexis Zamora,Ben S. Gorospe,Khanh Nguyen,William R. Deal +11 more
TL;DR: In this article, the InP HEMT amplifier achieves a noise figure as low as 11.1 dB with an associated gain of 13.6 dB at 0.85 THz.
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850 GHz Receiver and Transmitter Front-Ends Using InP HEMT
Kevin M. K. H. Leong,Xiaobing Mei,Wayne H. Yoshida,Alexis Zamora,Jose G. Padilla,Ben S. Gorospe,Khanh Nguyen,William R. Deal +7 more
TL;DR: In this paper, the 850 GHz band receiver and transmitter front-ends using a new generation of 25-nm indium phosphide high electron mobility transistor are reported for high maximum frequency of oscillation f MAX and cutoff frequency fT.
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A 670 GHz Low Noise Amplifier with <10 dB Packaged Noise Figure
William R. Deal,Alexis Zamora,Kevin M. K. H. Leong,Po-Hsin Liu,W. Yoshida,Joe Zhou,M. Lange,Ben S. Gorospe,Khanh Nguyen,X.B. Mei +9 more
TL;DR: In this article, a low noise Amplifier (LNA) operating at 670 GHz is presented, which shows approximately 16 dB associated gain in package with a noise figure ranging from 9.4-9.9 dB across a 15 GHz bandwidth.
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