Electrically–transduced sensors, with their simplicity and compatibility with standard electronic technologies, produce signals that can be efficiently acquired, processed, stored, and analyzed. Two dimensional (2D) nanomaterials, including graphene, phosphorene (BP), transition metal dichalcogenides (TMDCs), and others, have proven to be attractive for the fabrication of high–performance electrically-transduced chemical sensors due to their remarkable electronic and physical properties originating from their 2D structure. This review highlights the advances in electrically-transduced chemical sensing that rely on 2D materials. The structural components of such sensors are described, and the underlying operating principles for different types of architectures are discussed. The structural features, electronic properties, and surface chemistry of 2D nanostructures that dictate their sensing performance are reviewed. Key advances in the application of 2D materials, from both a historical and analytical pers...

Electrically-Transduced Chemical Sensors Based on Two-Dimensional Nanomaterials

Recent advance and prospectives of electrocatalysts based on transition metal selenides for efficient water splitting

Photon attenuation coefficients of concrete includes barite in different rate

Nanoparticles exist far from the equilibrium state due to their high surface energy. Nanoparticles are therefore extremely unstable and easily change themselves or react with active substances to reach a relatively stable state in some cases. This causes desired changes or undesired changes to nanoparticles and thus makes them exhibit a high reactivity and a poor stability. Such dual nature (poor stability and high reactivity) of nanoparticles may result in both negative and positive effects for nanoparticle processing. However, the existing studies mainly focus on the high reactivity of nanoparticles, whereas their poor stability has been neglected or considered inconsequential. In fact, in some cases the unstable process, which is derived from the poor stability of nanoparticles, offers an opportunity to design and fabricate unique nanomaterials, such as by chemically transforming the “captured” intermediate nanostructures during a changing process, assembling destabilized nanoparticles into larger orde...

Stability and Reactivity: Positive and Negative Aspects for Nanoparticle Processing.

Attenuation coefficients and exposure buildup factor of some rocks for gamma ray shielding applications

Undoped indium selenide (InSe) and Er doped InSe single crystals were grown by Bridgman–Stockberger method. The InSe crystals both undoped and doped Er had no cracks or voids on the surface. No polishing or cleaning treatments were carried out on the cleaved faces of these samples because of the natural mirror-like cleavage faces. The absorption measurements were carried out in the temperature range 10–320 K and the external electric field effect on the absorption measurements is investigated. The absorption edge shifted towards to the longer wavelengths under an electric field as 6 kV/cm. Using the electric field shifting, effective mass values are calculated.

Effective mass calculation for InSe, InSe:Er crystals

The organic methyl green (MG) has been investigated for the first time for its electronic applications. In order to see the effect of organic MG layer on electrical characteristics of Al/p-Si diode, Al/MG/p-Si structure has been fabricated by inexpensive and simple “drop coating” method. The current–voltage (I–V) and capacitance–conductance–voltage (C–G–V) characteristics of Al/SiO2/p-Si and Al/MG/p-Si structures have been investigated. The parameters such as ideality factor (n), barrier height (
 $$ \Phi_{b} $$
 ), series and shunt resistance, and the density of interface states have been investigated using current–voltage measurements, in dark and under illumination conditions at room temperature. The n and $$ \Phi_{b} $$
 values of 1.56 and 0.81 eV for Al/SiO2/p-Si and 1.36 and 0.80 eV for Al/MG/p-Si are calculated from the forward bias I–V characteristics. The $$ \Phi_{b} $$
 value of the Al/SiO2/p-Si structure at room temperature is larger than that of conventional Al/p-Si diode. It is seen that the n value of 1.36 calculated for the Al/MG/p-Si structure is lower than most of the metal/organic compound/inorganic semiconductor devices.

Current–Voltage and Capacitance–Conductance–Voltage Characteristics of Al/SiO 2 /p-Si and Al/Methyl Green (MG)/p-Si Structures

Large TlInSe 2 single crystals are grown by the Bridgman-Stockbarger method, starting from stoichiometric melts. Current-voltage (I-V) characteristics of symmetric In/p-TIInSe 2 /In structures exhibit two distinct regions: an ohmic region at low current densities and a non-linear region (S-shaped) having negative differential resistance (NDR) at moderate and higher current densities. An electrothermal model is used for the explanation of this non-linear behaviour. The non-linear behaviour of the I-V curves is studied at different ambient temperatures in the 100 to 340 K region. The sample temperature and the threshold voltage of the NDR region are examined as a function of current density and ambient temperature, respectively. The electrothermal model is quite satisfactory for the explanation of this process.

Electrothermal investigation of the switching phenomena in p-type TlInSe2 single crystals

Silicon-doping influence on the crystalline, surface and optical features of cadmium oxide films deposited by sol-gel spin route

p-TlGaSe2 and Tl(1-x), GaPrxSe2 single crystals were grown by the modified Bridgman-Stockbarger method. The absorption measurements were carried out in p-TlGaSe2 and TI(1-x)GaPrxSe2 samples in temperature range 10–320 K with a step of 10 K. The phonon energies calculated for p-TlGaSe2, p-TI0.999GaPr0.001 Se2 and p-Tl0.995GaPr0.005Se2 are 34.0 meV, 30.0 meV and 35.0 meV, respectively. At 300 K, the direct band gaps of p-TlGaSe2, p-Tl0.999GaPr0.001Se2 and p-Tl0.995GaPr0.005Se2 are 2.165 eV, 2.164 eV and 2.155 eV and the indirect band gaps are 2.110 eV, 2.122 eV and 2.128 eV, respectively. There is an abrupt change in the direct energy peak for p-TlGaSe2 in the temperature ranges 230–250 K, for p-Tl0.999GaPr0.001Se2 and p-Tl0.995GaPr0.005Se2 in the temperature ranges 195–215 K. On the other hand, indirect energy peaks for p-Tl0.999GaPr0.001Se2 and Tl0.995GaPr0.005Se2 are in the temperature ranges 215–235 K.

The Optical Absorption Edge of p-Type Tl(1-x)GaPrxSe2 and TlGaSe2

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