Bart Laenens
ASML Holding
33 Papers
209 Citations
Bart Laenens is an academic researcher from ASML Holding. The author has contributed to research in topics: Process window & Magnetization. The author has an hindex of 12, co-authored 33 publications. Previous affiliations of Bart Laenens include IMEC & Katholieke Universiteit Leuven.
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Papers
Performance of FlexRay, a fully programmable Illumination system for generation of Freeform Sources on high NA immersion systems
Melchior Mulder,Andre Engelen,Oscar Noordman,Gert Streutker,Bert van Drieenhuizen,Cas Johannes Petrus Maria Van Nuenen,Wilfred Endendijk,J. Verbeeck,Wim Bouman,Anita Bouma,Robert Kazinczi,Robert John Socha,Dirk Jürgens,Joerg Zimmermann,Bastian Trauter,Joost Bekaert,Bart Laenens,Daniel Corliss,Greg McIntyre +18 more
TL;DR: The principle and performance of FlexRay, a fully programmable illuminator for high NA immersion systems that can be generated on demand, by manipulating an array of mirrors instead of the traditional way of inserting optical elements and changing lens positions are described.
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Joint optimization of layout and litho for SRAM and logic towards the 20nm node using 193i
TL;DR: It will show that layout restrictions are really becoming mandatory for the technology nodes studied in this paper, using 193 nm immersion lithography for SRAM and Logic for planar technology nodes between 28 nm and 20 nm.
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Stabilization of antiferromagnetic order in FeO nanolayers.
Sebastien Couet,Kai Schlage,Rudolf Rüffer,Svetoslav Stankov,Th. Diederich,Bart Laenens,Ralf Röhlsberger +6 more
TL;DR: The presented results evidence the role that the ferromagnetic surrounding plays in modifying the magnetic state of ultrathin AFM layers.
Freeform illumination sources: An experimental study of source-mask optimization for 22 nm SRAM cells
Joost Bekaert,Bart Laenens,Staf Verhaegen,L. Van Look,Darko Trivkovic,Frederic Lazzarino,Geert Vandenberghe,P. van Adrichem,Robert John Socha,Stanislas Baron,Min-Chun Tsai,K. Ning,Stephen Hsu,Hua-yu Liu,Melchior Mulder,Anita Bouma,E. van der Heijden,Orion Mouraille,Kram Koen Schreel,Jozef Maria Finders,Mircea Dusa,Joerg Zimmermann,Paul Gräupner,J. T. Neumann,Christoph Hennerkes +24 more
TL;DR: In this article, the benefit of freeform over traditional illumination is evaluated by applying source mask co-optimization for an aggressive use case, and wafer-based verification, for a 22 nm node SRAM of 0.099 μm² and 0.078 μm 2 ======bit cell area.
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Litho and patterning challenges for memory and logic applications at the 22-nm node
Jo Finders,Mircea Dusa,Peter Nikolsky,Youri van Dommelen,Robert Douglas Watso,Tom Vandeweyer,Joost Beckaert,Bart Laenens,Lieve Van Look +8 more
TL;DR: The litho and patterning challenges at the 22nm node are looked into for memory and logic applications driven by the difference in device layout and common challenges are found for periphery of memory and random logic SRAM cells.
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