Abstract Memristors are one of the emerging technologies that can potentially replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. Over the past few years, research and development mostly focused on revolutionizing the metal oxide materials, which are used as core components of the popular metal-insulator-metal memristors owing to their highly recognized resistive switching behavior. This paper outlines the recent advancements and characteristics of such memristive devices, with a special focus on (i) their established resistive switching mechanisms and (ii) the key challenges associated with their fabrication processes including the impeding criteria of material adaptation for the electrode, capping, and insulator component layers. Potential applications and an outlook into future development of metal oxide memristive devices are also outlined.

/pdf/state-of-the-art-of-metal-oxide-memristor-devices-2zohemrfvm.pdf

State of the art of metal oxide memristor devices

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

m';tNO; Thisworkpresents detailed characterization andmodeling of 104 - experimentaldata thereset operation inresistive-switching memories basedon _ Powder file metaloxides. Ourexperimental results confirm previous ob- ' 10 servations that reset iscontrolled byJoule heating, providing an 102~~~~~~~~~~~~~~~~~~~~~~i

Conductive-filament switching analysis andself-accelerated thermal dissolution modelforreset inNiO-based RRAM

In this work, a study has been performed to understand the gradual reset in Al2O3 resistive random-access memory (RRAM). Concentration of vacancies created during the forming or set operation is found to play a major role in the reset mechanism. The reset was observed to be gradual when a significantly higher number of vacancies are created in the dielectric during the set event. The vacancy concentration inside the dielectric was increased using a multi-step forming method which resulted in a diffusion-dominated gradual filament dissolution during the reset in Al2O3 RRAM. The gradual dissolution of the filament allows one to control the conductance of the dielectric during the reset. RRAM devices with gradual reset show excellent endurance and retention for multi-bit storage. Finally, the conductance modulation characteristics realizing synaptic learning are also confirmed in the RRAM.

/pdf/understanding-the-gradual-reset-in-pt-al2o3-ni-rram-for-4p15yw8dwh.pdf

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell. The method forms a bottom electrode over a bottom electrode via. The method further forms a variable resistive dielectric layer over the bottom electrode, and a top electrode over the variable resistive dielectric layer. The method forms a top electrode via vertically extending outward from an upper surface of the top electrode at a position centered along a first axis that is laterally offset from a second axis centered upon the bottom electrode via. The top electrode via has a smaller width than the top electrode. Laterally offsetting the top electrode via from the bottom electrode via provides the top electrode via with good contact resistance.

Rram cell structure with laterally offset beva/teva

In this letter, we examine the role of the Ti capping layer in HfO
 x
-based resistive random access memory (RRAM) devices on the memory performance. It is found that with a thicker Ti capping layer, the fresh device initial leakage current increases and as a result, the forming voltage decreases. In addition, with a thin Ti layer of <;3 nm (on top of 8-nm HfO
 x
), there is no resistive switching, while by inserting a thicker Ti layer of 10 nm, the memory window enlarges to about two orders. Very good uniformity has also been observed in thick Ti capping devices, demonstrating the effectiveness in RRAM device engineering. It is believed that the Ti layer serves as an oxygen reservoir, by extracting oxygen during device formation and electrical forming process and facilitates resistive switching thereafter.

The Role of Ti Capping Layer in HfO x -Based RRAM Devices

ALD HfO2 Based RRAM with Ti Capping

Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief. Keywords—HfOx, resistive switching, RRAM.

Switching Behaviors of TiN/HfOx/Pt Based RRAM

In this letter, a novel and fully CMOS compatible RRAM stack— $({\rm TiN\hbox{-}TaO}_{x}\hbox{-}{\rm Hf\hbox{-}HfO}_{y}\hbox{-}{\rm TiN})$ has been demonstrated. By serially connecting two back-to-back subcells, ${\rm Hf\hbox{-}HfO}_{y}\hbox{-}{\rm TiN}$ and ${\rm Hf\hbox{-}TaO}_{x}\hbox{-}{\rm TiN}$ , the cell exhibits outstanding performances, including low $I_{\rm max}$ (35 $\mu{\rm A}$ ), stable $I_{{\rm\scriptstyle ON}} ({>}{\rm 10}~\mu{\rm A})$ , and $I_{{\rm\scriptstyle OFF}}( , and over $2\times 10^{{4}}$ dc cycles. By examining the switching characteristics, we have confirmed the well controlled conduction/filament size during the complementary set/reset processes contributes to the stable and low current operation.

A Novel RRAM Stack With ${\rm TaO}_{x}/{\rm HfO}_{y}$ Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected Subcells

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The Role of Ti Capping Layer in HfO x -Based RRAM Devices

ALD HfO2 Based RRAM with Ti Capping

Switching Behaviors of TiN/HfOx/Pt Based RRAM

A Novel RRAM Stack With ${\rm TaO}_{x}/{\rm HfO}_{y}$ Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected Subcells