Bablu Mukherjee
National Institute for Materials Science
41 Papers
280 Citations
Bablu Mukherjee is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Photocurrent & Photoconductivity. The author has an hindex of 17, co-authored 39 publications. Previous affiliations of Bablu Mukherjee include George Washington University & Indian Institute of Technology Bombay.
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Papers
NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet
TL;DR: High-quality, micrometer-sized, single-crystal GeSe nanosheets are synthesized using vapor transport and deposition techniques and significant photoresponse and good responsitivity suggests its potential applications as photodetectors.
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NIR Schottky photodetectors based on individual single-crystalline GeSe nanosheet.
TL;DR: In this paper, the Schottky photodetector exhibits a marked photoresponse to NIR light illumination (maximum photoconductive gain ∼5.3 × 102 % at 4 V) at a wavelength of 808 nm.
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Complex electrical permittivity of the monolayer molybdenum disulfide (MoS 2 ) in near UV and visible
TL;DR: In this article, temperature and Fermi energy dependent exciton eigenenergies of monolayer molybdenum disulfide (MoS2) were calculated using an atomistic model.
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Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures
Bablu Mukherjee,Amir Zulkefli,Kenji Watanabe,Takashi Taniguchi,Yutaka Wakayama,Shu Nakaharai +5 more
TL;DR: In this article, a few-layer ReS2 field effect transistors (FET) with a local floating gate of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated.
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