B. Sijmus
Katholieke Universiteit Leuven
21 Papers
151 Citations
B. Sijmus is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Breakdown voltage & High-electron-mobility transistor. The author has an hindex of 8, co-authored 21 publications.
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Papers
Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si 3 N 4
Joff Derluyn,M. Van Hove,Domenica Visalli,Anne Lorenz,Denis Marcon,Puneet Srivastava,Karen Geens,B. Sijmus,J. Viaene,Xuanwu Kang,J. Das,Farid Medjdoub,Kai Cheng,Stefan Degroote,Maarten Leys,Gustaaf Borghs,Marianne Germain +16 more
- 01 Dec 2009
TL;DR: In this paper, the Si 3 N 4 not only acts as a passivation layer but also acts as an electron donating layer, which is crucial in the device concept as it acts as electron donor layer.
41
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON
Anne Lauwers,Anabela Veloso,T. Y. Hoffmann,M.J.H. van Dal,Christa Vrancken,Stephan Brus,S. Locorotondo,J.-F. de Marneffe,B. Sijmus,Stefan Kubicek,T. Chiarella,M. A. Pawlak,Karl Opsomer,M. Niwa,R. Mitsuhashi,K.G. Anil,Hui Yu,Caroline Demeurisse,Rita Verbeeck,M. de Potter,Philippe Absil,Karen Maex,M. Jurczak,S. Biesemans,Jorge A. Kittl +24 more
- 01 Dec 2005
TL;DR: In this article, a 2-step Ni-phase controlled FUSI process was used for simultaneous full silicidation of nMOS and pMOS, achieving different Ni/Si ratios.
27
Characterisation and integration feasibility of JSR's low-k dielectric LKD-5109
A. Das,T. Kokubo,Y. Furukawa,Herbert Struyf,I. Vos,B. Sijmus,Francesca Iacopi,J. Van Aelst,Quoc Toan Le,L. Carbonell,Sywert Brongersma,M. Maenhoudt,Zsolt Tokei,Iwan Vervoort,Erik Sleeckx +14 more
TL;DR: In this article, the feasibility of integrating LKD-5109 in a single inlaid structure has been investigated Thermal stability, chemical compatibility to stripping agents and CMP slurries are verified.
20
AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
Kai Cheng,Stefan Degroote,Maarten Leys,Farid Medjdoub,Joff Derluyn,B. Sijmus,Marianne Germain,Gustaaf Borghs +7 more
TL;DR: In this paper, the authors show that good quality AlN layers can be grown on GaN at a relatively low growth temperature when TMIn is added to the carrier gas flow as a surfactant.
19
Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETs
Anabela Veloso,K.G. Anil,Liesbeth Witters,Stephan Brus,Stefan Kubicek,J.-F. de Marneffe,B. Sijmus,Katia Devriendt,Anne Lauwers,Thomas Kauerauf,Malgorzata Jurczak,Serge Biesemans +11 more
- 13 Dec 2004
TL;DR: In this paper, an extensive characterisation of fully silicided gate (FUSI) devices with oxynitride (SiON) and Hf-silicate gate dielectrics is presented.
18