An overview of through-silicon-via technology and manufacturing challenges

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

A copper-based metal polishing solution comprises a water-soluble organic acid capable of reaction with copper to form a copper complex compound which is unlikely to be dissolved in water and has a mechanical strength lower than that of copper. The polishing solution also contains polishing abrasive grains and water. The polishing solution of the particular composition does not dissolve at all copper or a copper alloy when a copper or copper alloy film is immersed in the polishing solution, and permits polishing the copper or copper alloy film at a practical rate in the polishing step.

Copper-based metal polishing solution and method for manufacturing a semiconductor device

Potentiodynamic and potentiostatic polarization, and the rotating disk electrode technique, were used to study the anodic behavior of tungsten (W) in a broad pH range (0.5-13.5) in H 3 PO 4 /KOH buffered solution. Surface oxides were found to play a prominent role in the anodic oxidation and dissolution of tungsten. Five distinct pH regimes and the corresponding reaction mechanisms were identified. Below pH I (region A) H + -assisted dissolution was the main dissolution pathway. As the pH increased, the role of H diminished and at pH 2.6 (region B), which was identified as the point of zero charge (pzc) of the surface tungsten oxide, dissolution was mainly H 2 O-assisted. The dissolution was observed to be OH -assisted above the pzc. The reaction order for OH was one between pH 4.5 and 6.5 (region C). The reaction order became zero at pH 8 (region D). This observation was attributed to the pH-independent dissolution of the hydrated oxide phase. Above pH 10, OH dependence of the anodic current commenced and at around pH 12.5 (region E) the reaction order for OH - became one.

https://iopscience.iop.org/article/10.1149/1.1471544/pdf

Effect of pH on the Anodic Behavior of Tungsten

The interaction between ceria particles and silicate ions was studied in order to further understand the mechanism of chemical-mechanical polishing (CMP) of silicon-based materials. Electrophoretic mobility (zeta potential) and adsorption measurements were the techniques utilized. In the presence of silicate ions, the zeta potential of ceria particles changed from positive to negative; in addition, the isoelectric point IEP of the particles shifted to lower pH values with increasing silicate addition. The adsorption density of silicate ions on ceria was found to increase as the concentration of silicate ions in the system increased. Also, with increase in pH, silicate adsorption went through a maximum at about pH 9, then decreased rapidly at higher pH values. The adsorption and zeta potential results are rationalized by considering the solution chemistry of the dissolved silicate species, the protonation/deprotonation of ceria surface, and the accompanying surface complexation reactions. These experimental observations demonstrate a strong interaction between ceria particles and silicate ions. The implication is that adsorption of silicate ions on ceria may be directly involved in the removal mechanism of silicon-based materials during the CMP process. © 2004 The Electrochemical Society. All rights reserved.

https://iopscience.iop.org/article/10.1149/1.1785793/pdf

Cerium Oxide Slurries in CMP. Electrophoretic Mobility and Adsorption Investigations of Ceria/Silicate Interaction

The chemical-mechanical planarization (CMP) techniques applied to insulating layers in multilayered integrated circuits are discussed. Advantages and concerns of CMP are considered. Process developments are described. >

Chemical-mechanical planarization

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Chemical-mechanical planarization