Edge-TCT method was used to extract velocity profiles in heavily irradiated silicon micro-strip detectors. Detectors were irradiated up to 1016 c -2 with reactor neutrons, 200 MeV pions and a combination of both. A simple electric field model assuming two space charge regions at each side of the detector and neutral bulk in-between was found to describe the field profile. It was observed that after heavy irradiation a sizeable electric field is present in the entire detector volume. For pion-irradiated detectors strikingly different profiles were obtained and attributed to the large oxygen concentration in the detector bulk. The model parameters were also studied during the long term annealing. The space charge region near the strips was found to shrink which in turn leads to larger electric field and impact ionization. The model parameters extracted from the measurements were fed to the device simulation program which showed reasonable agreement between simulated and measured data at lower fluences.

http://iopscience.iop.org/article/10.1088/1748-0221/9/10/P10016/pdf

Modeling of electric field in silicon micro-strip detectors irradiated with neutrons and pions

A new pixel assembly concept for high energy physics experiments at the HL-LHC is investigated. It answers the challenges posed by the high instantaneous luminosities, resulting in high track densities and radiation damage. It employs five novel technologies: n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICV).

Investigation of Properties of Novel Silicon Pixel Assemblies Employing Thin n-in-p Sensors and 3D-Integration

The luminosity upgrade of the LHC will extend the reach for discoveries of new physics and enable more precise measurements of the Standard Model. The properties of planar n-in-p silicon sensors with thicknesses ranging from 100 to 300 µm and employing active or slim edges are investigated to develop radiation hard pixel modules for the ATLAS experiment. Specific studies are presented in view of the future module geometries for the different layers and pseudorapidity regions of the new ATLAS pixel detector.

Development of radiation hard pixel modules employing planar n-in-p silicon sensors with active edges for the ATLAS detector at HL-LHC

One of the four large experiments at the LHC at CERN is the ATLAS detector, a multi purpose detector. Its pixel detector, composed of three layers, is the innermost part of the tracker. As it is closest to the interaction point, it represents a basic part of the track reconstruction. Besides the requested high resolution one main requirement is the radiation hardness. In the coming years the radiation damage will cause deteriorations of the detector performance. With the planned increase of the luminosity, especially after the upgrade to the High Luminosity LHC, this radiation damage will be even intensified. This circumstance necessitates a new pixel detector featuring improved radiation hard sensors and read-out chips.
 The present shutdown of the LHC is already utilized to insert an additional b-layer (IBL) into the existing ATLAS pixel detector. The current n-in-n pixel sensor design had to be adapted to the new read-out chip and the module specifications. The new stave geometry requests a reduction of the inactive sensor edge. In a prototype wafer production all modifications have been implemented. The sensor quality control was supervised which led to the decision of the final sensor thickness. In order to evaluate the performance of the sensor chip assemblies with an innovative slim edge design, they have been operated in test beam setups before and after irradiation. Furthermore, the quality control of the planar IBL sensor wafer production was supervised from the stage of wafer delivery to that before the flip chip process to ensure a sufficient amount of functional sensors for the module production.

/pdf/submitter-slim-edge-studies-design-and-quality-control-of-3f36h409ca.pdf

submitter : Slim edge studies, design and quality control of planar ATLAS IBL pixel sensors

In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023–2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more radiation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 μm recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance and charge sharing between neighbouring cells as a function of track incidence angle for different bulk materials. Measurements of n-in-n pixel sensors are presented as a function of fluence for different irradiations. Furthermore p-type silicon sensors from several vendors with slightly differing layouts were tested. All tested sensors were connected by bump-bonding to the ATLAS Pixel read-out chip. We show that both n-type and p-type tested planar sensors are able to collect significant charge even after integrated fluences expected at HL-LHC.

Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results

The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.

Planar pixel sensors for the ATLAS upgrade: beam tests results

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Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results

Planar pixel sensors for the ATLAS upgrade: beam tests results