This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features.This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

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Diamond growth by chemical vapour deposition

Diamond power devices: state of the art, modelling, figures of merit and future perspective

In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricated in GaN technology is provided, highlighting their noise performance together with high-linearity and high-robustness capabilities. Several SELEX-ES GaN monolithic technologies are detailed, providing the results of the noise characterization and modeling on sample devices. An in-depth review of three LNAs based on the 0.25- μm GaN HEMT process, marginally described in previous publications, is then presented. In particular, two robust and broadband 2-18-GHz monolithic microwave integrated circuit (MMIC) LNAs are designed, fabricated, and tested, exhibiting robustness to over 40-dBm input power levels; an X-band MMIC LNA, suitable for synthetic aperture radar systems, is also designed and realized, for which measurement results show a noise figure ~ 2.2 dB with an associated gain and robustness up to 41-dBm input power level.

GaN-Based Robust Low-Noise Amplifiers

This letter reports the small-signal and large-signal performances at high drain voltage ( $\text{V}_{\textsf {DS}}$ ) ranging up to 60 V for a 0.5 $\mu \text{m}$ gate length two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor with a 100-nm-thick atomic-layer-deposited Al2O3 film on a IIa-type polycrystalline diamond substrate with (110) preferential surfaces. This diamond FET demonstrated a cutoff frequency ( $\text{f}_{\textsf {T}}$ ) of 31 GHz, indicating that its carrier velocity was reaching $\textsf {1.0}\times \textsf {10}^{\textsf {7}}$ cm/s for the first time in diamond. In addition, a $\text{f}_{\textsf {T}}$ of 24 GHz was obtained at $\text{V}_{\textsf {DS}}=-\textsf {60}$ V, thus giving a $\text{f}_{\textsf {T}}\times \textsf {V}_{\textsf {DS}}$ product of 1.44 THz $\cdot \text{V}$ . This diamond FET is promising for use as a high-frequency transistor under high voltage conditions. Under application of a high voltage, a maximum output power density of 3.8 W/mm (the highest in diamond) with an associated gain and power added efficiency were 11.6 dB and 23.1% was obtained when biased at $\text{V}_{\textsf {DS}}=-\textsf {50}$ V using a load-pull system at 1 GHz.

3.8 W/mm RF Power Density for ALD Al 2 O 3 -Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb2O5, WO3, V2O5, and MoO3. The low electron affinity Al2O3 was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 × 1013 cm−2, and a lower sheet resistance, down to 2.6 kΩ/sq, in comparison to the atmosphere-induced values of about 1 × 1013 cm−2 and 10 kΩ/sq, respectively. On the other hand, hole mobiliti...

Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

A complete design flow starting from the technological process development up to the fabrication of digital circuits is presented The aim of this work is to demonstrate the GaAs Enhancement/Depletion (E/D) double stop-etch technology implementation feasibility for digital applications, aimed at mixed signal circuit integration On the basis of the characterization of small E/D devices with different Gate peripheries, developed by the SELEX-SI foundry, and the analysis of several GaAs-based logical families, the most suitable logic for the available technology has been selected Then, simple test vehicles (level shifters, NOR logic gates and D Flip-Flops) have been designed, realized, and measured to validate the design strategy applied to the GaAs E/D process These logical circuits are preliminary to the design of a more complex serial-to-parallel converter, to be implemented onto the same chip together with RF analog blocks, such as stepped attenuators and phase shifters

https://downloads.hindawi.com/archive/2011/387137.pdf

Design and Realization of GaAs Digital Circuit for Mixed-Signal MMIC Implementation in AESA Applications

Accurate large-signal equivalent circuit of surface channel diamond FETs based on the Chalmers model

On the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model was formulated and characterized for metal-semiconductor field effect transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias-dependent transistor behavior representation was fully determined. Such an equivalent circuit model is the first important step to realize an RF IC based on diamond. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2783–2786, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24734

Modeling of diamond field-effect transistors for RF IC development

Diamond is in principle the highest performance widegap semiconductor; its outstanding electronic and thermal properties make it an attractive material for high power radiofrequency (RF) and microwave electron devices. Even though the properties of synthetic diamond have been known from many years, only recently significant technology advances in the growth of single-crystal and polycrystalline diamond have fostered the research on high-performance diamond electronics. In this framework, the use of polycrystalline diamond as a substrate offers the advantage of larger areas and lower cost with respect to single-crystal diamond. Available approaches for the control of diamond conductivity rely mainly (up to now) on p-type doping, either through extrinsic doping with boron, or exploiting hydrogen (H) surface termination, which induces a quasi-2D hole channel a few nanometers below the surface. Both approaches have been pursued to develop high speed power FETs [1], with record cut-off frequency (45 GHz) achieved by H-terminated FETs on polycrystalline diamond [2]. Despite such promising small-signal performances, only a few examples of RF power measurements have been reported so far, limited at comparatively low frequency (1 GHz), and only for single-crystal diamond FETs, with record performance of 2W/mm [3]. In this paper, we present RF power measurements of submicron H-terminated FETs on polycrystalline diamond up to 2 GHz, showing the potential of such substrate for the development of microwave power devices.

RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond

C-Band MMIC chipset and digital control circuits for T/R modules based on GaAs enhancement/depletion technology

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