B. Nagaraj
University of Maryland, College Park
14 Papers
301 Citations
B. Nagaraj is an academic researcher from University of Maryland, College Park. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 11, co-authored 14 publications.
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Papers
Leakage current mechanisms in lead-based thin-film ferroelectric capacitors
TL;DR: In this paper, the authors investigated the leakage current at low fields (0.5 V or 10 kV/cm) with a slope of nearly 1 and is nonlinear at higher voltages and temperatures.
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Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films
Valanoor Nagarajan,S. P. Alpay,C. S. Ganpule,B. Nagaraj,Sanjeev Aggarwal,Ellen D. Williams,Alexander L. Roytburd,R. Ramesh +7 more
TL;DR: In this paper, the effect of various substrates on the electrical and electromechanical properties of 100-nm-thick epitaxial 0.1PT thin films is investigated, showing that the films on MgO substrates have the highest dielectric constant and piezomodulus with Tm below room temperature.
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Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)–PbTiO3(10%) relaxor thin films
Valanoor Nagarajan,C. S. Ganpule,B. Nagaraj,Sanjeev Aggarwal,S. P. Alpay,Alexander L. Roytburd,Ellen D. Williams,R. Ramesh +7 more
TL;DR: The effect of heteroepitaxy-induced constraint on the structure and piezoelectric properties of the relaxor ferroelectric lead magnesium niobate-lead titanate (PMN-PT) was investigated in this paper.
97
(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications
B. Nagaraj,T. Sawhney,S. R. Perusse,Sanjeev Aggarwal,R. Ramesh,Vidya Kaushik,Sufi Zafar,Robert E. Jones,Jian Hung Lee,Venkatasubramani Balu,Jack C. Lee +10 more
TL;DR: In this paper, the performance of (Ba,Sr)TiO3 (BST) capacitors for ultralarge scale integration dynamic random access memories (DRAM) was investigated.
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Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors
TL;DR: In this article, it was shown that (La,Sr)CoO3 oxide electrodes can act as a diffusion barrier to hydrogen during forming gas anneals, which is the primary mechanism for loss of ferroelectricity.
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