The implementations of fuel cells (FCs) in the vehicle industry have gained great attention for the last few decades owing to simple utilization, silent operation, high efficiency and modular structure. Technological advancements show that the use of FCs in electric vehicles (EVs) will increase rapidly and cause a revolution, and will be an alternative to traditional vehicles in the future. Commercial vehicles, projects and research show that work is underway to ensure that FCEVs have sufficient performance advances for their daily transportation needs. However, the lack of a detailed study that will shed light on researchers working in this field is obvious. It aims to provide a comprehensive scientific publication on the current status and future expectations to engineers and researchers interested in this field. In the current study, numerous studies have been examined in detail and added as supplementary to the bibliography. In this context, FCEVs are classified under headings of configurations, systems components, control/management, technical challenges, marketing and future aspects. First of all, FC types and electric motors are discussed in terms of their application areas, characteristic properties and operating conditions. Power converters, which are voltage regulation and motor drive topologies used in FCEVs, are detailed according to the structural frequency of use, structure, and complexity. In the next sections, control issues for converters and technical challenges are branched for FCEVs. In final section, the current status and future aspects are reported using a large number of marketing and target data.

A review and research on fuel cell electric vehicles: Topologies, power electronic converters, energy management methods, technical challenges, marketing and future aspects

Wide bandgap (WBG) device-based power electronics converters are more efficient and lightweight than silicon-based converters. WBG devices are an enabling technology for many motor drive applications and new classes of compact and efficient motors. This paper reviews the potential applications and advances enabled by WBG devices in ac motor drives. Industrial motor drive products using WBG devices are reviewed, and the benefits are highlighted. This paper also discusses the technical challenges, converter design considerations, and design tradeoffs in realizing the full potential of WBG devices in motor drives. There is a tradeoff between high switching frequency and other issues such as high dv/dt and electromagnetic interference. The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt , and the reliability of WBG devices are discussed.

Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges

A review of DC/DC converter-based electrochemical impedance spectroscopy for fuel cell electric vehicles

This paper presents the technological advancements of the electric vehicles (EVs) all over the world. The first emphasis is on the various types of the EVs along with the energy management strategies (EMSs). The EVs are equipped with different energy storage elements such as lithium-ion batteries, super capacitors (SCs) and fuel cells (FCs). Hence, it is important to optimize the power split between the various energy storage systems (ESSs) under the complex driving conditions. The second imperative aspect is the utilization of the energy efficient wide bandgap (WBG) semiconductor technology. The WBG materials present the superior properties like wide bandgap, high saturated drift velocity and high critical breakdown field. This has led a path for the development of SiC and GaN based power semiconductor devices (PSDs). However, this paper mainly focuses on the utilization of the SiC devices for the EV applications. The substantial features of the various SiC devices are presented along with the performance aggrandization methods. Furthermore, this paper presents the updated survey and various performance measures of the SiC based power converter topologies. It also emphasizes the necessity of energy optimization for the EV charging systems. On the other hand, the burning issues associated with the SiC power modules other than the power converters are explored in detail. This extensive literature survey provides insightness for the design and research engineers in view of fulfilling the research gaps between the current and the desired targets. 

A review on energy efficient technologies for electric vehicle applications

This paper presents the short-circuit behavior and degradation of 650-V/60-A enhancement-mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test conditions. First, this paper introduces the basic information of device, test method, and platform. Subsequently, single pulse, 10-μs short-circuit tests are performed from 50 to 400 V to extract the typical behavior of devices. Both short-circuit current self-regulation phenomenon and quick failure have been observed. Simultaneously, the short-circuit behavior of the device at various gate drive voltages and temperatures has been explored to identify the protection condition. Then, repetitive short-circuit tests have been performed to reveal device degradation trends. As a result, their output current reduction and gate-to-source threshold voltage shift have occurred. This paper shows the critical need to improve the robustness of this type of GaN HEMT from the device and circuit perspectives.

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

Over the past decade, wide bandgap power devices have demonstrated superior electrical and thermal characteristics over Si-based devices at not only the die level but also when integrated into systems. In this paper, a high current 650 V GaN-based power module is presented for high frequency, high power conversion systems. The design and key features of the GaN-based power module are discussed. Both the thermal and electrical characteristics of the GaN-based power module were modeled to estimate the junction-to-case thermal resistance, power loop inductance, and power loop resistance. In addition, the on-state curves, on-resistance, and drain leakage were measured as a function of temperature. The dynamic characteristics were measured to evaluate the fidelity of the transient voltage and current waveforms, switching speeds, and estimate the switching energy losses.

A 650 V/150 A enhancement mode GaN-based half-bridge power module for high frequency power conversion systems

Wide bandgap materials are having a transformational impact on the electrical, thermal, and mechanical performance of military, industrial, and commercial power electronic systems where silicon (Si) power semiconductors are the present material technology of choice. This paper reports on the design, analysis, and experimental verification of a compact allsilicon carbide (SiC)-based inverter to meet the inhospitable environmental demands of hybrid, plug-in hybrid, extended-range electrified vehicles, and fuel cell vehicle architectures. The compact 4.8 L, 6.6 kg inverter achieves a volumetric and gravimetric power density of 23.1 kVA/L and 16.8 kVA/kg, respectively. Three 1200 V, 3.6 mΩ, half-bridge power modules, each containing seven 25 mΩ SiC MOSFETs and six 50 A Schottky barrier diodes (SBDs) per switch position, comprise the power stage. Significant improvement in conduction, switching, and reverse-recovery losses allowed this SiC MOSFET-based inverter to achieve 96.3% average efficiency and 98.9% average peak efficiency over all experiments. This is superior to Si IGBT-based inverters throughout the entire range of torques, speeds, and bus voltages — and especially at light load operating points typical of electric vehicles. Dynamometer experiments used a 20 kHz switching frequency, double-update space-vector modulation, thermal controls for ambient and coolant temperatures, custom data acquisition, and a commercial three-phase power meter to collect performance data over 500 to 6000 RPM, 5 to 180 N-m, four bus voltages, and six thermal cases.

A compact 110 kVA, 140°C ambient, 105°C liquid cooled, all-SiC inverter for electric vehicle traction drives

In this work, a compact 600 – 1700 V high current power package housing either silicon carbide (SiC) or gallium nitride (GaN) power die was designed and developed. Several notable configurations of...

A High Temperature, High Power Density Package for SiC and GaN Power Devices

In high frequency power conversion applications, one of the dominant mechanisms attributed to power loss is the turn-on and -off transition times. To this end, low inductance silicon carbide (SiC)-based near-hermetic and hermetic full-bridge power modules were designed to operate above standard operating temperatures. These power modules were optimized to exhibit low inductance power loops which are paramount for high frequency switching applications such as charging and power distribution systems. Three-dimensional finite-element parasitic modeling was performed to determine the parasitic impedance values of the package. In addition, the junction-to-case thermal resistance and breakdown of the thermal stack-up was modeled to determine the thermal characteristics of the package. Moreover, both power modules were designed and packaged using high temperature materials and processes such that the package housing is resistant to high temperature excursions from the die and/or ambient environment.

High temperature, wide bandgap full-bridge power modules for high frequency applications

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A 650 V/150 A enhancement mode GaN-based half-bridge power module for high frequency power conversion systems

A compact 110 kVA, 140°C ambient, 105°C liquid cooled, all-SiC inverter for electric vehicle traction drives

A High Temperature, High Power Density Package for SiC and GaN Power Devices

High temperature, wide bandgap full-bridge power modules for high frequency applications