https://research.iaun.ac.ir/pd/neghabi/pdfs/PaperM_9084.pdf

Electrical and electroluminescence properties of ITO/PEDOT:PSS/TPD:Alq3:C60/Al organic light emitting diodes

In this paper, we derive the Mott-Gurney Law for space-charge-limited current and model the current density characteristics for a bilayer polymer light emitting diode (ITO/PPV/CN-PPV/Al). The organic material is assumed to be trap free and the influence of electric field on the carrier mobilities is neglected. Since the hole energy barrier between the ITO and PPV is less than 0.60 eV, the bottleneck for current flow is bulk-limited, resulting in space-charge-limited current. We discuss future plans for interposing a thin-layer of metal (Au, Pt, Pd, or AuPd) between the ITO and PPV. Experimental data will be compared to the J-V curve produced in this model, providing insight on how the metal buffer influences the range of potentials for which the current is space-charge-limited. Finally, the emissive spectrum is modeled with consideration of phonon-exciton coupling.

Application of Mott-Gurney law to model the current-voltage relationship of PPV/CN-PPV with a thin-metal anode buffer

CHAPTER V. Conclusions

Silicon p–i–n diodes have attracted considerable attention for their use as many applications. In the light of reducing total power loss, the forward voltage Vf and the reverse recovery charge Qr of silicon p–i–n power diodes are controlled by using two approaches based on control of either carrier lifetime or carrier injection efficiency. In this study, we investigate the effect of the two approaches on the relationship between Vf and Qr for a Si p–i–n diode rated at 200 A/1200 V via theoretical analyses. The magnitude of Vf for a given Qr value depends on rate of current density decreasing dj/dt. In the case of large values of dj/dt, carrier injection control can lead to decrease in Vf and Qr to a greater extent. In contrast, at small values of dj/dt, carrier lifetime control can provide a greater decrease in Vf and Qr.

http://iopscience.iop.org/article/10.7567/JJAP.54.04DP01/pdf

Theoretical analysis of forward voltage and reverse recovery charge of silicon p–i–n diodes

We propose use of heterostructures in PIN rectifiler diodes for obtaining faster switching speed It is shown that by employing a small bandgap material in the heavily doped P layer and a wide bandgap material in the intrinsic region, reverse recovery time can be significantly lowered without compromising either the breakdown or the forward ON voltage

Heterostructure PIN Rectifier Diode For Power Applications

The use of p þ n þ universal contact for improving switching performance in diodes is studied in detail. A theoretical framework is described which shows that the incorporation of universal contact either at the end of the lightly doped region or in the injecting p or n regions of the diode can all be viewed as an attempt to reduce the effective minority carrier lifetime in the diode by redistributing minority carrier current from the lightly doped region of the diode where recombination lifetime is high to other regions of the diode where the presence of universal contact results in smaller recombination lifetime. It is shown that the incorporation of universal contact allows a new tradeoff between the effective recombination lifetime and the reverse blocking voltage determined by the proximity of universal contact to the lightly doped region of the diode. The impact of insertion of universal contact on reverse recovery is discussed as a function of current density and reverse blocking voltage. 2002 Published by Elsevier Science Ltd.

/pdf/a-study-into-the-applicability-of-p-n-universal-contact-to-1tfs8dogkr.pdf

A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery

Efficiency of carrier recombination in bilayer organic light emitting diodes is described using numerical simulations and analytical model. It is shown that the most important factor that determines efficiency is the ratio of hole and electron mobility in the electron transport layer. When this ratio is much less than unity, recombination efficiency is 100% even without the presence of either an electron or hole barrier at the organic–organic interface. However, if the hole mobility is much higher than electron mobility, then a hole barrier at the organic interface is necessary to achieve a high recombination efficiency. The minimum interfacial hole barrier height required for high efficiency increases with the ratio of hole and electron mobilities in electron transport layer.

Recombination efficiency in bilayer organic light-emitting diode

The improvement in reverse recovery of power NPN bipolar transistor (BJT) through incorporation of “universal contact” in the base is studied in detail. It is shown that use of universal contact allows redistribution of base current in saturation from collector region where recombination lifetime is high to extrinsic base region where effective recombination lifetime is low. The reverse recovery time decreases as collector current density increases but increases as collector breakdown voltage increases. The improvement in reverse recovery is accompanied with an increase in collector–emitter voltage in the ON state. For low voltage transistors and high voltage transistors at low collector current densities, the increase is primarily due to reduction in reverse current gain. For high breakdown voltage transistors, the use of universal contact results in early onset of quasi-saturation effect and results in degradation in ON state voltage at high collector current densities.

/pdf/study-of-improved-reverse-recovery-in-power-transistor-2oy4w4bsry.pdf

Study of improved reverse recovery in power transistor incorporating universal contact

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A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery

Recombination efficiency in bilayer organic light-emitting diode

Study of improved reverse recovery in power transistor incorporating universal contact