Continuous-time auto-zero and ping-pong operational amplifiers dedicated to space applications are proposed. The circuits were implemented in a standard 130 nm CMOS technology. They have been irradiated to evaluate their low-dose-rate radiation sensitivity. Measurement results show that these architectures can provide an input offset voltage lower than 1 µV. Comparisons with commercial low offset amplifiers are made to show the interest of the auto-offset cancellation for space applications.

Radiation-Hardened Low-Level Offset Operational Amplifiers

This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO
 2
 back-gate interface of SOI NMOSFETs during irradiation are studied by the direct-current current-voltage technique. When transistors are subjected to radiation, DCIV bulk current increases. The calculated results suggest that the interface trap density increases and its equivalent energy level is far away from the midgap with irradiation dose increasing, which can be explained by the energy distribution of interface traps. The interface trap energy density D
 IT
(E
 IT
) as a function of the energy level E
 IT
 has been obtained by the least square optimization and shows the typical “U-shape”distribution. In detail, the rising humps at equivalent energy level in D
 IT
(E
 IT
) curves are due to Si-H bonds that are broken down after irradiation, which corresponds to the increasing trap density. Moreover, it is found that the energy level of interface traps is redistributed after irradiation. The peak of humps in D
 IT
(E
 IT
) curves occurs at the farther energy level with the increase of dose, which is similar to the equivalent energy level. It might arise from the shallow energy level of interface traps induced by radiation.

/pdf/effect-of-radiation-on-interface-traps-of-soi-nmosfets-by-r3ptplddhv.pdf

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Low Earth orbit missions have become crucial for a variety of applications, from scientific research to commercial purposes. Exposure to ionizing radiation in Low Earth Orbit (LEO) poses a significant risk to both spacecraft and astronauts. In this article, we analyze radiation data obtained from different LEO missions to evaluate the potential of using electronic commercial off-the-shelf (COTS) devices in space missions. This study is focused on the total ionizing dose (TID). Our results demonstrate that COTS technology can effectively provide cost-effective and reliable solutions for space applications. Furthermore, we compare the data obtained from actual missions with computational models and tools, such as SPENVIS, to evaluate the accuracy of these models and enhance radiation exposure prediction. This comparison provides valuable insights into the true radiation environment in space and helps us to better understand the potential of COTS technology in reducing costs and development times by utilizing technology previously used in other areas. In light of the results, we can see that the radiation values observed experimentally in space missions versus the computer simulations used present variations up to a factor of 30 depending on the model used in the analysis. 

Toward the Use of Electronic Commercial Off-the-Shelf Devices in Space: Assessment of the True Radiation Environment in Low Earth Orbit (LEO)

Negative bias temperature instability (NBTI) in MOS capacitors has been investigated using a novel NBTI measurement method, named two-point capacitance-voltage (TPCV). This method is based on C-V techniques and allows one to independently separate the interface (ΔN it ) and oxide traps (ΔN ot ) induced by NBTI. For the first time, to our knowledge, such a method is proposed. The TPCV method permits a broad investigation in reliability studies by exploiting changes in capacitance. It is based on a simple theoretical concept and consists of measuring the evolution of capacitance at two points; the first at the flat-band voltage (V fb ) and the second at V fb + ΔV. By assuming a linear CV characteristic variation between V fb and mid-gap voltage (V mg ), the relations of voltage shifts components (V fb , V mg , and V it ) are developed. The experimental results have shown that the proposed approach allows reducing the recovery amount compared to full CV characteristics. The trapped charge, ΔN ot and ΔN it present a power law stress-time-dependence. In addition, the results have shown a quasi different kinetic of interface state generation as well as oxide trapped charges, while the component ΔN ot is greater than ΔN it .

Two-point capacitance-voltage (TPCV) concept: A new method for NBTI characterization

An Overview of the NBTI Phenomenon in MOS Devices

The OTCP extraction method is compared to C-V one for two radiation doses, 500 Krad and 1Mrad. It is shown that the radiation induced oxide-trap (DeltaNot) obtained by OTCP are in excellent agreement with DeltaNot extracted using C-V. However, for interface-trap density (DeltaNit), most DeltaNit values extracted by C-V method in MOS capacitors are 70% less than those measured using OTCP in P- and N-MOS transistors. This underestimation is probably due to the fact that C-V scans interface-trap less than C-P in forbidden band energy. In addition, the OTCP method can give the radiation induced border-trap (DeltaNbt). Hence, we have confirmed that OTCP is more precise, direct and reliable method than C-V to predict radiation-induced interface-, oxide-, and border-trap in MOS transistors in order to evaluate their impact on devices intended for space and medical applications.

Comparison between OTCP and C-V extraction methods for radiation-induced traps in MOSFET devices

N-MOSFET of 20 nm and 40 nm gate oxide thicknesses were irradiated with 60Co gamma-ray source. They were characterized by Oxide-Trap based on Charge-Pumping method (OTCP). The total dose response is shown to depend on gate oxide. In fact, the results show that the turn around effect occurs at different doses depending on oxide thickness. For a 40 nm oxide thick, it appears at 10 krad and occurs at 500 krad for an oxide thickness of 20 nm. This means that thinner oxides are less sensitive to radiation than thicker one.

Investigation of gate oxide thickness effect on the radiation-induced traps in MOSFET devices using OTCP method

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Comparison between OTCP and C-V extraction methods for radiation-induced traps in MOSFET devices

Investigation of gate oxide thickness effect on the radiation-induced traps in MOSFET devices using OTCP method