B.M. Monroy

TL;DR: In this article, the influence of the microstructure and chemistry of the surrounding host on the strong visible photoluminescence (PL) from silicon nanoclusters (nc-Si) embedded in three different silicon-based dielectric compounds: SixNy:H,Cl, SixNeyOz:HCl, and SixNeys:Cl,Cl.

TL;DR: Polymorphous silicon thin films have been deposited from mixtures of dichlorosilane and hydrogen, using argon as the diluting gas by plasma-enhanced chemical vapor deposition to simultaneously obtain both Si nanocrystallites and an amorphous silicon matrix in the as-grown samples.

TL;DR: In this article, the authors reported the observation of positive optical gain in silicon nanocrystals (Si-nc) embedded in silicon nitride measured by the variable stripe length technique and reported gain coefficients up to 52 cm−1 at the highest excitation power (6.5 W/cm2).

TL;DR: Very thin (nanometric) silicon layers were grown in between silicon nitride barriers by SiH 2 Cl 2 /H 2 /NH 3 plasmaenhanced chemical vapor deposition (PECVD) as discussed by the authors.