The physical phenomena involved in the interaction of a laser-generated plasma plume with a background gas are studied numerically. A three-dimensional combined model is developed to describe the plasma plume formation and its expansion in vacuum or into a background gas. The proposed approach takes advantages of both continuous and microscopic descriptions. The simulation technique is suitable for the simulation of high-rate laser ablation for a wide range of background pressure. The model takes into account the mass diffusion and the energy exchange between the ablated and background species, as well as the collective motion of the ablated species and the background-gas particles. The developed approach is used to investigate the influence of the background gas on the expansion dynamics of the plume obtained during the laser ablation of aluminum. At moderate pressures, both plume and gas compressions are weak and the process is mainly governed by the diffusive mixing. At higher pressures, the interaction is determined by the plume-gas pressure interplay, the plume front is strongly compressed, and its center exhibits oscillations. In this case, the snowplough effect takes place, leading to the formation of a compressed gas layer in front of the plume. The background pressure needed for the beginning of the snowplough effect is determined from the plume and gas density profiles obtained at various pressures. Simulation results are compared with experimentally measured density distributions. It is shown that the calculations suggest localized formation of molecules during reactive laser ablation.

/pdf/laser-generated-plasma-plume-expansion-combined-continuous-3u9u5thbx3.pdf

Laser-generated plasma plume expansion: combined continuous-microscopic modeling.

Monte Carlo simulation is used to study the role of chemical reactions in the gas flow of particles laser desorbed from the target into a vacuum. The influence of recombination and dissociation processes on the properties of the gas flow is considered. It was found that chemical reactions have a significant effect on the composition of the desorption jet and on the angular and mean energy distributions of the desorbed particles. The study of these phenomena is of a particular interest for the understanding of the process of thin film deposition by pulsed laser ablation.

Monte Carlo simulation study of the effects of nonequilibrium chemical reactions during pulsed laser desorption

Thin film growth by the pulsed laser assisted deposition technique

http://optica.machorro.net/ablacion/pdf/SNI02/SiNxOy.pdf

Modification of refractive index in silicon oxynitride films during deposition

The band gap tuning of amorphous silicon carbon nitride thin (a-SiCN) film was demonstrated in the range of 2.3–3.0 eV by pulsed laser deposition using mixed targets. a-SiCN films were grown on silicon and quartz glass substrates at room temperature in a vacuum. Targets were fabricated by compacting a mixture of silicon carbide and silicon nitride powders. The stoichiometry of the film could be varied by the mixing ratio of the target. Ternary phase SiCN films were deposited at 30– 70 wt. % SiC in a target and their band gaps were controlled by appropriate adjustment of the carbon content. These findings indicate that the growth of a-SiCN films with a mixed target and their subsequent use as optoelectronic materials is a possibility.

Band gap engineering of SiCN film grown by pulsed laser deposition

Silicon oxide, oxynitride, and nitride films are deposited, at low temperature (≤450 °C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica, and silicon nitride targets, performed under vacuum and in an oxygen atmosphere. The specific influence of laser fluence, target materials, substrate temperature, and oxygen pressure on the composition and final properties of SiOxNy grown layers is investigated using various complementary experiments such as infrared optical absorption, Rutherford backscattering, Auger electron spectroscopy, ellipsometry, and scanning electron microscopy. The process conditions are optimized in order to deposit good quality silicon oxide and silicon nitride thin films.

Low‐temperature synthesis of silicon oxide, oxynitride, and nitride films by pulsed excimer laser ablation

Silicon oxide, oxynitride and nitride films are deposited at low temperature (<EQ 450 degree(s)C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica and silicon nitride targets, performed under vacuum and in oxygen atmosphere. We investigate in this paper the specific influence of laser fluence, target materials, substrate temperature and oxygen pressure on the composition and final properties of SiOxNy grown layers. The process conditions are optimized in order to deposit good quality silicon oxide and silicon nitride thin films.

Synthesis of silicon-based dielectric films by excimer laser ablation.

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Low‐temperature synthesis of silicon oxide, oxynitride, and nitride films by pulsed excimer laser ablation

Synthesis of silicon-based dielectric films by excimer laser ablation.