B. Junno
Lund University
12 Papers
178 Citations
B. Junno is an academic researcher from Lund University. The author has contributed to research in topics: Chemical beam epitaxy & Reflection high-energy electron diffraction. The author has an hindex of 6, co-authored 12 publications.
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Papers
Correlation of InGaP(001) surface structure during growth and bulk ordering
M. Zorn,P. Kurpas,A. I. Shkrebtii,B. Junno,Arnab Bhattacharya,K. Knorr,Markus Weyers,Lars Samuelson,J.-T. Zettler,Wolfgang Richter +9 more
TL;DR: In this paper, it was shown that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2.5 eV )-like surface conditions, whereas bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich surface dimer configuration.
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Temperature dependence of the InP(001) bulk and surface dielectric function
M. Zorn,T. Trepk,J.-T. Zettler,B. Junno,C. Meyne,K. Knorr,T. Wethkamp,M. Klein,M. S. Miller,Wolfgang Richter,Lars Samuelson +10 more
TL;DR: In this article, the bulk dielectric function, the surface reflectance anisotropy, and the surface dielectrics of InP(001) were determined from room temperature up to 875 K. Measurements were performed in-situ on as-grown samples in both a metal-organic vapour phase epitaxy and a chemical beam epitaxy (CBE) system using a rotating analyser type ellipsometer (SE) and a RAS.
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A reflection high-energy electron diffraction and atomic force microscopy study of the chemical beam epitaxial growth of inas and inp islands on (001) gap
TL;DR: In this article, the formation of strained InAs and InP island structures on GaP surfaces grown by chemical beam epitaxy was studied and atomic force microscopy studies of these structures were presented and the optical properties were discussed.
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A comparison of RHEED reconstruction phases on (100) InAs, GaAs and InP
TL;DR: In this article, a list of surface reconstructions for (001) InAs, GaAs and InP was compiled and compared with the growth properties of different semiconductor surfaces, and the phase boundaries can serve as temperature reference points in our epitaxy machine.
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Optical response of reconstructed GaP(001) surfaces
TL;DR: In this article, a line-shape analysis of the RAS signatures was performed and their temperature shifts have been compared to the respective shifts of the bulk critical points, which indicated the GaP(001)-(2\ifmmode\times\else\texttimes\fi{}1) surface dielectric anisotropy originating from transitions between bulk states modified by the surface due to band-folding effects and anisotropic shifts of critical point energies.
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