A quantitative study about the thermal activation of oxygen related thermal donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation has been performed through isothermal annealing at 430°C up to a total time of 120min. Space charge density after each annealing step has been measured by transient current technique. The localized energy levels related to thermal double donors (TD) have been observed and studied in details by thermally stimulated currents (TSCs) in the range of 10–70K, and activation energies E and effective cross sections σ have been determined for both the emissions TD0∕+ (E=75±5meV, σ=4×10−14cm2) and TD+∕+ (E=170±5meV, σ=2×10−12cm2). The evolution of the space charge density caused by annealing has been unambiguously related to the activation of TDs by means of current deep level transient spectroscopy TSC, and current transients at constant temperature i(t,T). Our results show that TDs compensate the initial boron doping, eventually pr...

https://cern.ch/dmeniche/documenti_david0/bruzziJAP06.pdf

Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

We report the fabrication and characterization of the visible-blind AlGaN/GaN-based avalanche heterojunction phototransistors (AHPT) with a collector-up configuration. The fabricated devices with 150-μm-diameter active area exhibit low dark currents of less than 20 pA at collector-emitter voltage (VCE) below 5.0 V. Optical gain as high as 3.6 × 104 was obtained due to the combination of photon-induced current amplification and carrier multiplication at an operating voltage of VCE = 53.5 V, which is much lower than the avalanche breakdown voltage required for GaN-based visible-blind avalanche photodiodes. An ultraviolet–visible rejection ratio of more than 100 was measured at zero bias. Under VCE = 5 V, a peak responsivity of 0.91 A/W was obtained at 335 nm.

High-gain AlGaN/GaN visible-blind avalanche heterojunction phototransistors

Quality monitoring of flowing water using colorimetric method based on a semiconductor optical wavelength sensor

An avalanche drift detector with photon counting capability is proposed and demonstrated. It combines the drift structure with a “point-like” Geiger mode avalanche diode, which is used as the collecting electrode. The diameters of the front entrance window and the avalanche diode of the fabricated detector are 294 and 10 μm, respectively, and the thickness of the whole depletion region is below 10 μm. Experimental results show that the dark count rate is 19.34 kHz at room temperature and is reduced to 2.78 kHz when the temperature decreases to −40 °C. When the light pulse frequency is below the saturation value of 140 kHz at room temperature, the average increase of the electrical signal frequency is about 3.5 kHz with a 10 kHz increase of the light pulse frequency.

Demonstration of an avalanche drift detector with front illumination

Based on the Kirk effect, a n+pn−n+ phototransistor with low optical threshold switching on high purity float-zone silicon was demonstrated. Under a collector-emitter voltage range from 3to15V, the phototransistor can turn on from a lower current state (range from 0.29to0.65mA) to a higher current state (range from 2.47to13.20mA) when it was triggered by illumination with a small critical optical power (range from 2.0to3.6μW). The theoretical calculations on critical collector current density were compared with the experimental results. Negative differential resistance and latch characteristics were observed and discussed.

Low-threshold-switch phototransistor based on Kirk effect and float-zone silicon

In this paper, we propose, analyze and demonstrate a high-purity float-zone (FZ) silicon phototransistor operating at the punch through state with high linearity and sensitivity. Those phototransistors were fabricated on high-purity FZ silicon substrates; the dependence of the sensitivity on incident optical power and bias voltages has been investigated to light with a wavelength of 0.83 μm from a laser diode. In accordance with theoretical prediction, it shows that the linearity reaches the highest when the base of the phototransistor is completely depleted (punch through), and the fitting goodness of output R 2 is 0.9954 over a 40 dB range from 0.15 to 1500 nW. The sensitivity of the phototransistor can be as large as 40–70 A/W at the punch through state, which is equivalent to an internal current conversion gain of about 75–130. The stability of 1% in the sensitivity for the punch through phototransistor with an internal current conversion gain of 130 can be obtained if the bias voltage and operating temperature can be stable to about 2.5% (1 in 40 V) and the temperature to ±2 °C.

Punch through float-zone silicon phototransistors with high linearity and sensitivity

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

B.J. Ning

Author Tools

Chat about Author

Papers

Punch through float-zone silicon phototransistors with high linearity and sensitivity