http://nathan.instras.com/documentDB/paper-44.pdf

Surface photovoltage phenomena: theory, experiment, and applications

There has been an enormous infusion of new ideas in the field of solar cells over the last 15 years; discourse on energy transfer has gotten much richer, and nanostructures and nanomaterials have revolutionized the possibilities for new technological developments. However, solar energy cannot become ubiquitous in the world's power markets unless it can become economically competitive with legacy generation methods such as fossil fuels. The new edition of Dr. Stephen Fonash's definitive text points the way toward greater efficiency and cheaper production by adding coverage of cutting-edge topics in plasmonics, multi-exiton generation processes, nanostructures and nanomaterials such as quantum dots. This book's new structure improves readability by shifting many detailed equations to appendices, and balances the first edition's semiconductor coverage with an emphasis on thin-films. Further, it now demonstrates physical principles with simulations in the well-known AMPS computer code developed by the author. This classic text is now updated with new advances in nanomaterials and thin films that point the way to cheaper, more efficient solar energy production and, many of the detailed equations from the first edition have been shifted to appendices in order to improve readability. It carries important theoretical points are now accompanied by concrete demonstrations via included simulations created with the well-known AMPS computer code.

太阳电池器件物理 = Solar cell device physics

http://doc.rero.ch/record/9672/files/Meillaud_F._-_Efficiency_limits_for_single-junction_20080815.pdf

Efficiency limits for single-junction and tandem solar cells

The possibility of obtaining a detailed picture of the electronic structure makes surface photovoltage spectroscopy (SPS) eminently suitable for bridging the gap between the chemical, physical, optical and electrical properties of semiconductors. In SPS, changes in band bending (both at the free semiconductor surface and at buried interfaces) are monitored as a function of external illumination. Surface photovoltage spectroscopy can provide detailed, quantitative information on bulk properties (e.g. bandgap and type, carrier diffusion length and lifetime) and can be used for complete construction of surface and interface band diagrams, including the measurement of energy levels in quantum structures. A particular strength is that a comprehensive analysis of surface and bulk defect state distributions and properties is made possible. Measurements using SPS are contactless and non-destructive. In addition, they can be performed both in situ and ex situ, at any reasonable temperature, on any semiconducting material, at any ambient and at any lateral resolution down to the atomic scale. This review starts with an overview of SPS-related surface and interface theory, describes the SPS experimental set-up and presents applications for surface and interface characterization of a wide variety of materials and structures, cross-correlating them with other methodologies. Copyright © 2001 John Wiley & Sons, Ltd.

Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

Charge-coupled device (CCD) area x-ray detector technology is reviewed. CCD detectors consist of a serial chain of signal components, such as phosphors, fiber optics or lenses, image intensifiers and the CCD which serve to convert the x-ray energy to light or electron-hole pairs and to record the spatially resolved image. The various combinations of components that have been used to make CCD detectors are described and the properties of each of the critical components are discussed. Calibration and correction procedures required for accurate data collection are described. The review closes with a brief description of future directions for solid-state area x-ray detectors.

Charge-coupled device area x-ray detectors

A model for the light induced creation of excess defects in hydrogenated amorphous silicon is proposed. The model fits well a set of experiments performed on standard a-Si:H samples under high intensity, white light illumination. The main conclusion from this the study is that a light induced reverse reaction contributes to recover weak bonds and explains the observed variable density of defects for different levels of illumination, as an equilibrium.

Light induced defects in a-Si:H : Saturation or equilibrium?

The uses of diborane, trimethylboron and trimethylgallium gases have been systematically compared in order to obtain p-type hydrogenated amorphous silicon grown in silane rf glow discharges. The doping properties and the contamination effects due to the thermal CVD have been investigated by an in situ Kelvin probe. This study, which has been completed by electrical (dark conductivity, activation energy and fill factor of standard p-i-n devices), and optical (a combination of transmission and photothermal deflection spectroscopy) measurements, indicates that trimethylboron doped layers have semiconducting properties similar to those of diborane doped layers. When trimethylboron is used, the contamination is shown to be reduced by at least a factor 50. In contrast, trimethylgallium, despite its acceptable doping efficiency, produces a contamination intermediate between the diborane and the trimethylboron ones. The effects of C incorporation in the doped layers have also been studied, in particular by optical absorption measurements in the band-edge region.

Hydrogenated amorphous silicon p-doping with diborane, trimethylboron and trimethylgallium

The characteristics of the signal produced in amorphous silicon detectors have been studied with alphas and protons of energy in the range 400 keV to 5.8 MeV. The detectors are p-i-n structures fabricated by plasma decomposition of silane. They are operated under inverse polarization from 0 to 100 V. The collected charge is studied as a function of the energy deposited in the detectors. The mechanisms involved in the charge collection are analyzed and the consequences over future detector development are discussed.

Effect of primary ionization in amorphous silicon detectors

We report electron photocarrier time-of-flight measurements at high electric fields for two thick hydrogenated amorphous silicon (a-Si:H) p-i-n diodes. At 77 K an exponential increase in the electron mobility of more than 100 is observed as the field is increasd to E=400 kV/cm. The dispersion parameter was field independent. We discuss previous reports of field-dependent dispersion in terms of interface effects. We propose a model for high-field effects based on an electric-field-dependent mobility edge which accounts satisfactorily for the measured electric field and temperature dependence of the electron-drift mobility. Effective-temperature models do not account for our measurements since they predict field-dependent dispersion. The microscopic electron mobility ${\mathrm{\ensuremath{\mu}}}_{0}$\ensuremath{\sim}3 ${\mathrm{cm}}^{2}$/V s is remarkably independent of electric field, temperature, and germanium alloying.

High-field electron-drift measurements and the mobility edge in hydrogenated amorphous silicon.

Prototypes of thin film p-i-n amorphous silicon detectors, having intrinsic layer thicknesses ranging from 3 to 18 μm, were designed and fabricated, and their response to protons of 1.3 to 11.6 MeV, and to α particles of 1.6 to 14.6 MeV was studied. The collection efficiency of the charges generated by a particle is found to decrease sharply with increasing dE dx , for dE dx values greater than 10 keV μm . However, there exists a domain of oblique angles of incidence, relatively high applied biases and low dE dx values over which the signal amplitude varies linearly with energy loss. Pulse shape studies show the signal to consist of a steep leading edge, attributed to prompt electron collection, and a slow component showing evidence of multiple-trapping transport of holes, which is a possible cause for incomplete collection of the generated charge at the maximum attainable field of 60 V μm . Finally, all detectors give signal amplitudes compatible with a mean electron-hole pair creation energy of 3.4 to 4.4 eV in a-Si: H.

Response of amorphous silicon p-i-n detectors to ionizing particles

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

B. Equer

Author Tools

Chat about Author