The authors review the nonlinear optical properties of semiconductor quantum wells that are grown inside high-Q Bragg-mirror microcavities. Light-matter coupling in this system is particularly pronounced, leading in the linear regime to a polaritonic mixing of the excitonic quantum well resonance and the single longitudinal cavity mode. The resulting normal-mode splitting of the optical resonance is observed in reflection, transmission, and luminescence experiments. In the nonlinear regime the strong light-matter coupling influences the excitation-dependent bleaching of the normal-mode resonances for nonresonant excitation, leads to transient saturation and normal-mode oscillations for resonant pulsed excitation and is responsible for the density-dependent signatures in the luminescence characteristics. These and many more experimental observations are summarized and explained in this review using a microscopic theory for the Coulomb interacting electron-hole system in the quantum well that is nonperturbatively coupled to the cavity light field.

Nonlinear optics of normal-mode-coupling semiconductor microcavities

The stimulated photoluminescence of the lower polariton in CdTe microcavities is studied at low temperature, using nonresonant excitation. The stimulation threshold is found to be independent of the number of quantum wells in the microcavities, which rules out the stimulation model based on population inversion of either localized excitons or electron-hole plasma. On the other hand, the final state stimulation deriving from boson statistics, or boser effect, is clearly evidenced by tuning the lower polariton to one LO phonon below the exciton reservoir. For detunings closer to zero, the stimulation is dominated by another physical mechanism, that could be the exciton-exciton scattering into the upper and lower polariton states.

Evidence of polariton stimulation in semiconductor microcavities

Theory of coherent effects in semiconductors

Summary form only given. Due to the possibility of realizing strong exciton-photon coupling in semiconductor microcavities, one could expect that also biexcitons are strongly modified by polariton effects, leading to formation of bipolaritons. In this work, we have investigated the nonlinear optical properties of a high-quality quantum well (QW) microcavity in time-resolved pump-probe spectroscopy at T=5 K. The sample consists of a 25 nm GaAs single QW in the center of a wedged /spl lambda/-cavity with AlAs-AlGaAs Bragg reflectors.

/pdf/biexcitons-or-bipolaritons-in-a-semiconductor-microcavity-1sbtskpje2.pdf

Biexcitons or bipolaritons in a semiconductor microcavity

Stimulated photoluminescence of the lower polariton in CdTe microcavities is studied at low temperature, using nonresonant excitation. The stimulation threshold is found to be independent of the number of quantum wells in the microcavities, which rules out the stimulation model based on population inversion of either localized excitons or electron-hole plasma. On the other hand, the bosonic final state stimulation process, or boser effect, is clearly evidenced by tuning the lower polariton to one LO phonon below the exciton reservoir. For detunings closer to zero, the stimulation is dominated by another physical mechanism, that could be the exciton-exciton scattering into the upper and lower polariton states.

Evidence of Polariton Stimulation in Semiconductor Microcavities

Polarization-dependent transient pump-probe spectroscopy reveals important effects of biexcitonic interactions on coupled optical excitations in semiconductor microcavities. We show that exciton-to-biexciton transitions can result in a significant increase in normal mode splitting of cavity-polaritons, in sharp contrast to effects of nonlinear optical interactions such as band filling that reduce the splitting. A phenomenological model based on Maxwell-Bloch equations is developed to elucidate how biexcitonic effects contribute to cavity-polaritons. {copyright} {ital 1998} {ital The American Physical Society}

Biexcitonic effects in the nonperturbative regime of semiconductor microcavities

We have demonstrated laser emission at densities below the saturation exciton density in a semiconductor microcavity by tuning the cavity resonance to the low-energy side of the inhomogeneously broadened exciton distribution. Laser emission in this regime arises from population inversion of localized excitons at the low-energy tail of the inhomogeneous distribution. Distinct spectral line shapes of laser emission and especially a large and abrupt change in the lasing threshold are observed when the composite system undergoes a transition from the nonperturbative to the perturbative regimes. The abrupt threshold change is attributed to ionization of excitons occurring in the transition region.

Laser emission from semiconductor microcavities: Transition from nonperturbative to perturbative regimes

We present an experimental study on the role of cavity polaritons in laser emissions from a GaAs quantum-well microcavity. We show that cavity polaritons play no role in the laser emission process when the cavity is nearly resonant with the excitons. The laser emissions emerge from the bare cavity mode instead of from a cavity-polariton branch and the threshold density is much higher than the saturation density at which cavity polaritons vanish. We also show that the presence of emission doublets near the lasing threshold, which was previously taken as an evidence for laser emission from cavity polaritons, is primarily the result of spatial and/or temporal variations of exciton densities within the excitation volume.

Laser emission from semiconductor microcavities: The role of cavity polaritons

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Biexcitonic effects in the nonperturbative regime of semiconductor microcavities

Laser emission from semiconductor microcavities: Transition from nonperturbative to perturbative regimes

Laser emission from semiconductor microcavities: The role of cavity polaritons