Potential Sensing Application of Oxygen Gas with Charge Plasma Based Negative Capacitance Tunnel FET

The growth of internet traffic over the past decade has been constant. The projections are that this growth will continue. Using a smart wireless device, we communicate, entertain, socialize and manage, for example, electrical appliances in the home. The transmission of all this data involves an enormous increase in internet traffic. The question is which medium can solve the problem of large amounts of data and long-distance data transmission. The optical fiber as a medium and All Optical Networks have the highest transmission capacity. Optical networks are the solution to the problem of the amount and distance of data transmission. Within All Optical Networks, data are transmitted over distances of several thousand kilometers from source to destination in the optical domain. All signal transmission and switching are performed in the light optical domain. All Optical Networks at the optical level are vulnerable at the physical level of the network in terms of security. This paper addresses the issue of All Optical Network security at the physical level, with types of attacks and types of protection against tapping and passive data analysis at the physical level of Optical Networks.

Optical Network Security Attacks by Tapping and Encrypting Optical Signals

In this work, the performance of negative capacitance field effect transistor is closely investigated with different source material to improvise the transfer characteristics and sub-threshold swing. Tunnel Field Effect Transistor (TFET) being a strong competitor of conventional MOSFET for low power applications has its abilities to pull down Subthreshold Swing (SS) below fundamental limit but it has its own limitations of lower ION current and existence of ambipolar region for lower VGS voltage range. This ambipolar behavior is strongly seen in case of silicon source NCTFET but when source material is replaced with Germanium, a heterojunction is formed at source channel junction, and because of that, improvised result is obtained in terms of steeper subthreshold slope and ION/IOFF ratio. This work compares the transfer characteristics obtained in case of Si-Source and Ge-Source Negative Capacitance Tunnel Field Effect Transistor (NCTFET). The results obtained indicates that heterojunction NCTFET gives a subthreshold swing of 56.6 mV dec−1 and enhances ION/IOFF ratio to 0.24 × 108 in magnitude.

Effect of shifted gate stack engineering over negative capacitance tunnel field effect transistor (NCTFET)

In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson’s equation at the drift–drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.

Compact Modeling of Impact Ionization in High-Voltage Devices

In this work, parameter extraction methodology for the BSIM industry standard high-voltage (HV) device compact model is presented. An extraction procedure covers entire range of operation, including weak inversion to strong inversion region, low and high drain biases, and multiple body biases with temperature effects. The extraction procedure is validated with experimental and numerical simulation data for several configurations of HV devices, including geometric variations. 

Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model

This brief presents a compact model to capture the major difference between high-voltage (HV) and low-voltage MOSFETs, i.e., the carrier velocity saturation effect in the drift region of HV MOSFETs. We discuss the numerical and behavioral issues that can arise in SPICE simulations with the existing current-dependent formulation in Berkeley-Short-Channel-IGFET model (BSIM) for HV transistors. We then demonstrate how a voltage-dependent formulation can mitigate them without losing simplicity and accuracy. We also validate the proposed model against experimental data of HV transistors.

Robust Compact Model of High-Voltage MOSFET’s Drift Region

In this work, we analyze the impact of random dopant fluctuations (RDFs) on the mismatch behavior of the negative capacitance field-effect transistor (NCFET). We observe that the drain current mismatch decreases in the NCFET compared to conventional MOSFET, and it further decreases with an increase in the thickness of the ferroelectric layer (<inline-formula> <tex-math notation="LaTeX">${t}_{\text {fe}}$ </tex-math></inline-formula>). Metal–ferroelectric–metal–insulator–semiconductor (MFMIS)-type NCFET shows 24% and 22% improvement in mismatch power in comparison to baseline FET at <inline-formula> <tex-math notation="LaTeX">$\vert {V}_{\text {GS}}\vert = {0.2}$ </tex-math></inline-formula> and 1 V, respectively. We show that the mismatch in NCFET is directly proportional to channel doping concentration, similar to baseline MOSFET. For the first time, we demonstrate that mismatch power varies nonmonotonically with the variation in the Landau coefficient <inline-formula> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula>, and the other Landau coefficient <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> has an impact on mismatch at higher <inline-formula> <tex-math notation="LaTeX">${t}_{\text {fe}}$ </tex-math></inline-formula> only. We also present a compact model, under the industry standard Berkeley Short-channel IGFET Model for Bulk MOSFET (BSIM-BULK) MOS model’s framework, which can accurately capture drain current mismatch from subthreshold to strong inversion region for NCFET. The model is extensively validated with the experimentally calibrated technology computer-aided design (TCAD) simulations across different biases and temperatures.

Analysis and Modeling of Current Mismatch in Negative Capacitance Field-Effect Transistor

Nowadays, Optical Code Division Multiple Access (OCDMA) is useful as the most popular technique in multiple access key systems In communication networks, tradeoff between the execution of framework and also, framework security issues has not been discussed in many researches In above two cases security is a main issue in any communication channel, the security method employed may have implications on system performance Optical code-division multiple-access (optical CDMA) technology is a multiplexing technique revised from the successful implementation in various communication networks OCDMA is a superior arrangement for many applications because it gives physical layer security while providing significantly wide bandwidth Optical CDMA is becoming a very attractive option in all optical communication as different users can get to the system non-concurrently at the same time with the abnormal state of security when contrasted with other multiplexing strategies In the proposed work we have implemented the 8-code keying method and compared the outcomes with the previously implemented 4-code keying

Security performance and enhancement of physical layer in optical-CDMA with multicode keying encryption

This paper briefly discusses all the recent enhancements made in the BSIM-BULK MOSFET model. It is a charge-based industry-standard model developed by the BSIM group, an advanced version of BSIM4 model (threshold voltage-based). Initially, BSIM-BULK was developed for low-voltage devices and to enhance its capability for high voltage operations, a drift resistance-based model is also included as one of the important enhancements in its recent version. Moreover, the new model for bulk charge effect in the latest version improves the fitting flexibility of current and capacitance models. Several other noticeable enhancements are body bias and gate bias dependence addition to the high voltage model, improved flicker noise model of MOSFET and EDGEFET, adding flicker noise model due to external S/D resistances, and drain-body diode junction current splitting in HVMOS. All the enhancements have been validated with the experimental data and also passed the Gummel and AC symmetry tests. The latest model has better accuracy, convergence, and performance compared to previous versions of BSIM-BULK model.

Recent Enhancements in the Standard BSIM-BULK MOSFET Model



The nanoparticle is one of the most intensively studied areas in science ranging from engineering to medical fields and has been a center of attraction that is explored to find new and promising dimensions for its use. These nanoparticles have obtained eminence because of their potential efficacy, shape, and size. In the field of nanoscience, the use of natural resources is an emerging topic of interest that has been taken into consideration due to the presence of a reservoir of a priceless wellspring of novel and new chemical entities that have a therapeutic effect. The system has found its space in the treatment of many diseases, including Diabetes, Neurological disorders, Cardiovascular Disorders, and even cancer. At present, cancer is one of the most common causes of death all over the world. Various drugs are used to treat numerous types of cancers, but at the same time, they are found to be harmful to the patient and produce several side effects. To meet the gap, herbal nanoparticles have been studied and are found to be non-hazardous and environmentally friendly. Herbal nanoparticles are synthesized to target various biological pathways that induce cancer and pieces of evidence have shown comparable efficacy like other drugs that have been used conventionally for cancer treatment. The review highlights the mechanism of action and prospects of the nanotechnological approach using phytochemicals for the treatment of cancer and will help to bridge the gap between herbal nanotechnology and current knowledge related to it.


Herbal Nanoparticles: A New Perspective of Drug Delivery System- A Review

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