Si Nano-Photodiode with a Surface Plasmon Antenna

The hydrogen oxidation reaction (HOR) in alkaline medium has been investigated together with the recent development of alkaline membrane fuel cells, also called anion exchange membrane fuel cells (AEMFCs).[1,2] Under alkaline conditions, the HOR activity of the pure platinum-group metal (PGM) catalysts (Pt, Ir and Pd) is significantly reduced by at least two orders of magnitude compared to the same PGMs under acidic conditions.[3–6] The development of alkaline exchange membrane fuel cell (AEMFC) is limited by the sluggish reaction at the anode. Even precious group metals (PGMs) are not effective hydrogen oxidation reaction (HOR) electrocatalysts in alkaline medium. In this manuscript, the original synthesis of effective HOR electrocatalysts for AEMFC is reported. Here, the limitations of using metalorganic precursors are described and their replacement with organometallic precursors is proposed. It is shown that completely different nanostructures can be synthesized by the organometallic route, resulting in the formation of NiPd nano-alloy or Ni@Pd core–shell nanoparticles, instead of Pd@ Ni. The presence of both Pd and Ni on the catalyst surface has a drastic effect on its HOR activity, due to a bifunctional electrocatalytic mechanism with hydrogen binding on Pd and OH binding on Ni. The highest activity is measured for NiPd nano-alloy, whose specific activity reaches − 104 mA mgPd 1

Bifunctional Electrocatalysis on Pd-Ni Core–Shell Nanoparticles for Hydrogen Oxidation Reaction in Alkaline Medium

Recently, van der Waals heterojunction based on 2D materials emerges as a promising technology for optoelectronic integrated circuits. Here, a self‐driven optoelectronic logic device is demonstrated based on vertically stacked van der Waals heterojunction of black phosphorus and molybdenum telluride. Through the electrostatic doping by gating, the heterojunction is dynamically tuned to isotype (p‐P and n‐N) and anisotype (p‐N) while the built‐in electric field in the heterojunction is greatly changed. Consequently, the photovoltaic effect in the heterojunction is switchable by the gate voltage, enabling a novel self‐driven optoelectronic logic element without the need of external biasing. This optoelectronic logic device shows promising characteristics of output dark current <1 pA, on/off current ratio >105, switching time <10 µs, broadband operation in the spectral range from 400 to 1600 nm, and linearly adjustable output current. The results may open up unprecedented opportunities to employ van der Waals heterojunctions for exploring logic optoelectronics with high performance and low power consumption.

Gate‐Switchable Photovoltaic Effect in BP/MoTe2 van der Waals Heterojunctions for Self‐Driven Logic Optoelectronics

The simulation of silicon-based light-emitting and photodetectors nanodevices using computer algebra became a challenge. These devices couple the hyperbolic equations of electromagnetic radiation, the parabolic equations of heat conduction, the elliptic equations describing electric potential, and the eigenvalue equations of quantum mechanics—with the nonlinear drift–diffusion equations of the semiconductor physics. These complex equations must be solved by using generally mixed Dirichlet–Neumann boundary conditions in three-dimensional geometries. Comsol Multiphysics modeling software is employed integrated with MATLAB–SIMULINK and Zemax. The physical equations are discretized on a mesh using the Galerkin finite element method (FEM) and to a lesser extent the method of finite volumes. The equations can be implemented in a variety of forms such as directly as a partial differential equation, or as a variational integral, the so-called weak form. Boundary conditions may also be imposed directly or using variational constraint and reaction forces. Both choices have implication for convergence and physicality of the solution. The mesh is assembled from triangular or quadrilateral elements in two-dimensions, and hexahedral or prismatic elements in three dimensions, using a variety of algorithms. Solution is achieved using direct or iterative linear solvers and nonlinear solvers. The former are based on conjugate gradients, the latter generally on Newton–Raphson iterations. The general framework of FEM discretization, meshing and solver algorithms will be presented together with techniques for dealing with challenges such as multiple time scales, shocks and nonconvergence; these include load ramping, segregated iterations, and adaptive meshing.

Computer Algebra Challenges in Nanotechnology: Accurate Modeling of Nanoscale Electro-optic Devices Using Finite Elements Method

The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC) embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by...

/pdf/structure-and-spatial-distribution-of-ge-nanocrystals-o7vd0ywprw.pdf

Structure and Spatial Distribution of Ge Nanocrystals Subjected to Fast Neutron Irradiation

The constantly growing use of real-time computing generates constant urge for much faster processors than those which are currently available in the market. Correspondingly, there is an accelerated development of new optics communication related applications and components. The effort to combine those two trends leads to the generation of new optoelectronic nanodevices. Such hybrid devices may allow high operation speed, reduced cross talk and other noises, low operation power, and obviate the need for the existing electro-optical convertors. In this letter, we present the design, simulation, fabrication, and characterization of an optoelectronic device based on silicon which is capable of speeding up the processing capabilities. This novel device is called silicon-on-insulator photo-activated modulator. The nature of the data flow in this device is electronic, while the modulation control command is optic. Since the external voltage in the final configuration design of the device is constant and no $RC$ (electrical average response time) related delay is generated, faster operation rates are anticipated. This novel device can serve as a building block toward the development of optical data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.

Nanoscale Silicon-on-Insulator Photo-Activated Modulator Building Block for Optical Communication

In this paper we present the fabrication process and the experimental proof of principle of a vertical Silicon On Insulator Photo Activated Modulator (vertical SOI-PAM). In this device the information is electronic while the modulation command is photonic. Since photon illumination generates free charges and current, the information channel should be isolated by combination of metal and oxide layers in order to avoid cross-talk. However photo-generated charges are capable of closing the channel by inducing changes in the space charge layers on both sides of the oxide. The device is a vertical structure of n-type silicon resistor on oxide insulator above a p-type silicon substrate. The photonic modulation command is applied by top illumination of a specially etched V-groove in the p-type substrate in the vicinity of the resistor.

Fabrication of vertically positioned silicon on insulator photo-activated modulator

Silicon on insulator photo-activated modulator

A type of silicon photodiode has been designed and simulated to probe the optical near field and detect evanescent waves. These waves convey subwavelength resolution. This photodiode consists of a truncated conical shaped, silicon Schottky diode having a subwavelength aperture of 150 nm. Electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.

/pdf/electro-optical-study-of-nanoscale-al-si-truncated-conical-4uekco3gfg.pdf

Electro-optical study of nanoscale Al-Si-truncated conical photodetector with subwavelength aperture

Abstract. As part of the efforts to enhance the near-field scanning optical microscopy and the detection of evanescent waves, a silicon Schottky diode, shaped as a truncated trapezoid photodetector and sharing a subwavelength pin-hole aperture, has been designed and simulated. Using finite elements method and two-dimensional advanced simulations, the detector has been horizontally shifted across a vertically oriented Gaussian beam, which is projected on top of the device. Both electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.

/pdf/laser-beam-scanning-using-near-field-scanning-optical-5aska5s3ys.pdf

Laser beam scanning using near-field scanning optical microscopy nanoscale silicon-based photodetector

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