Atta U. Khan
Rutgers University
40 Papers
72 Citations
Atta U. Khan is an academic researcher from Rutgers University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 12, co-authored 34 publications. Previous affiliations of Atta U. Khan include University of Vienna & University of Bordeaux.
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Papers
Nano-micro-porous skutterudites with 100% enhancement in ZT for high performance thermoelectricity
Atta U. Khan,Kazuaki Kobayashi,Dai-Ming Tang,Yusuke Yamauchi,Kotone Hasegawa,Masanori Mitome,Yanming Xue,Baozhen Jiang,Koichi Tsuchiya,Koichi Tsuchiya,Dmitri Golberg,Dmitri Golberg,Yoshio Bando,Takao Mori,Takao Mori +14 more
TL;DR: In this article, the authors report a porous architecture containing irregularly shaped and randomly oriented pores, scattering a wide spectrum of phonons without employing the conventional rattling phenomenon, which yields >100% enhancement in ZT, as compared to the pristine sample.
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Sb Doping of Metallic CuCr2S4 as a Route to Highly Improved Thermoelectric Properties
Atta U. Khan,Rabih Al Rahal Al Orabi,Rabih Al Rahal Al Orabi,Amir Pakdel,Jean-Baptiste Vaney,Bruno Fontaine,Régis Gautier,Jean-François Halet,Seiji Mitani,Seiji Mitani,Takao Mori,Takao Mori +11 more
TL;DR: In this paper, the thermoelectric properties of CuCr2-xSbxS4 (0.22 ≤ x ≤ 0.5) were reported for the first time.
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Applications of Various Types of Nanomaterials for the Treatment of Neurological Disorders
Abdul Waris,Asmat Ali,Atta U. Khan,Muhammad Asim,Doaa Zamel,Kinza Fatima,Abdul Raziq,Muhammad Ajmal Khan,Nazia Akbar,Abdul Baset,Mohammed A.S. Abourehab +10 more
TL;DR: Nanomaterials have unique characteristics, including sensitivity, selectivity, and the ability to cross the BBB when used in nano-sized particles, and are widely used for imaging studies and treatment of NDs.
Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism
Atta U. Khan,Anthony Etzold,Xiaokun Yang,Vladislav Domnich,Kelvin Y. Xie,Chawon Hwang,Kristopher D. Behler,Mingwei Chen,Qi An,Jerry C. LaSalvia,Kevin J. Hemker,William A. Goddard,Richard A. Haber +12 more
TL;DR: In this paper, the location of Si atoms in the boron carbide lattice is investigated and possible supercell structures are suggested along with the most plausible structure for Si-doped borone carbide material.
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Nanostructure and doping stimulated phase separation in high-ZT Mg2Si0.55Sn0.4Ge0.05 compounds
George S. Polymeris,George S. Polymeris,N. Vlachos,Atta U. Khan,Euripides Hatzikraniotis,Ch. B. Lioutas,Andreas Delimitis,E. Pavlidou,Konstantinos M. Paraskevopoulos,Th. Kyratsi +9 more
TL;DR: In this article, the structural properties of Mg2Si0.55−ySn0.40Ge0.05(Bi,Sb)y-type solid solutions of the formula Mg 2Si0,Si,Sn,Ge 0.0125 have been studied across all relevant length-scales for MgSi0 type solid solutions, and the results of the present study strongly suggest that, besides the main matrix and the MgO, there are three groups of secondary phases extending with uniform composition from nano-scale to macro-scale.
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