Athanasios N. Chantis
Los Alamos National Laboratory
42 Papers
120 Citations
Athanasios N. Chantis is an academic researcher from Los Alamos National Laboratory. The author has contributed to research in topics: Quantum tunnelling & Spin polarization. The author has an hindex of 20, co-authored 41 publications. Previous affiliations of Athanasios N. Chantis include Arizona State University & South Dakota School of Mines and Technology.
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Papers
Electronic structure of rare-earth nitrides using the LSDA + U approach: Importance of allowing 4 f orbitals to break the cubic crystal symmetry
TL;DR: In this paper, the LDA+U method was applied to the rare-earth (RE) nitrides in the rocksalt structure using density functional theory calculations within the local spin density approximation with Hubbard-$U$ corrections.
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Tunneling anisotropic magnetoresistance driven by resonant surface states: first-principles calculations on an Fe(001) surface.
TL;DR: In this paper, the spin-flip scattering at the interface is controlled not only by the strength of spin-orbit coupling, but also depends strongly on the intrinsic width of the resonant surface states.
Quasiparticle self-consistent GW method applied to localized 4f electron systems
TL;DR: In this article, the quasiparticle self-consistent GW$ (\mathrm{QS}GW) method was applied to the rare-earth metals Gd and Er and the rare earth monopnictides GdN, EuN, YbN, GdAs, and ErAs.
Discovery of a novel linear-in-k spin splitting for holes in the 2D GaAs/AlAs system.
TL;DR: A large linear scaling of hole states in 2D emerges from coupling of hole bands that would be unsuspected by the standard model that judges coupling by energy proximity, implying a different understanding of hole physics in low dimensions.
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•Journal Article
Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations
Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,M. van Schilfgaarde,R. C. Albers +5 more
TL;DR: In this paper, the spin-dependent current in a Fe/GaAs/Cu tunnel junction was calculated as a function of the applied bias voltage, and it was shown that the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance can be explained.