/pdf/physics-of-amorphous-materials-by-s-r-elliott-eyx6ow4nqk.pdf

Physics of amorphous materials by S. R. Elliott

Effects of surface oxidation on the crystallization characteristics of Ge-rich Ge-Sb-Te alloys thin films

Ge-rich GeSbTe (GST) alloys are attracting Phase Change Materials for future memories as their higher crystallization temperature offers an extended range of applications. We have studied the electrical characteristics of PCM cells using such alloys as active layers. We show by impedance spectroscopy that the cells in the RESET (amorphous) state are not only resistive but also exhibit a capacitive component. Although trap-assisted conduction models are apparently able to describe the I(V) and I(T) characteristics of the devices in this state, their physical background is thus questionable. Alternatively, we show that granular models, describing electrical transport through conductive grains separated by insulating interfaces, are also able to simulate these characteristics, while fed by physically sound fitting parameters. Moreover, we show that the SET (crystalline) state is not simply ohmic but that its characteristics, as conductive as a metal but reacting as an insulator to temperature, resemble to those found in a semiconductor doped with a very low ionization energy defect. Finally, all these characteristics can be understood by considering that the electrical properties of cells made of Ge-rich GST layers are not those characteristic of some defective and homogeneous material but instead result from strong chemical heterogeneities found both in the amorphous and crystalline states of these Ge-rich alloys.

/pdf/on-the-charge-transport-mechanisms-in-ge-rich-gesbte-alloys-32c2mxzkrk.pdf

On the charge transport mechanisms in Ge-rich GeSbTe alloys

Les memoires a base de semi-conducteur sont indispensables pour les dispositifs electroniques actuels. La demande croissante pour des dispositifs memoires fortement miniaturisees a entraine le developpement de memoires non volatiles fiables qui sont utilisees dans des systemes informatiques pour le stockage de donnees et qui sont capables d'atteindre des debits de donnees eleves, avec des niveaux de dissipation d'energie equivalents voire moindres que ceux des technologies memoires actuelles.Parmi les technologies de memoires non-volatiles emergentes, les memoires a changement de phase (PCM) sont le candidat le plus prometteur pour remplacer la technologie de memoire Flash conventionnelle. Les PCM offrent une grande variete de fonctions, comme une lecture et une ecriture rapide, un excellent potentiel de miniaturisation, une compatibilite CMOS et des performances elevees de retention de donnees a haute temperature et d'endurance, et peuvent donc ouvrir la voie a des applications non seulement pour les dispositifs memoires, mais egalement pour les systemes informatiques a hautes performances. Cependant, certains problemes de fiabilite doivent encore etre resolus pour que les PCM se positionnent comme un remplacement concurrentiel de la memoire Flash.Ce travail se concentre sur l'etude de memoires a changement de phase integrees afin d'optimiser leurs performances et de proposer des solutions pour surmonter les principaux points critiques de la technologie, ciblant des applications a hautes temperatures. Afin d'ameliorer la fiabilite de la technologie, la stœchiometrie du materiau a changement de phase a ete concue de facon appropriee et des dopants ont ete ajoutes, optimisant ainsi la stabilite thermique. Une diminution de la vitesse de programmation est egalement rapportee, ainsi qu'un drift residuel de la resistance de l'etat de faiblement resistif vers des valeurs de resistance plus elevees au cours du temps.Une nouvelle technique de programmation est introduite, permettant d'ameliorer la vitesse de programmation des dispositifs et, dans le meme temps, de reduire avec succes le phenomene de drift en resistance. Par ailleurs, un algorithme de programmation des PCM multi-bits est presente. Un generateur d'impulsions fournissant des impulsions avec la tension souhaitee en sortie a ete concu et teste experimentalement, repondant aux demandes de programmation d'une grande variete de materiaux innovants et en permettant la programmation precise et l’optimisation des performances des PCM.

/pdf/caracterisation-et-conception-d-architectures-basees-sur-des-3sesekx5md.pdf

Caractérisation et conception d' architectures basées sur des mémoires à changement de phase

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Caractérisation et conception d' architectures basées sur des mémoires à changement de phase