Effects of intermediate zinc pulses on properties of TiN and NbN films deposited by atomic layer epitaxy

A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR2)4, as the primary precursor, in combination with an activated species which attacks the alkyl-nitrogen bonds of the primary precursor, and which will convert the displaced alkyl groups into a volatile compound. Any noble gas, as well as nitrogen or hydrogen, or a mixture of two or more of the foregoing may be used as a carrier for the precursor. The activated species, which may include a halogen, NH3, or hydrogen radicals, or a combination thereof, are generated in the absence of the primary precursor, at a location remote from the deposition chamber. The wafer is heated to a temperature within a range of 200°-600° C. The primary precursor molecules and the activated species are mixed, preferably, just prior to being ducted into the deposition chamber. Relatively uncontaminated titanium nitride deposits on the heated wafer surface.

Low-pressure chemical vapor deposition process for depositing high-density highly-conformal, titanium nitride films of low bulk resistivity

Thin films of Ti-Si-N, reactively spattered from a Ti/sub 5/Si/sub 3/ target, are assessed as diffusion barriers between silicon substrates and copper overlayers. By tests on shallow-junction diodes, a 100 nm Ti/sub 34/Si/sub 23/N/sub 43/ barrier is able to prevent copper from reaching the silicon substrate during a 850/spl deg/C/30 min anneal in vacuum. A 10 nm film prevents diffusion up to 650/spl deg/C/30 min. By high-resolution transmission electron microscopy, Ti/sub 34/Si/sub 23/N/sub 43/ predominantly consists of nanophase TiN grains roughly 2 nm in size. >

Ti-Si-N diffusion barriers between silicon and copper

The concentrations of the neutral active species in the afterglow of a nitrogen and helium atmospheric-pressure plasma have been determined by optical emission and absorption spectroscopy and by numerical modeling. For operation with 10 Torr N2 and 750 Torr He, at 15.5 W/cm3 rf power, 30.4 L/min flow rate, and a neutral temperature of 50°C, the plasma produced 4.8×1015 cm−3 of ground state nitrogen atoms, N(4S), 2.1×1013 cm−3 of N2(A3Σu), 1.2×1012 cm−3 of N2(B3Πg), and 3.2×109 cm−3 of N2(C3Πu). The concentration of nitrogen atoms and metastable state nitrogen molecules, N2(A), increased gradually with the rf power and the nitrogen partial pressure. Both the model and experiments indicate that ground-state nitrogen atoms are the dominant active species in the afterglow beyond 2.0 ms.

/pdf/characterization-of-the-active-species-in-the-afterglow-of-a-1cjq8m124k.pdf

Characterization of the Active Species in the Afterglow of a Nitrogen and Helium Atmospheric-Pressure Plasma

Reactions of niobium and tantalum pentachlorides with tert-butylamine (≥6 equiv) in benzene afford the dimeric imido complexes [NbCl2(NtBu)(NHtBu)(NH2tBu)]2 (90%) and [TaCl2(NtBu)(NHtBu)(NH2tBu)]2 (79%). The niobium complex exists as two isomers in solution, while the tantalum complex is composed of three major isomers and at least two minor isomers. Analogous treatments with isopropylamine (≥7 equiv) give the monomeric complexes NbCl2(NiPr)(NHiPr)(NH2iPr)2 (84%) and TaCl2(NiPr)(NHiPr)(NH2iPr)2 (84%). The monomeric complexes are unaffected by treatment with excess isopropylamine, while the dimeric complexes are cleaved to the monomers MCl2(NtBu)(NHtBu)(NH2tBu)2 upon addition of excess tert-butylamine in chloroform solution. Treatment of niobium and tantalum pentachlorides with 2,6-diisopropylaniline affords insoluble precipitates of [NH3(2,6-(CH(CH3)2)2C6H3)]2[NbCl5(N(2,6-(CH(CH3)2)2C6H3))] (100%) and [NH3(2,6-(CH(CH3)2)2C6H3)]2[TaCl5(N(2,6-(CH(CH3)2)2C6H3))] (100%), which react with 4-tert-butylpyridine ...

Imido Complexes Derived from the Reactions of Niobium and Tantalum Pentachlorides with Primary Amines: Relevance to the Chemical Vapor Deposition of Metal Nitride Films

This paper reviews recent studies of the low-temperature chemical vapor deposition of titanium nitride thin films suitable for ULSI applications. In addition to the comprehensive studies available for films grown thermally from TiCl4 and NH3, films deposited from organometallic precursors are discussed, as well as those derived from plasma-enhanced techniques. Two applications of such films for ULSI are as a diffusion barrier between different conductors, and as a nucleation layer for CVD tungsten. Properties of LPCVD TiN for these applications, are covered including film conformality, effectiveness as a diffusion barrier, contact resistance, nucleation of tungsten, and the influence of any residual chlorine.

Growth and Properties of Low Pressure Chemical-Vapor-Deposited TiN for Ultra Large Scale integration

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Growth and Properties of Low Pressure Chemical-Vapor-Deposited TiN for Ultra Large Scale integration