The implementation of memristive synapses in neuromorphic computing is hindered by the limited reproducibility and high energy consumption of the switching behaviour of the devices. Typical filament-type memristors suffer, in particular, from temporal and spatial variation in the set voltage and resistance states due to stochastic filament formation. Here, we report memristors based on two-dimensional pentagonal palladium diselenide (PdSe2) that can exhibit anomalous resistive switching behaviour with two interchangeable reset modes: total reset and quasi-reset. Heterophase grain boundaries are formed in the PdSe2 via local phase transitions induced by electron-beam irradiation, which leads to residual filaments along the grain boundaries that can guide the formation of conductive filaments. When operated in the quasi-reset mode, the memristors show a sixfold improvement in switching variation compared with devices operating in the total-reset mode, as well as a low set voltage (0.6 V), long retention times and programmable multilevel resistance states. We also show that the devices can emulate synaptic plasticity and that multipattern memorization can be implemented using a crossbar array architecture. Heterophase grain boundaries in memristors based on pentagonal palladium diselenide can guide the formation of conductive filaments during resistive switching, leading to devices with uniform switching properties, low set voltages, long retention times and programmable multilevel resistance states.

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

In this work, the MoS2, CuO and n-MoS2/p-CuO heterojunction nanoworms thin films were fabricated on ITO coated glass substrate by DC magnetron sputtering method. The ammonia (NH3) gas sensing properties of MoS2/CuO nanoworms bilayer sensor towards low detection range (5–500 ppm) have been discussed in detail. The as prepared nanoworms based gas sensor reveals the fast response/recovery time (17 s/26 s), high sensing response (S.R∼47%) with remarkable reproducibility (15 cycles) during exposure to 100 ppm ammonia in the dry synthetic air at room temperature. Furthermore, the working principle documented to the outstanding performance of the proposed sensor towards ammonia gas was also studied in details.

Excellent room temperature ammonia gas sensing properties of n-MoS2/p-CuO heterojunction nanoworms

https://www.tandfonline.com/doi/pdf/10.1080/14686996.2020.1730236

Decade of 2D-materials-based RRAM devices: a review.

https://iopscience.iop.org/article/10.1088/1361-6463/ab2e9e/pdf

Advances in resistive switching based memory devices

The increasing use of hydrogen (H2) as a clean energy carrier utilized in the next-generation fuels demand parallel development of low power hydrogen sensors (operated at room temperature) for safety purposes. In this work, we report a controlled single-step, large-area growth of vertically aligned edge-oriented MoS2 hybrid nanostructured thin film decorated with Pd nanoparticles (Pd/MoS2) on quartz and Si substrates using DC magnetron sputtering technique. The structural, morphological, and chemical characterizations were performed using XRD, Raman, FESEM, TEM, EDX, and XPS techniques, which confirms the formation of Pd/MoS2 hybrid thin film. Hydrogen gas sensing characteristics of Pd/MoS2 hybrid thin film sensor under low detection range (10−500 ppm) and proposed sensing mechanism are discussed in detail. To gain further insights into the gas sensing mechanism, we have studied the junction band alignment at the Pd/MoS2 interface using ultraviolet photoelectron spectroscopy and ellipsometry. The results demonstrate that the fabricated Pd/MoS2 hybrid thin film sensor exhibits highly enhanced H2 sensing properties (decent response ∼33.7 %, fast response/recovery time ∼16 s/38 s, and higher selectivity) compared to pristine MoS2 thin film sensor (poor response ∼1.2 % and slow response/recovery time ∼29 s/158 s, and poor selectivity) towards 500 ppm H2 at room temperature (30 °C). Thus, this study offers the development of low power H2 sensors with enhanced sensor characteristics, which could be utilized in IoT (Internet of Things) network, with an advantage of facile and scalable fabrication techniques.

Fabrication of highly responsive room temperature H2 sensor based on vertically aligned edge-oriented MoS2 nanostructured thin film functionalized by Pd nanoparticles

The present study explores the systematic investigation of resistive switching response of magnetron sputtered MoS2 thin films sandwiched between a Ni-Mn-In ferromagnetic shape memory alloy (bottom) and copper (top) electrodes. The Cu/MoS2/Ni-Mn-In device exhibits stable and reproducible bipolar resistive switching behavior. The current-voltage (I-V) analysis suggests that the device shows ohmic conduction behavior in the low resistance state (LRS) while space charge limited conduction is the dominating conduction mechanism in the high resistance state (HRS). The compliance current vs reset current measurements were also performed which reveals that the power consumption of the device can be suppressed by decreasing the compliance current. To explain the resistive switching behavior in the Cu/MoS2/Ni-Mn-In device, a conceptual model based on copper ion migration, is proposed and well explained. The resistive switching parameters such as the set voltage, LRS and HRS resistances, are also investigated in a temperature range overlapping with the martensite phase transformation temperatures of the bottom ferromagnetic shape memory alloy (Ni-Mn-In) electrode. It provides temperature as an extra degree of freedom to modulate the resistive switching characteristics of the fabricated device. The Cu/MoS2/Ni-Mn-In device shows a decent endurance of 500 and a long retention of 103. These results demonstrate the feasibility of the MoS2 based devices for futuristic tunable nonvolatile resistive random access memory applications.

Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy

In this work, the tunable resistive switching (RS) functionality of a Cu/MoS2/AlN/ITO nanostructured device is systematically investigated in dark and white light illumination. The device exhibits bi-state RS behavior in the dark ambient, whereas light illumination induces an extra intermediate resistance state and provides controllable tri-state RS characteristics. A conceptual model is proposed and discussed to elucidate the origin of the switching behavior of two resistance states and multiple resistance states of the device. Under the dark ambient condition, the high resistance state and the low resistance state in the device could be ascribed to the formation/rupture of a Cu metallic filamentary path between the electrodes. However, the formation of an additional ionic filament via trapping/detrapping of electrons in nitride-sulfide-related vacancies along with the Cu metallic filament is responsible for the tri-state switching under the light illumination. Interestingly, the variation of SET voltage with applied light intensity has also been demonstrated. The calculated value of the temperature coefficient and temperature dependency of resistance in various resistance states confirms the existence of the proposed model. The device performed a good undispersed endurance up to 1.5 × 103 cycles and stable retention over 103 s at room temperature. This optical activity dependent functionality of the device provides a possibility to extend resistive switching-based nonvolatile random access memory applications to the optical domain such as imaging sensors, photodetectors, and optoelectronic switches.

Optically triggered multilevel resistive switching characteristics of Cu/MoS2/AlN/ITO bilayer memory structure

The present work explores the white light controlled resistive switching functionality of MoS2 nanorods (NRs) by fabricating a metal-insulator-metal stack configuration. The Cu/MoS2 NRs/Pt/Si device demonstrates the reproducible two-state bipolar resistive switching characteristics under both dark and light environments. In the dark condition, the resistive switching behavior of the NR device could be attributed to the metallic path formation/rupture between top and bottom electrodes. Whereas the applied white light causes the lowering of SET and RESET voltages by inducing conducting path formation/rupture via electron trapping/detrapping in sulfur vacancies across the MoS2 NRs. The formation of a conducting path under dark and light illumination conditions is well explained by proposing a conceptual model and analyzing the resistance vs temperature measurements. It is observed that the white light acts as an external tool to modulate the resistive switching behavior of the fabricated NR device. The correlation between the applied light intensity and the SET voltage is also demonstrated. The NR structure of the MoS2 device provides good endurance of 1500 cycles and a long retention time of 103 s at room temperature under light illumination because of straight conducting path formation through NRs. These results demonstrate that the optically active MoS2 NR based devices have potential for next generation tunable nonvolatile resistive random access memory applications with additional functionality such as photosensors and optoelectronic switches.

White light-modulated bipolar resistive switching characteristics of Cu/MoS2 NRs/Pt MIM structure

Improved power conversion efficiency in n-MoS2/AlN/p-Si (SIS) heterojunction based solar cells

The current study explores the presence of strong magnetoelectric (ME) coupling in a sputtered deposited NiMnIn/aluminum nitride (AlN) heterostructure on an Si substrate. The X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy results confirm the formation of a pure AlN wurtzite phase in the ME heterostructure. The magnetization vs temperature measurement shows the presence of the martensite transformation region of the NiMnIn/AlN heterostructure. The magnetic measurements exhibit the room temperature ferromagnetic nature of the NiMnIn/AlN heterostructure. The NiMnIn/AlN ME heterostructure was found to have a high ME coupling coefficient of ∼99.2 V/cm Oe at Hdc = 300 Oe. The induced ME coupling coefficient shows a linear dependency on Hac up to 8 Oe.

High magnetoelectric coupling in Si-integrated AlN/NiMnIn thin film double layers at room temperature

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