Antoine Jay
University of Toulouse
25 Papers
21 Citations
Antoine Jay is an academic researcher from University of Toulouse. The author has contributed to research in topics: Boron carbide & Boron. The author has an hindex of 7, co-authored 20 publications. Previous affiliations of Antoine Jay include École Polytechnique & Centre national de la recherche scientifique.
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Papers
Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure
Antoine Jay,Melanie Raine,Nicolas Richard,Normand Mousseau,Vincent Goiffon,Anne Hémeryck,Pierre Magnan +6 more
TL;DR: In this paper, a statistical study of displacement cascades induced by silicon Primary Knock-on Atoms (PKA) in bulk silicon is performed by running a large number of molecular dynamics simulations.
Carbon-rich icosahedral boron carbide designed from first principles
TL;DR: In this paper, the carbon-rich boron carbide (B11C)C-C has been designed from first principles within the density functional theory, and the structural modification consists in removing borons atoms from the chains linking icosahedra.
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Radiation-Induced Variable Retention Time in Dynamic Random Access Memories
Vincent Goiffon,Antoine Jay,Philippe Paillet,Teddy Bilba,Theo Deladerriere,Guillaume Beaugendre,Alexandre Le Roch,Arnaud Dion,Cedric Virmontois,Jean-Marc Belloir,Marc Gaillardin +10 more
TL;DR: In this paper, the effect of gamma-ray and neutron radiations on the variable retention time (VRT) phenomenon occurring in dynamic random access memory (DRAM) is studied.
Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties
Antoine Jay,Anne Hémeryck,Nicolas Richard,Layla Martin-Samos,Melanie Raine,Alexandre Le Roch,Normand Mousseau,Vincent Goiffon,Philippe Paillet,Marc Gaillardin,Pierre Magnan +10 more
TL;DR: In this article, a principle study of the defects generated by displacement cascades in silicon is performed, particularly focused on two defect configurations; the divacancy and the tri-interstitial, both identified in previous molecular dynamics and kinetic activation relaxation technique simulations.
Understanding first-order Raman spectra of boron carbides across the homogeneity range
TL;DR: In this paper, the first-order, nonresonant, Raman spectrum of boron carbide has been analyzed using density functional perturbation theory, and a new structure at 19.2% atomic carbon concentration has been proposed, which, within the local density approximation of density functional theory (DFT-LDA), lies very close to the convex hull of Boric acid.
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