Andrew Klump
North Carolina State University
30 Papers
22 Citations
Andrew Klump is an academic researcher from North Carolina State University. The author has contributed to research in topics: Doping & Epitaxy. The author has an hindex of 9, co-authored 25 publications.
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Papers
Thermal conductivity of single-crystalline AlN
Robert Rounds,Biplab Sarkar,Andrew Klump,Carsten Hartmann,Toru Nagashima,Ronny Kirste,Alexander Franke,Matthias Bickermann,Yoshinao Kumagai,Zlatko Sitar,Ramon Collazo +10 more
TL;DR: The thermal conductivity of AlN single crystals grown by physical vapor transport (PVT) and hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω method as discussed by the authors.
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Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
Pramod Reddy,Marc P. Hoffmann,Felix Kaess,Zachary Bryan,Isaac Bryan,Milena Bobea,Andrew Klump,James Tweedie,Ronny Kirste,S. Mita,Michael Gerhold,Ramon Collazo,Zlatko Sitar +12 more
TL;DR: In this paper, a theoretical framework for a general approach to reduce point defect density in materials via control of defect quasi-Fermi level (dQFL) is presented, which is achieved via excess minority carrier generation.
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High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Pramod Reddy,M. Hayden Breckenridge,Qiang Guo,Andrew Klump,Dolar Khachariya,Spyridon Pavlidis,W. J. Mecouch,Seiji Mita,Baxter Moody,James Tweedie,Ronny Kirste,Erhard Kohn,Ramon Collazo,Zlatko Sitar +13 more
TL;DR: In this article, a large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100
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The role of chemical potential in compensation control in Si:AlGaN
Shun Washiyama,Pramod Reddy,Biplab Sarkar,Mathew Hayden Breckenridge,Qiang Guo,Pegah Bagheri,Andrew Klump,Ronny Kirste,James Tweedie,Seiji Mita,Zlatko Sitar,Ramon Collazo +11 more
TL;DR: In this paper, a chemical potential control (CPC) model was proposed to reduce compensation in Si-doped Al-rich AlGaN by impeding the formation of VIII+nSiIII complexes under III-richer conditions, while the impurity compensation by nitrogen site (CN) was reduced by making the growth environment Nricher.
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The influence of point defects on the thermal conductivity of AlN crystals
Robert Rounds,Biplab Sarkar,Dorian Alden,Qiang Guo,Andrew Klump,Carsten Hartmann,Toru Nagashima,Ronny Kirste,Alexander Franke,Matthias Bickermann,Yoshinao Kumagai,Zlatko Sitar,Ramon Collazo +12 more
TL;DR: In this article, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations was analyzed using the 3ω method in the temperature range of 30-325 K.
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