Defects in silicon oxynitride gate dielectric films

Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240). Copyright © 2005 John Wiley & Sons, Ltd.

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

The short channel effects (SCE) are becoming serious problems as MOSFET scales down to the deep sub-micron dimension. For this reason, a silicon tunneling transistor called TFET is investigated. The device and process simulations are carried out to investigate physical principle, optimized fabrication conditions, and future structure of TFET. With the improved technologies, the complementary TFETs are realized on the single silicon wafer. The room temperature gate-controlled tunneling is realized in this silicon device. Due to the low leakage current, TFET can be used in the low power circuits. In addition, TFET is suitable for microwave application because of the short electron transit time through its channel.

https://mediatum.ub.tum.de/doc/601574/file.pdf

Complementary Tunneling-FETs (CTFET) in CMOS Technology

In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation.

Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

It is well known that nitrogen implantation in silicon leads in reduction of the SiO2 thickness in implanted wafers, which makes this a very promising technique for present and future device processing. In this work we investigate the influence of the implantation energy on oxidation kinetics in nitrogen-implanted silicon. Nitrogen was implanted in silicon wafers at low (3 keV), and medium (25, 80, and 150 keV) energies and oxidations were performed at various temperatures (800–900 °C) and times. The experiment shows that the decrease in the oxide thickness is smaller when nitrogen is implanted closer to the silicon surface. We attribute this to nitrogen out-diffusion during the ramping and the initial oxidation steps, which is more effective when nitrogen is placed closer to the surface. Additional experiments varying the ramping time support this explanation. An additional study of the growth of extended defects under the different implantation conditions has been performed. This study enabled the estim...

Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate

Rapid thermal processing (RTP) is of increasing interest in silicon mainstream technology providing reduced thermal budget. In this paper the dopant diffusion behaviour during rapid thermal oxidation (RTO) is investigated, in particular the oxidation enhanced diffusion (OED). For diffusion monitoring, samples were fabricated by means of molecular beam epitaxy (MBE) to create sharp doping profiles with nanometer resolution. After various RTO treatments (dry and wet oxide) resulting in an ellipsometric measured oxide thickness of 5 nm, the distribution of dopants was analysed by secondary ion mass spectroscopy (SIMS) and compared with standard thermal processes. Metal-oxide-semiconductor structures (MOS-structures) were fabricated for electrical characterisation. It turns out that for a low thermal budget and minimised OED only wet RTO is feasible.

Dopant diffusion during rapid thermal oxidation

Nitrogen implantations for rapid thermal oxinitride layers

The requirement for best gate oxide integrity and oxide preparation at lowest possible thermal budget is in many cases not compatible. It has been reported that Si/SiO/sub 2/ interfacial roughness and interface width decreases with increasing growth temperature between 800/spl deg/C and 1200/spl deg/C for rapid thermal oxidation (RTO). Decreased interface width and roughness result in better device performance. Other studies have shown that high energy photons may cause a higher density of localized traps in oxide leading to an enhancement in soft breakdown occurence of ultra thin gate oxides. The aim of this study is the improvement of oxide quality by variation of process temperature and dilution of the reactive oxygen. Moreover these variations are done with a hot-shielding system.

Advantages of the hot-shielding technology with regard to ultra thin RTO quality

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Dopant diffusion during rapid thermal oxidation

Nitrogen implantations for rapid thermal oxinitride layers

Advantages of the hot-shielding technology with regard to ultra thin RTO quality